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MS808C06

MS808C06

  • 厂商:

    ETC2

  • 封装:

  • 描述:

    MS808C06 - SCHOTTKY BARRIER DIODE - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
MS808C06 数据手册
MS808C06 (30A) SCHOTTKY BARRIER DIODE 9.0±0.2 7.0±0.2 4 0.6±0.2 0.1 (60V / 30A ) Outline drawings, mm 10.1±0.3 9.0±0.2 Solder Plating 2.0 1.5 2.0 2.5 0.5±0.2 (5.8) 1 1.0±0.2 1.0±0.2 2 3 0.4±0.1 3.6±0.2 Features Low VF Super high speed switching High reliability by planer design 2.8±0.2 (4.0) (0.8) (3.2) Connection diagram Applications High speed power switching 1 2 4 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=118°C Sine wave 10ms Conditions Rating 60 60 30* 200 -40 to +150 -40 to +150 Unit V V A A °C °C * Average forward current of centertap full wave connection Electrical characteristics (Ta=25°C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=12.5A VR=VRRM Junction to case Max. 0.58 20 1.2 Unit V mA °C/W (2.2) (2.1) (10.1) (60V / 30A ) Characteristics Forward Characteristic 100 TS808C06 (30A) (typ.) Reverse Characteristic (typ.) Tj=150 C 10 2 o Tj=125 C 10 1 o (mA) 10 Tj=100 C o Tj=125 1 o C C Reverse Current Tj=150 o C (A) 10 0 Forward Current Tj=100 Tj=25 o o C 10 -1 IR 0.1 Tj= 25 C 10 -2 o IF 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 -3 0 10 20 30 40 50 60 70 VF Forward Voltage (V) VR Reverse Voltage (V) Forward Power Dissipation 22 20 20 18 16 14 Square wave λ =60 12 10 8 6 4 2 Per 1element 0 0 2 4 6 8 10 12 14 16 0 0 10 o o o Reverse Power Dissipation DC Io 360° 18 (W) λ 360° (W) VR 16 α Reverse Power Dissipation Forward Power Dissipation 14 12 10 α =180 o Square wave λ =120 Sine wave λ=180 o Square wave λ=180 DC 8 6 4 WF PR 2 20 VR 30 40 50 (V) 60 70 Io Average Forward Current (A) Reverse Voltage Current Derating (Io-Tc) 160 150 140 130 120 110 100 90 80 360° λ Io VR=30V Junction Capacitance Characteristic (typ.) C) DC (pF) o o o 1000 Sine wave λ =180 Case Temperature Square wave λ =180 Square wave λ =120 Square wave λ =60 Tc 70 60 0 5 10 Cj 100 o Junction Capacitance ( o 15 20 25 30 35 40 45 10 100 λ :Conduction angle of forward current for each rectifier element Io Average Output Current (A) VR Reverse Voltage (V) Io:Output current of center-tap full wave connection (60V / 30A ) Surge Capability 1000 TS808C06 (30A) Peak Half - Wave Current I FSM (A) 100 10 1 10 100 Number of Cycles at 50Hz Transient Thermal Impedance 10 1 ( Transient Thermal Impedance 10 0 o C/W ) 10 -1 10 -2 10 -3 10 -2 10 -1 10 0 10 1 10 2 t Time (sec.)
MS808C06 价格&库存

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