GVD1404-001

Sprague-Goodman ENGINEERING BULLETIN SG-950 VARACTOR DIODES Sprague-Goodman Electronics, Inc. 1700 SHAMES DRIVE, WESTBURY, NY 11590 TEL: 516-334-8700 • FAX: 516-334-8771 E-MAIL: info@spraguegoodman.com VARACTOR DIODES SG-950 SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES • Mesa epitaxial silicon construction • Silicon dioxide passivated • Superior mid range linear characteristics • High tuning ratios • High Q • Available in common cathode style • Available in chip form (add suffix -000) • Low voltage wireless phase locked loop VCOs • Phase shifters SPECIFICATIONS Reverse breakdown voltage at 10 µA DC (at 25°C): 12 V min Maximum reverse leakage current at –10 V (at 25°C): 0.05 µA DC Device dissipation at 25°C: 250 mW (derated linearly to zero at +125°C) Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°C APPLICATIONS • TCXOs, VCXOs • Low voltage wireless open loop VCOs Total Capacitance C T (pF) at –2 V min max 46 100 68 150 Total Capacitance C T (pF) at –7 V typ 6.1 13.0 Total Capacitance C T (pF) at –10 V min max 4.2 8.6 5.2 10.6 Q min at –2 V (10 MHz) 75 50 Model Number Single GVD1401-001 GVD1404-001 Common Cathode — — 3 TOP VIEW 3 0.031 TYP 0.80 0.035 TYP 0.90 500 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 ± 0.005 2.93 ± 0.13 0.079 2.0 100 0.038 ± 0.003 0.96 ± 0.065 0.037 0.95 0.037 0.95 PAD LAYOUT 50 0.091 ± 0.008 2.3 ± 0.2 0.051 ± 0.004 1.3 ± 0.1 CT (pF) 0.021 ± 0.003 0.53 ± 0.08 0.075 ± 0.005 1.91 ± 0.13 GVD1401-001 0.040 ± 0.007 1.03 ± 0.18 GVD1404-001 10 0.016 ± 0.002 0.41 ± 0.04 TYP 0.007 ± 0.003 0.18 ± 0.08 0.0047 ± 0.0013 0.12 ± 0.033 TYP 5 0.5 1 2 3 456 10 20 30 50 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1. 2 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com VARACTOR DIODES SG-950 SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES • Mesa epitaxial silicon construction • Silicon dioxide passivated • Superior mid range linear characteristics • High tuning ratios • High Q • Available in common cathode Style • Available in chip form (add suffix -000) • Low voltage wireless phase locked loop VCOs • Phase shifters SPECIFICATIONS Reverse breakdown voltage at 10 µA DC (at 25°C): 12 V min Maximum reverse leakage current at –10 V (at 25°C): 0.05 µA DC Device dissipation at 25°C: 250 mW (derated linearly to zero at +125°C) Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°C APPLICATIONS • TCXOs, VCXOs • Low voltage wireless open loop VCOs Total Capacitance C T (pF) at –1 V min max 3.00 5.85 10.35 15.50 45.00 3.60 7.15 12.65 18.50 54.00 Capacitance Ratio C T at –1 V C T at –3 V min max 1.4 1.6 1.6 1.6 1.6 1.9 2.0 2.0 2.0 2.0 Capacitance Ratio C T at –1 V C T at –6 V min max 2.6 2.8 2.9 3.0 3.0 3.3 3.4 3.4 3.5 3.5 Q min at –4 V (50 MHz) 1500 1200 1000 900 750 Model Number Common Cathode GVD20433-004 GVD20434-004 GVD20435-004 GVD20436-004 --- Single GVD20433-001 GVD20434-001 GVD20435-001 GVD20436-001 GVD20437-001 3 TOP VIEW 3 0.031 TYP 0.80 0.035 TYP 0.90 100.0 50.0 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 ± 0.005 2.93 ± 0.13 0.079 2.0 CT (pF) 10.0 0.038 ± 0.003 0.96 ± 0.065 0.037 0.95 0.037 0.95 PAD LAYOUT 0.091 ± 0.008 2.3 ± 0.2 0.051 ± 0.004 1.3 ± 0.1 5.0 GVD20436-001 3.0 2.0 GVD20434-001 GVD20435-001 0.021 ± 0.003 0.53 ± 0.08 0.075 ± 0.005 1.91 ± 0.13 0.040 ± 0.007 1.03 ± 0.18 1.0 0.5 0.016 ± 0.002 0.41 ± 0.04 TYP 0.3 0.007 ± 0.003 0.18 ± 0.08 0.0047 ± 0.0013 0.12 ± 0.033 TYP 0.5 1 2 3 456 10 20 30 50 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1. SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com 3 VARACTOR DIODES SG-950 SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES • Mesa epitaxial silicon construction • Silicon dioxide passivated • Superior mid range linear characteristics • High tuning ratios • High Q • Available in common cathode style • Available in chip form (add suffix -000) • Low voltage wireless phase locked loop VCOs • Phase shifters SPECIFICATIONS Reverse breakdown voltage at 10 µA DC (at 25°C): 12 V min Maximum reverse leakage current at –10 V (at 25°C): 0.05 µA DC Device dissipation at 25°C: 250 mW (derated linearly to zero at +125°C) Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°C APPLICATIONS • TCXOs, VCXOs • Low voltage wireless open loop VCOs Total Capacitance C T (pF) at –1 V min 13.0 13.0 17.0 17.0 26.0 26.0 36.0 36.0 Total Capacitance C T (pF) at –2.5 V min max 6.5 6.5 8.5 8.5 13.0 13.0 18.0 18.0 10.0 10.0 13.0 13.0 20.0 20.0 27.0 27.0 Total Capacitance C T (pF) at –8 V max 2.7 2.7 3.2 3.2 4.7 4.7 6.2 6.2 Q min at –4 V (50 MHz) 750 350 600 300 500 225 400 150 Model Number Single GVD20442-001 GVD20443-001 GVD20444-001 GVD20445-001 GVD20446-001 GVD20447-001 GVD20448-001 GVD20449-001 Common Cathode GVD20442-004 GVD20443-004 GVD20444-004 GVD20445-004 --------- Total Capacitance C T (pF) at –1 V min 9.0 Total Capacitance C T (pF) at –2.5 V min max 4.5 6.5 Total Capacitance C T (pF) at –4 V max 3.0 Q min at –4 V (50 MHz) 400 Model Number Single GVD20450-001 Common Cathode GVD20450-004 3 TOP VIEW 3 0.031 TYP 0.80 0.035 TYP 0.90 50.0 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 ± 0.005 2.93 ± 0.13 0.079 2.0 10.0 0.038 ± 0.003 0.96 ± 0.065 0.037 0.95 0.037 0.95 PAD LAYOUT CT (pF) 5.0 GVD20448-001 3.0 2.0 GVD20446-001 GVD20444-001 0.091 ± 0.008 2.3 ± 0.2 0.051 ± 0.004 1.3 ± 0.1 0.021 ± 0.003 0.53 ± 0.08 0.075 ± 0.005 1.91 ± 0.13 1.0 0.040 ± 0.007 1.03 ± 0.18 GVD20450-001 0.5 0.016 ± 0.002 0.41 ± 0.04 TYP 0.3 0.007 ± 0.003 0.18 ± 0.08 0.0047 ± 0.0013 0.12 ± 0.033 TYP 0.5 1 2 3 456 10 20 30 50 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1. 4 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com VARACTOR DIODES SG-950 SUPER HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package (SMLP) FEATURES • Mesa epitaxial silicon construction • Silicon dioxide passivated • Fits footprint for SOD-323, SOD-123 and smaller • High frequency (VHF to 8 GHz) • Available on carrier and reel • Available in chip form (add suffix -000) • T wo package styles including lower cost, flat top version • Alternate notched termination version available, contact factory for outline drawing APPLICATIONS • PCS • GSM • Cellular • WANS • TAGS • DECT • AMPS SPECIFICATIONS Reverse breakdown voltage at 10 µA DC (at 25°C): 12 V min Maximum reverse leakage current at –10 V (at 25°C): 0.05 µA