OM1N100SA

OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS PART NUMBER OM1N100SA OM3N100SA OM5N100SA OM6N100SA OM3N100ST OM1N100ST RDS(on) 8.0 5.2 3.0 2.0 5.4 8.2 ID 1.0A 3.5A 5.0A 6.0A 3.5A 1.0A 3.1 SCHEMATIC DRAIN PIN CONNECTION TO-254AA TO-257AA GATE SOURCE 123 Pin 1: Drain Pin 2: Source Pin 3: Gate 123 4 11 R1 Supersedes 2 05 R0 3.1 - 15 3.1 OM1N100SA/ST Series ELECTRICAL CHARACTERISTICS: STATIC P/N OM1N100SA Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) On-State Drain Current 1.0 SA ST SA ST 2.0 (See Note 3) 1000 TC = 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: STATIC P/N OM3N100SA Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) On-State Drain Current 3.5 SA ST SA ST 2.0 (See Note 3) 1000 TC = 25° unless otherwise noted Min. Typ. Max. Units Test Conditions V 4.0 100 -100 0.25 1.0 V nA nA mA mA A 8.0 8.2 15.0 15.4 VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V, VDS = 0 VGS = - 20 V, VDS = 0 VDS = Max. Rat., VGS = 0 VDS = 0.8 x Max. Rat., VGS = 0, TC = 125° C VDS > ID(on) x RDS(on) Max. VGS = 10 V VGS = 10 V ID =.5A VGS = 10 V ID =.5A, TC = 100° C Min. Typ. Max. Units Test Conditions V 4.0 100 - 100 0.25 1.0 V nA nA mA mA A 5.2 5.4 10.0 10.4 VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 x Max. Rat., VGS = 0, TC = 125° C VDS > ID(on) x RDS(on) Max VGS = 10 V VGS = 10 V ID =.5A VGS = 10 V ID =.5A, TC = 100° C RDS(on) Static Drain-Source On-State Resisitance1, 3 RDS(on) Static Drain-Source On-State Resistance1, 3 RDS(on) Static Drain-Source On-State Resistance1, 3 RDS(on) Static Drain-Source On-State Resistance1, 3 DYNAMIC gfs Ciss Coss Crss Td(on) tr Td(off) tf Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1.0 950 110 40 90 90 115 75 S pF pF pF ns ns ns ns VDD = 600 V, ID = 3.5 RG = 50W VGS = 10 V , DYNAMIC VDS = 10V, ID = 1 A VGS = 0 VDS = 25 V f = 1 MHz gfs Ciss Coss Crss Td(on) tr Td(off) tf Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1.0 950 110 40 90 90 115 75 S pF pF pF ns ns ns ns VDD = 600 V, ID = 3.5 RG = 50W VGS = 10 V , 3.1 - 16 VDS = 10, ID = 1.5 A VGS = 0 VDS = 25 V f = 1 MHz BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage2 Reverse Recovery Time 900 2.5 V ns 14 A 3.5 A Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage2 Reverse Recovery Time 900 3.5 14 2.5 A A V ns Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D S TC = 25 C, IS = 3.5 A, VGS = 0 IF = IS, VDD = 100 V dlF/ds = 100 A/ms, TJ = 150 C VSD trr TC = 25 C, IS = 3.5 A, VGS = 0 IF = IS, VDD = 100 V dlF/ds = 100 A/ms, TJ = 150 C 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area. 3 OM1N100ST - All characteristics the same except RDS(on) 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area. 3 OM3N100ST - All characteristics the same except RDS(on) ELECTRICAL CHARACTERISTICS: STATIC P/N OM5N100SA (See Note 3) Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) On-State Drain Current 5.0 2.0 1000 TC = 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: STATIC P/N OM6N100SA (See Note 3) Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current ID(on) On-State Drain Current 6.0 2.0 1000 TC = 25° unless otherwise noted Min. Typ. Max. Units Test Conditions V 4.0 100 -100 0.25 1.0 V nA nA mA mA A 3.0 6.0 VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V, VDS = 0 VGS = - 20 V, VDS = 0 VDS = Max. Rat., VGS = 0 VDS = 0.8 x Max. Rat., VGS = 0, TC = 125° C VDS > ID(on) x RDS(on)Max., VGS = 10 V VGS = 10 