FS0102MB

FS01...A/B SENSITIVE GATE SCR TO92 (Plastic) RD26 (Plastic) On-State Current 0.8 Amp Off-State Voltage 200 V ÷ 600 V K G A A G K Gate Trigger Current < 200 µA FS01...A FS01...B This series of Silicon Controlled R ectifiers uses a high performance PNPN technology. This part is intended for general purpose applications where high gate sensitivity is required. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature CONDITIONS All Conduction Angle, TL = 60 ºC Half Cycle, Θ = 180 º, TL = 60 ºC Half Cycle, 60 Hz, Tj = 25 ºC Half Cycle, 50 Hz, Tj = 25º C t = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. Min. 0.8 0.5 8 7 0.24 8 1 2 0.1 +125 +150 260 Max. Unit A A A A A2s V A W W ºC ºC ºC IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL -40 -40 1.6 mm from case, 10s max. PARAMETER Repetitive Peak Off State Voltage CONDITIONS Tj = -40 to +125 ºC, RGK = 1 KΩ B 200 VOLTAGE D 400 M 600 Unit V VDRM VRRM Feb - 01 FS01...A/B SENSITIVE GATE SCR Electrical Characteristics SYMBOL PARAMETER Gate Trigger Current Off-State Leakage Current On-state Voltage On-state Threshold Voltage On-state slope Resistance Gate Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise CONDITIONS MIN MAX VD = VDRM , RGK = 1KΩ, Tj = 125 ºC MAX VR = VRRM , Tj = 25 ºC MAX at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC MAX Tj = 125 ºC MAX Tj = 125 ºC MAX VD = 12 VDC , RL = 140Ω, Tj = 25 ºC MAX MAX IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC MAX MIN VD = 0.67 x VDRM , RGK = 1KΩ, Tj = 125 ºC MIN TYP MAX VD = 12 VDC , RL = 140Ω, Tj = 25 ºC SENSITIVITY 01 1 20 100 1 1.93 0.95 600 0.8 5 6 75 30 500 200 02 µA 200 µA V V mΩ V mA mA V/µs A/µs ns µs Unit IGT IDRM / IRRM VTM VT(TO) rT VGT IH IL dv / dt di / dt tgd tq Critical Rate of Current Rise IG = 10 mA, diG/dt = 0.1 A/µs, Tj = 125 ºC Gate Controlled Delay Time IG = 10 mA, diG/dt = 0.1 A/µs, Tj = 25 ºC ITM = 3x IT(AV) VD = VDRM Commutated Turn-Off Time ITM = 3x IT(AV) VR = 35 V di/dt = 10 A/µs tp = 100 µs dv/dt = 10 V/µs Tj = 125 ºC VD = 67% VDRM RGK = 1KΩ Rth(j-l) Rth(j-a) Thermal Resistance Junction-Leads for DC Thermal Resistance Junction-Ambient 80 150 ºC/W ºC/W PART NUMBER INFORMATION F FAGOR SCR CURRENT SENSITIVITY S 01 02 B A PACKAGE: A: TO92 B: RD26 VOLTAGE Feb - 01 FS01...A/B SENSITIVE GATE SCR Fig. 1: Maximum average power dissipation versus average on-state current P (W) 1 360 º Rth (j-l) Fig. 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and T lead). P (W) 1 T lead (ºC) -45 0.8 α DC 0.8 Rth (j-a) -65 0.6 α = 180 º α = 120 º 0.6 -85 0.4 0.4 α = 90 º 0.2 α = 60 º α = 30 º IT(AV)(A) 0.2 Tamb (ºC) -105 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0 20 40 60 80 -125 100 120 140 Fig. 3: Average on-state current versus lead temperature I T(AV) (A) 1 DC Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a) / Rth(j-a) 1.00 0.8 0.6 α = 180 º 0.10 0.4 0.2 T lead (ºC) tp (s) 0 0 20 40 60 80 100 120 140 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Igt (Tj = 25 ºC) 10.0 9.0 8.0 7.0 6.0 Igt Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 8 Tj initial = 25 ºC Ih (Tj) Ih (Tj = 25 ºC) 7 6 5 4 3 2 Ih 5.0 4.0 3.0 2.0 1.0 Tj (ºC) 1 Number of cycles 0.0 -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1,000 Feb - 01 FS01...A/B SENSITIVE GATE SCR Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) 100 Tj initial = 25 ºC Fig. 8: On-state characteristics (maximum values). Fig. 9: Relative variation of holding current versus gate-cathode resistance (typical values). Ih(Rgk) Ih(Rgk = 1kΩ) 5.0 Tj = 25 ºC ITM(A) 10 Tj initial 25 ºC Tj max ITSM 10 1.0 1 1 I2 t Tj max Vto = 0.95 V Rt = 0.600Ω tp(ms) VTM(V) Rgk (Ω) 0.1 1 10 0.1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0.1 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06 PACKAGE MECHANICAL DATA TO92 (Plastic) DIMENSIONS Milimeters Typ. 1.5 4.6 2.54 1.27 4.6 14.1 3.6 1.5 0.43 0.38 REF. A H C D b G a B E F A B C D E F G H a b Min. 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33 Max. 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43 Marking: type number Weight: 0.2 g PACKAGE MECHANICAL DATA C D RD26 (Plastic) DIMENSIONS Millimeters Typ. 1.5 4.6 2.54 1.27 4.6 14.1 3.6 0.43 0.38 REF. A B C D E F G a b Min. 4.55 2.42 1.15 4.55 12.7 3.55 0.38 0.33 G a B A 45º E F b Max. 4.65 2.66 1.39 4.65 15.5 3.65 0.48 0.43 Marking: type number Weight: 0.2 g Feb - 01