DC Device dissipation at 25°C: 250 mW (derated linearly to zero at +125°C) Operating junction temperature: –65°C to +125°C Storage temperature: –65°C to +125°C Total Capacitance C T (pF) at – 1 V min 36.0 26.0 17.0 13.0 9.0 4.0 1.8 1.2 0.6 Total Capacitance C T (pF) at – 2.5 V min max 18.0 27.0 13.0 20.0 8.5 13.0 6.5 10.0 4.5 6.5 2.0 3.0 1.1 1.5 0.8 1.1 0.5 0.8 Total Capacitance C T (pF) at – 4 V max 12.0 9.0 6.0 4.5 3.0 1.5 0.8 0.6 0.4 Total Capacitance C T (pF) at – 8 V max 6.2 4.7 3.2 2.7 1.7 1.0 0.55 0.45 0.35 Q min at – 4 V (50 MHz) 400 500 600 750 900 1200 1400 1600 1800 Model Number* GVD90001 – _ GVD90002 – _ GVD90003 – _ GVD90004 – _ GVD90005 – _ GVD90006 – _ GVD90007 – _ GVD90008 – _ GVD90009 – _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ * For complete model number, select “ Dash No. ” f rom chart below. TERMINATIONS (GOLD PLATED) DOT INDICATES CATHODE END B Dash No. - 011 A 0.10 2.5 0.12 3.0 B C1 C2 D 0.015 ± 0.004 0.38 ± 0.1 0.020 ± 0.005 0.51 ± 0.1 0.020 ± 0.005 0.51 ± 0.1 0.015 ± 0.004 0.38 ± 0.1 0.011 ± 0.003 0.28 ± 0.08 K L M 0.050 0.035 0.050 1.3 0.89 1.3 0.030 0.070 0.112 0.76 1.8 2.84 D TYP BOTTOM VIEW A TOP VIEW - 111 - 012 - 112 C1 0.060 0.035 0.050 1.5 0.89 1.3 0.030 0.080 0.132 0.76 2.0 3.35 K TYP EPOXY ENCAPSULANT - 013 L SIDE VIEW FOR - 01__ 0.200 0.100 0.035 0.050 5.08 2.54 0.89 1.3 0.030 0.120 0.212 0.76 3.05 5.38 - 113 - 014 0.075 0.050 0.035 0.050 1.9 1.3 0.89 1.3 0.030 0.070 0.087 0.76 1.8 2.2 M MOUNTING PAD LAYOUT EPOXY ENCAPSULANT C2 - 114 - 015 0.062 0.042 0.030 0.050 1.6 1.1 0.76 1.3 0.020 0.060 0.072 0.51 1.5 1.8 SIDE VIEW FOR - 11__ - 115 All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.003/ 0.08. Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This package can be used for multiple diode designs (such as common cathode or common anode). Contact factory for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations. SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com 5 VARACTOR DIODES SG-950 WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES Microwave Hyperabrupt Series FEATURES • Mesa epitaxial silicon construction • Silicon dioxide passivated • Superior wide range linear characteristics • High tuning ratios • High Q • Available in common cathode style • Available in chip form (add suffix -000) • High linearity VCOs • Phase shifters SPECIFICATIONS Reverse breakdown voltage at 10 µA DC (at 25°C): 20 V min Maximum reverse leakage current at –20 V (at 25°C): 0.05 µA DC Device dissipation at 25°C: 250 mW (derated linearly to zero at +125°C) Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°C APPLICATIONS • Low phase noise VCOs • Phase locked loop VCOs Total Capacitance C T (pF) at – 0 V min 2.7 4.2 6.3 11.9 26.0 Total Capacitance C T (pF) at – 4 V min max 1.25 1.70 2.20 3.70 9.00 1.75 2.50 3.80 5.50 11.00 Total Capacitance C T (pF) at – 20 V min max 0.43 0.52 0.68 0.94 1.90 0.57 0.72 0.96 1.30 2.50 Q min at – 4 V (50 MHz) 1000 850 700 600 400 Model Number Single GVD30422-001 GVD30432-001 GVD30442-001 GVD30452-001 GVD30462-001 Common Cathode GVD30422-004 GVD30432-004 GVD30442-004 GVD30452-004 GVD30462-004 3 TOP VIEW 3 0.031 TYP 0.80 