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A TC = 100 C Min. Typ. Max. Units Test Conditions V 4.0 100 - 100 0.25 1.0 V nA nA mA mA A 2.0 4.0 VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V, VDS = 0 VGS = - 20 V, VDS = 0 VDS = Max. Rat., VGS = 0 VDS = 0.8 x Max. Rat., VGS = 0, TC = 125° C VDS > ID(on) x RDS(on)Max., VGS = 10 V VGS = 10 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A TC = 100° C RDS(on) Static Drain-Source On-State Resisitance1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 DYNAMIC gfs Ciss Coss Crss Td(on) tr tf Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Fall Time 4.0 2600 350 150 65 55 62 25 S pF pF pF ns ns ns ns VDD = 800 V, ID =6A RG = 7W VGS = 10 V , DYNAMIC VDS = 25 VDS(on), ID = 2.5 A VGS = 0 VDS = 25 V f = 1 MHz gfs Ciss Coss Crss Td(on) tr tf Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Fall Time 4.0 2600 350 150 65 55 62 25 S pF pF pF ns ns ns ns VDD = 800 V, ID = 6A RG = 7W VGS = 10 V , 3.1 - 17 VDS = 25V, ID = 3.0 A VGS = 0 VDS = 25 V f = 1 MHz Tr(Voff) Off-Voltage Rise Time Tr(Voff) Off-Voltage Rise Time BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current2 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 1100 2.5 V ns 24 A 6 A Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current2 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 1000 6 24 2.5 A A V ns Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D S OM1N100SA/ST Series TC = 25 C, IS = 6 A, VGS = 0 IF = IS,VDD = 100 V dlF/ds = 100 A/ms VSD trr TC = 25 C, IS = 6 A, VGS = 0 IF = IS,VDD = 100 V dlF/ds = 100 A/ms, TJ = 150 C 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area. 3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area. 3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package 3.1 OM1N100SA/ST Series ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter OM1N100SA OM3N100SA OM5N100SA OM6N100SA OM1N100ST OM3N100ST Units IAR Avalanche Current (Repetitive or Non-Repetitive) Tj = 25°C Tj = 100°C 3.5 2 130 3.5 2 130 6 3.4 850 6 3.4 850 A A mJ EAS Single Pulse Avalanche Energy Starting Tj = 25°C, ID = IAR, VDD = 25V EAR Repetitive Avalanche Energy (Pulse width limited by TJ max, d < 1%) 6 6 16 16 mJ VDS VDGR ID @ TC = 25°C ID @ TC = 100°C IDM VGS PD @ TC = 25°C PD @ TC =100°C Junction-To-Case Drain-Source Voltage Drain-Source Voltage (RGS = 20k ) Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Gate-Source Voltage Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor 1000 1000 .50 .30 14 ±20 90 32 .87 .020 1000 1000 3.5 2.0 14 ±20 90 32 .87 .020 1000 1000 5.0 3.1 24 ±20 130 51 2.10 .020 1000 1000 6.0 3.7 24 ±20 130 51 2.10 .020 V V A A A V W W W/°C W/°C Junction-To-Ambient Linear Derating Factor TJ Tstg Lead Temperature Operating and Storage Temperature Range (1/16" from case for 10secs.) -55 to 150 300 -55 to 150 300 -55 to 150 300 -55 to 150 300 °C °C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. THERMAL RESISTANCE 3.1 RthJC Junction-To-Case Max. 1.15 1.15 .48 .48 °C/W MECHANICAL OUTLINE TO-257AA .420 .410 .200 .190 .045 .035 .665 .645 .537 .527 .430 .410 .038 MAX. .550 .510 .005 .800 .790 .144 DIA. TO-254AA .545 .535 .050 .040 .150 .140 .685 .665 .550 .530 .750 .500 .005 .045 .035 .150 TYP. .260 .249 .150 TYP. .035 .025 .100 TYP. .120 TYP. PACKAGE OPTIONS FET 4 FET 3 GSDGSD DSGGSD D S FET 1 G G S FET 2 D FET 1 FET 3 Z-TAB 6 PIN SIP MOD PAK Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246