OM6027SC

OM6025SC OM6027SC OM6031SC OM6026SC OM6028SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V, Up To 26 Amp N-Channel, Size 6 MOSFETs, High Energy Capability FEATURES • • • • • • Isolated Hermetic Metal Package Size 6 Die, High Energy Fast Switching, Low Drive Current Ease of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. This series also features avalanche high energy capability at elevated temperatures. MAXIMUM RATINGS PART NUMBER OM6025SC/OM6032SC OM6026SC/OM6031SC OM6027SC/OM6028SC VDS 400 500 1000 RDS(ON) .20 .27 1.30 ID (Amp) 24 22 10 3.1 SCHEMATIC 4 11 R2 Supersedes 1 07 R1 3.1 - 97 OM6025SC - OM6032SC ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter OM6025SC OM6026SC OM6027SC OM6032SC OM6031SC OM6028SC VDS VDGR ID @ TC = 25°C IDM PD @ TC = 25°C Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current Pulsed Drain Current Maximum Power Dissipation Derate Above 25°C Ambient WDSS (1) Single Pulse Energy Drain To Source @ 25°C TJ Tstg Lead Temperature Operating and Storage Temperature Range (1/8" from case for 5 secs.) -55 to 150 275 -55 to 150 275 -55 to 150 275 °C °C 1000 1200 1000 mJ 400 400 24 92 165 .025 500 500 22 85 165 .025 1000 1000 10 40 165 .025 V V A A W W/°C Units Note 1: VDD = 50V, ID = as noted THERMAL RESISTANCE (MAXIMUM) at TA = 25°C RthJC RthJA Junction-to-Case Junction-to-Ambient Derate above 25°C TC .76 40 1.32 °C/W °C/W W/°C Free Air Operation MECHANICAL OUTLINES .695 .685 .550 .285 .530 .250 TYP . . 25 ∅ 1 2 PLACES .045 .035 .165 .155 .695 .685 .270 .240 .045 .035 .250 TYP . 125 TYP . . .707 .697 .835 .815 3.1 .500 MIN. . 45 1 REF . .200 .400 .940 ±.002 .060 DIA. TYP. 3 PLACES .140 .005 .550 .530 .092 MAX. .270 MAX. .750 .500 .065 .055 .140 TYP. .005 .200 TYP. OM6028SC, OM6031SC, OM6032SC OM6025SC, OM6026SC, OM6027SC PACKAGE OPTIONS MOD PAK 6 PIN SIP NOTE: MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 3.1 - 98 OM6025SC - OM6032SC ELECTRICAL CHARACTERISTICS: Characteristic OM6025SC, OM6032SC (TC = 25° unless otherwise noted) Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain (VDS = 400 V, VGS = 0) (VDS = 400 V, VGS = 0, TJ = 125° C) Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSF IGSSR VGS(th) 2.0 1.5 rDS(on) VDS(on) gFS Ciss Coss Crss td(on) (VDD = 250 V, ID = 24 A, Rgen = 4.3 ohms) (VDS = 400 V, ID = 24 A, VGS = 10 V) tr td(off) tf Qg Qgs Qgd VSD (IS = 24 A, d/dt = 100 A/µs) ton trr 14 5.4 5.4 mhos 3.0 4.0 3.5 0.20 Ohm Vdc V(BR)DSS IDSS 0.25 1.0 100 100 nAdc nAdc 400 Vdc mAdc ON CHARACTERISTICS* Gate-Threshold Voltage (VDS = VGS, ID = 0.25 mAdc (TJ = 125° C) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12 Adc) Drain-Source On-Voltage (VGS = 10 Vdc) (ID = 24 A) (ID = 12 A, TJ = 125° C) Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc) Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) 5600 78 230 pF SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 70 190 160 160 110 20 55 140 nC ns SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage Forward Turn-On Time Reverse Recovery Time 1.1 1.6 Vdc ns 1000 ** 500 ELECTRICAL CHARACTERISTICS: Characteristic OM6026SC, OM6031SC (TC = 25° unless otherwise noted) Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain (VDS = 500 V, VGS = 0) (VDS = 500 V, VGS = 0, TJ = 125° C) Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSF IGSSR VGS(th) 2.0 1.5 rDS(on) VDS(on) gFS Ciss Coss Crss td(on) (VDD = 250 V, ID = 22 A, Rgen = 4.3 ohms) (VDS = 400 V, ID = 22 A, VGS = 10 V) tr Td(off) tf Qg Qgs Qgd VSD (IS = 22 A, d/dt = 100 A/µs) ton trr 13 8.0 8.0 mhos 3.0 4.0 3.5 0.27 Ohm Vdc V(BR)DSS IDSS 0.25 1.0 100 100 nAdc nAdc 500 Vdc mAdc ON CHARACTERISTICS* Gate-Threshold Voltage (VDS = VGS, ID = 0.25 mAdc (TJ = 125° C) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 11 Adc) Drain-Source On-Voltage (VGS = 10 Vdc) (ID = 22 A) (ID = 11 A, TJ = 125° C) Forward Transconductance (VDS = 15 Vdc, ID = 11 Adc) Vdc 3.1 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) 5600 680 200 pF SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 70 190 160 160 115 20 60 140 nC ns SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage Forward Turn-On Time Reverse Recovery Time 1.1 1.6 Vdc ns 1000 ** 500 * Indicates Pulse Test = 300 µsec, Duty Cycle = 2% ** Limited by circuit inductance 3.1 - 99 OM6025SC - OM6032SC ELECTRICAL CHARACTERISTICS: Characteristic OM6027SC, OM6028SC (TC = 25° unless otherwise noted) Symbol Min. Typ. Max. Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Zero Gate Voltage Drain (VDS = 1000 V, VGS = 0) (VDS = 1000 V, VGS = 0, TJ = 125° C) Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSF IGSSR VGS(th) 2.0 1.5 rDS(on) VDS(on) gFS Ciss Coss Crss td(on) (VDD = 250 V, ID = 5 A, Rgen = 4.3 ohms) (VDS = 400 V, ID = 10 A, VGS = 10 V) tr td(off) tf Qg Qgs Qgd VSD (IS = 10 A, d/dt = 100 A/µs) ton trr 5.0 15 15.3 mhos 3.0 4.0 3.5 1.3 Ohm Vdc V(BR)DSS IDSS 0.25 1.0 100 100 nAdc nAdc 1000 Vdc mAdc ON CHARACTERISTICS* Gate-Threshold Voltage (VDS = VGS, ID = 0.25 mAdc (TJ = 125° C) Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 5 Adc) Drain-Source On-Voltage (VGS = 10 Vdc) (ID = 10 A) (ID = 5 A, TJ = 125° C) Forward Transconductance (VDS = 15 Vdc, ID = 5 Adc) Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) 3900 300 65 pF SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 40 100 100 100 100 20 40 140 nC ns SOURCE DRAIN DIODE CHARACTERISTICS Forward On-Voltage Forward Turn-On Time Reverse Recovery Time 1.5 Vdc ns 1000 ** 600 * Indicates Pulse Test = 300 µsec, Duty Cycle = 2% ** Limited by circuit inductance 3.1 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246