0.035 TYP 0.90 50.0 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 ± 0.005 2.93 ± 0.13 0.079 2.0 10.0 0.038 ± 0.003 0.96 ± 0.065 0.037 0.95 0.037 0.95 PAD LAYOUT CT (pF) 5.0 3.0 2.0 GVD30432-001 GVD30452-001 0.091 ± 0.008 2.3 ± 0.2 0.051 ± 0.004 1.3 ± 0.1 0.021 ± 0.003 0.53 ± 0.08 0.075 ± 0.005 1.91 ± 0.13 0.040 ± 0.007 1.03 ± 0.18 1.0 GVD30422-001 0.5 0.016 ± 0.002 0.41 ± 0.04 TYP 0.3 0.007 ± 0.003 0.18 ± 0.08 0.0047 ± 0.0013 0.12 ± 0.033 TYP 0.5 1 2 3 456 10 20 30 50 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1. 6 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com VARACTOR DIODES SG-950 WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES VHF/UHF Hyperabrupt Series FEATURES • Mesa epitaxial silicon construction • Silicon dioxide passivated • Superior wide range linear characteristics • High tuning ratios • High Q • Available in common cathode style • Available in chip form (add suffix -000) • High linearity VCOs • Phase shifters SPECIFICATIONS Reverse breakdown voltage at 10 µA DC (at 25°C): 25 V min Maximum reverse leakage current at –20 V (at 25°C): 0.05 µA DC Device dissipation at 25°C: 250 mW (derated linearly to zero at +125°C) Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°C APPLICATIONS • Low phase noise VCOs • Phase locked loop VCOs Total Capacitance C T (pF) at – 3 V min max 9.5 9.5 26.0 26.0 14.5 14.5 32.0 32.0 Total Capacitance C T (pF) at – 25 V min max 1.8 1.8 4.3 4.3 2.8 2.8 6.0 6.0 Q min at – 4 V (50 MHz) 200 750 200 500 Model Number Single GVD30501-001 GVD30502-001 GVD30503- 001 GVD30504-001 Common Cathode — — — — 3 TOP VIEW 3 0.031 TYP 0.80 0.035 TYP 0.90 50.0 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 ± 0.005 2.93 ± 0.13 0.079 2.0 GVD30503-001 10.0 0.038 ± 0.003 0.96 ± 0.065 CT (pF) 0.037 0.95 0.037 0.95 PAD LAYOUT 5.0 3.0 GVD30502-001 2.0 0.091 ± 0.008 2.3 ± 0.2 0.051 ± 0.004 1.3 ± 0.1 0.021 ± 0.003 0.53 ± 0.08 0.075 ± 0.005 1.91 ± 0.13 1.0 0.040 ± 0.007 1.03 ± 0.18 0.5 0.016 ± 0.002 0.41 ± 0.04 TYP 0.3 0.007 ± 0.003 0.18 ± 0.08 0.0047 ± 0.0013 0.12 ± 0.033 TYP 0.5 1 2 3 456 10 20 30 50 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1. SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com 7 VARACTOR DIODES SG-950 WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES VHF/UHF Hyperabrupt Series FEATURES • Mesa epitaxial silicon construction • Silicon dioxide passivated • Superior wide range linear characteristics • High tuning ratios • High Q • Available in common cathode style • Available in chip form (add suffix -000) • High linearity VCOs • Phase shifters SPECIFICATIONS Reverse breakdown voltage at 10 µA DC (at 25°C): 22 V min Maximum reverse leakage current at –20 V (at 25°C): 0.05 µA DC Device dissipation at 25°C: 250 mW (derated linearly to zero at +125°C) Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°C APPLICATIONS • Low phase noise VCOs • Phase locked loop VCOs Total Capacitance C T (pF) at – 4 V min max 18.0 45.0 100.0 22.0 55.0 120.0 Total Capacitance C T (pF) at – 8 V min max 7.5 18.0 39.0 10.5 25.0 55.0 Total Capacitance C T (pF) at – 20 V min max 2.7 6.6 14.0 3.5 9.0 19.0 Q min at – 4 V (50 MHz) 160 125 80 Model Number Single GVD30601- 0 01 GVD30602-001 GVD30603-001 Common Cathode — — — 3 TOP VIEW 3 0.031 TYP 0.80 0.035 TYP 0.90 500 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 ± 0.005 2.93 ± 0.13 100 0.079 2.0 0.038 ± 0.003 0.96 ± 0.065 50 0.037 0.95 0.037 0.95 PAD LAYOUT GVD30602-001 GVD30603-001 0.091 ± 0.008 2.3 ± 0.2 0.051 ± 0.004 1.3 ± 0.1 CT (pF) GVD30601-001 0.021 ± 0.003 0.53 ± 0.08 0.075 ± 0.005 1.91 ± 0.13 10 0.040 ± 0.007 1.03 ± 0.18 5 3 0.5 1 2 3 4 56 10 20 30 50 0.016 ± 0.002 0.41 ± 0.04 TYP 0.007 ± 0.003 0.18 ± 0.08 0.0047 ± 0.0013 0.12 ± 0.033 TYP REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1. 8 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com VARACTOR DIODES SG-950 MICROWAVE HYPERABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package (SMLP) FEATURES • Mesa epitaxial silicon construction • Silicon dioxide passivated • Fits Footprint for SOD-323, SOD-123 and smaller • High frequency (VHF to 8 GHz) • Available on carrier and reel • Available in chip form (add suffix -000) • T wo package styles including lower cost, flat top version • Alternate notched termination version available, contact factory for outline drawing APPLICATIONS • PCS • GSM • Cellular • WANS • TAGS • AMPS • DECT SPECIFICATIONS Reverse breakdown voltage at 10 µA DC (at 25°C): 22 V min Maximum reverse leakage current at –20 V (at 25°C): 0.05 µA DC Device dissipation at 25°C: 250 mW (derated linearly to zero at +125°C) Operating junction temperature: –65°C to +125°C Storage temperature: –65°C to +125°C Total Capacitance C T (pF) at 0 V typical 26.0 14.0 7.0 5.0 3.0 2.0 Total Capacitance C T (pF) at – 4 V min max 8.75 4.45 2.65 1.75 1.30 0.85 10.80 5.50 3.30 2.20 1.65 1.10 Total Capacitance C T (pF) at – 20 V min max 1.85 0.85 0.65 0.50 0.40 0.30 2.50 1.30 0.90 0.70 0.55 0.45 Q min at – 4 V (50 MHz) 400 600 700 850 1000 1200 Model Number* GVD92101 – _ GVD92102 – _ GVD92103 – _ GVD92104 – _ GVD92105 – _ GVD92106 – _ _ _ _ _ _ _ _ _ _ _ _ _ * For complete model number, select “ Dash No. ” f rom chart below. TERMINATIONS (GOLD PLATED) DOT INDICATES CATHODE END B Dash No. - 011 A 0.10 2.5 0.12 3.0 B C1 C2 D 0.015 ± 0.004 0.38 ± 0.1 0.020 ± 0.005 0.51 ± 0.1 0.020 ± 0.005 0.51 ± 0.1 0.015 ± 0.004 0.38 ± 0.1 0.011 ± 0.003 0.28 ± 0.08 K L M 0.050 0.035 0.050 1.3 0.89 1.3 0.030 0.070 0.112 0.76 1.8 2.84 D TYP BOTTOM VIEW A TOP VIEW - 111 - 012 - 112 C1 0.060 0.035 0.050 1.5 0.89 1.3 0.030 0.080 0.132 0.76 2.0 3.35 K TYP EPOXY ENCAPSULANT - 013 L SIDE VIEW FOR - 01__ 0.200 0.100 0.035 0.050 5.08 2.54 0.89 1.3 0.030 0.120 0.212 0.76 3.05 5.38 - 113 - 014 0.075 0.050 0.035 0.050 1.9 1.3 0.89 1.3 0.030 0.070 0.087 0.76 1.8 2.2 M MOUNTING PAD LAYOUT EPOXY ENCAPSULANT C2 - 114 - 015 0.062 0.042 0.030 0.050 1.6 1.1 0.76 1.3 0.020 0.060 0.072 0.51 1.5 1.8 SIDE VIEW FOR - 11__ - 115 All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.003/ 0.08. Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This package can be used for multiple diode designs (such as common cathode or common anode). Contact factory for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations. SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com 9 VARACTOR DIODES SG-950 HIGH Q ABRUPT TUNING VARACTOR DIODES FEATURES • Mesa epitaxial silicon construction • Silicon dioxide passivated • Economy price • Mil grade performance • High Q • Available in common cathode style • Available in chip form (add suffix -000) • Phase locked loop VCOs • Moderate bandwidth VCOs SPECIFICATIONS Reverse breakdown voltage at 10 µA DC (at 25°C): 30 V min Maximum reverse leakage current at –25 V (at 25°C): 0.05 µA DC Device dissipation at 25°C: 250 mW (derated linearly to zero at +125°C) Operating junction temperature: –55°C to +125°C Storage temperature: –55°C to +125°C Capacitance Ratio CT at 0 V C T at – 30 V min 3.4 3.5 3.5 3.7 3.7 3.8 3.9 3.9 4.0 4.0 4.0 4.1 4.1 4.2 4.2 4.2 APPLICATIONS • Low phase noise VCOs Total Capacitance C T (pF) at – 4 V (±10 %) 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 Model Number Q min at – 4 V (50 MHz) 3200 3000 3000 3000 2500 2500 2500 2000 2000 2000 2000 1800 1600 1250 1000 850 Common Cathode GVD1202-004 GVD1203-004 GVD1204-004 GVD1205-004 GVD1206-004 GVD1207-004 GVD1208-004 GVD1209-004 GVD1210-004 — — — — — — — Single GVD1202-001 GVD1203-001 GVD1204-001 GVD1205-001 GVD1206-001 GVD1207-001 GVD1208-001 GVD1209-001 GVD1210-001 GVD1211-001 GVD1212-001 GVD1213-001 GVD1214-001 GVD1215-001 GVD1216-001 GVD1217-001 3 TOP VIEW 3 0.031 TYP 0.80 0.035 TYP 0.90 20 1 2 (SINGLE) 1 2 (COMMON CATHODE) 0.115 ± 0.005 2.93 ± 0.13 10 0.079 2.0 GVD1213-001 5 0.037 0.95 0.038 ± 0.003 0.96 ± 0.065 GVD1211-001 0.091 ± 0.008 2.3 ± 0.2 0.051 ± 0.004 1.3 ± 0.1 0.037 0.95 PAD LAYOUT JUNCTION 3 CAPACITANCE (pF) 2 GVD1207-001 GVD1209-001 GVD1203-001 1 0.021 ± 0.003 0.53 ± 0.08 0.075 ± 0.005 1.91 ± 0.13 0.040 ± 0.007 1.03 ± 0.18 0.016 ± 0.002 0.41 ± 0.04 TYP 0.5 0.007 ± 0.003 0.18 ± 0.08 0.0047 ± 0.0013 0.12 ± 0.033 TYP 1 2 3 4 56 10 20 30 REVERSE VOLTAGE (VOLTS) SOT-23 PACKAGE - Consult factory for additional package configurations. All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1. 10 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com VARACTOR DIODES SG-950 MICROWAVE ABRUPT TUNING VARACTOR DIODES Surface Mount Low Parasitic Package (SMLP) FEATURES • Mesa epitaxial silicon construction • Silicon dioxide passivated • Fits Footprint for SOD-323, SOD-123 and smaller • High Frequency (VHF to 8 GHz) • Available on carrier and reel • Available in chip form (add suffix -000) • T wo package styles including lower cost, flat top version • Alternate notched termination version available, contact factory for outline drawing APPLICATIONS • PCS • GSM • Cellular • WANS • TAGS • AMPS • DECT SPECIFICATIONS Reverse breakdown voltage at 10 µA DC (at 25°C): 30 V min Maximum reverse leakage current at –25 V (at 25°C): 0.05 µA DC Device dissipation at 25°C: 250 mW (derated linearly to zero at +125°C) Operating junction temperature: –65°C to +125°C Storage temperature: –65°C to +125°C Total Capacitance C T (pF) at – 4 V (±10%) 0.8 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 Capacitance Ratio C T at 0 V C T at – 4 V min 1.5 1.6 1.7 1.8 1.9 2.0 2.0 2.1 2.1 2.2 2.2 Capacitance Ratio C T at – 4 V C T at – 30 V min 1.45 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 Q min at – 4 V (50 MHz) 3900 3800 3700 3600 3500 3400 3300 3100 2700 2600 2500 Model Number* GVD91300 GVD91301 GVD91302 GVD91303 GVD91304 GVD91305 GVD91306 GVD91307 GVD91308 GVD91309 GVD91310 – – – – – – – – – – – _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ * For complete model number, select “ Dash No. ” f rom chart below. Dash No. B TERMINATIONS (GOLD PLATED) DOT INDICATES CATHODE END A 0.10 2.5 0.12 3.0 B C1 C2 D 0.015 ± 0.004 0.38 ± 0.1 0.020 ± 0.005 0.51 ± 0.1 0.020 ± 0.005 0.51 ± 0.1 0.015 ± 0.004 0.38 ± 0.1 0.011 ± 0.003 0.28 ± 0.08 K L M - 011 D TYP BOTTOM VIEW A TOP VIEW 0.050 0.035 0.050 1.3 0.89 1.3 0.030 0.070 0.112 0.76 1.8 2.84 - 111 - 012 - 112 C1 0.060 0.035 0.050 1.5 0.89 1.3 0.030 0.080 0.132 0.76 2.0 3.35 K TYP EPOXY ENCAPSULANT - 013 L SIDE VIEW FOR - 01__ 0.200 0.100 0.035 0.050 5.08 2.54 0.89 1.3 0.030 0.120 0.212 0.76 3.05 5.38 - 113 - 014 0.075 0.050 0.035 0.050 1.9 1.3 0.89 1.3 0.030 0.070 0.087 0.76 1.8 2.2 M MOUNTING PAD LAYOUT EPOXY ENCAPSULANT C2 - 114 - 015 0.062 0.042 0.030 0.050 1.6 1.1 0.76 1.3 0.020 0.060 0.072 0.51 1.5 1.8 SIDE VIEW FOR - 11__ - 115 All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.003 / 0.08. Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This package can be used for multiple diode designs (such as common cathode or common anode). Contact factory for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations. SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com 11 VARACTOR DIODES SG-950 MINIATURE MICROWAVE SILICON VARACTOR DIODES Surface Mount Monolithic Package (SMMP) FEATURES • Multilayer construction • Low SMT profile • Low series inductance • Low parasitic capacitance ( 0.06 pF ) • High Q • Available on carrier and reel APPLICATIONS Microwave Voltage Controlled Oscillators (VCOs) Ideal for Wide Bandwidth Applications (VHF-10 GHz) SPECIFICATIONS Reverse breakdown voltage at 10 µA DC (at 25°C): See below Maximum reverse leakage current at –10 V (at 25°C): 0.05 µA DC Operating junction temperature: –65°C to +125°C Storage temperature: –65°C to +125°C Capacitance Ratio C T at – 1 V C T at – 3 V min max 1.4 2.2 Capacitance Ratio C T at – 1 V C T at – 6 V min max 2.6 3.6 Total Capacitance C T (pF) at – 1 V min max 2.6 3.8 Q min at – 4 V (50 MHz) 1500 Model Number GVD60100 R everse breakdown voltage at 10 µA DC: 15 V min Total Capacitance C T (pF) at – 0 V typical 3.25 Total Capacitance C T (pF) at – 4 V min max 0.9 1.5 Total Capacitance C T (pF) at – 20 V max max 0.2 0.45 Q min at – 4 V (50 MHz) 1000 Model Number GVD60200 Reverse breakdown voltage at 10 µA DC: 22 V min Models shown above supplied bulk in vials. For 300 pc gel pack, add “ -03" to the model number. For 5000 pc carrier and reel, add “ -50" to the model number. MARKING FOR CATHODE END 0.019 0.48 0.040 1.02 TOP VIEW 0.015 0.38 SIDE VIEW 0.020 0.51 GOLD METALIZED PADS (2 PLACES) BOTTOM VIEW 0.011 0.28 0.016 0.41 0.012 0.30 All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1. 12 SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com © 2000 SPRAGUE-GOODMAN ELECTRONICS, INC., ALL RIGHTS RESERVED. PRINTED IN THE U.S.A. 50104