OM6111SA

OM6009SA OM6011SA OM6109SA OM6111SA OM6010SA OM6012SA OM6110SA OM6112SA POWER MOSFETS IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, Up To 22 Amp, N-Channel MOSFET In Hermetic Metal Package, With Optional Zener Gate Clamp Protection FEATURES • • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Hi-Rel Screened To MIL-S-19500, TX, TXV And S Levels Bi-Lateral Zener Gate Protection (Optional) Ceramic Feedthroughs Available DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. The MOSFET gates are protected using bi-lateral zeners in the OM6109SA series. MAXIMUM RATINGS PART NUMBER OM6009SA, OM6109SA OM6010SA, OM6110SA OM6011SA, OM6111SA OM6012SA, OM6112SA VDS 100V 200V 400V 500V RDS(ON) .095 .18 .55 .85 ID(MAX) 22A 18A 10A 8A 3.1 Note: OM61XX Series include gate protection circuitry. SCHEMATIC POWER RATING 4 11 R3 Supersedes 1 07 R2 3.1 - 79 3.1 OM6009SA - OM6112SA ELECTRICAL CHARACTERISTICS: STATIC P/N OM6009SA / OM6109SA Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Gate-Body Leakage (OM6109) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 22 0.1 0.2 2.0 100 TC = 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: STATIC P/N OM6010SA / OM6110SA Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Gate-Body Leakage (OM6110) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 18 1.4 0.1 0.2 2.0 200 TC = 25° unless otherwise noted Min. Typ. Max. Units Test Conditions V 4.0 100 -100 ± 500 0.25 1.0 V nA nA nA mA mA A 1.275 1.425 .085 .095 .130 .155 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VGS = ± 12.8 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 15 A VGS = 10 V, ID = 15 A VGS = 10 V, ID = 15 A, TC = 125 C Min. Typ. Max. Units Test Conditions V 4.0 100 - 100 ± 500 0.25 1.0 V nA nA nA mA mA A 1.8 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VGS = ± 12.8 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A VGS = 10 V, ID = 10 A, TC = 125 C VDS(on) Static Drain-Source On-State VDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 0.14 0.18 0.28 0.36 gfs Ciss Coss Crss Td(on) tr Td(off) tf 10.0 1275 550 160 16 19 42 24 S(W ) VDS 2 VDS(on), ID = 15 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 30 V, ID = 5 A Rg = 5 W , VGS = 10 V (MOSFET) switching times are essentially independent of operating temperature. gfs Ciss Coss Crss Td(on) tr Td(off) tf 6.0 1000 250 100 17 52 36 30 S(W ) VDS 2 VDS(on), ID = 10 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 75 V, ID @ 18 A Rg = 5 W , VGS = 10 V (MOSFET) switching times are essentially independent of operating temperature. Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 200 - 2.5 V ns - 108 A - 27 A Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350 - 18 - 72 -2 A A V ns TC = 25 C, IS = -24 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms VSD trr 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) (W ) 3.1 - 80 DYNAMIC Forward Transductance1 DYNAMIC Forward Transductance1 Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D S TC = 25 C, IS = -18 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms ELECTRICAL CHARACTERISTICS: STATIC P/N OM6011SA / OM6111SA Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Gate-Body Leakage (OM6111) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 10 0.1 0.2 2.0 400 TC = 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IGSSR IGSS IDSS Gate-Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Gate-Body Leakage (OM6112) Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 8.0 3.2 0.8 0.1 0.2 2.0 500 TC = 25° unless otherwise noted STATIC P/N OM6012SA / OM6112SA Min. Typ. Max. Units Test Conditions V 4.0 100 - 100 ± 500 0.25 1.0 V nA nA nA mA mA A 3.4 0.85 V VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VGS = ± 12.8 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 4 A VGS = 10 V, ID = 4 A VGS = 10 V, ID = 4 A, TC = 125 C VDS(on) Static Drain-Source On-State RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1 V 4.0 100 -100 ± 500 0.25 1.0 V nA nA nA mA mA A VGS = 0, ID = 250 mA VDS = VGS, ID = 250 mA VGS = 20 V VGS = - 20 V VGS = ± 12.8 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS = 0, TC = 125° C VDS 2 VDS(on), VGS = 10 V VGS = 10 V, ID = 5 A VGS = 10 V, ID = 5 A VGS = 10 V, ID = 5 A, TC = 125 C Min. Typ. Max. Units Test Conditions VDS(on) Static Drain-Source On-State 2.35 2.75 0.47 0.55 0.93 1.10 V 1.50 1.65 gfs Ciss Coss Crss Td(on) tr Td(off) tf 4.0 1150 165 70 17 12 45 30 S(W ) VDS 2 VDS(on), ID = 5 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 175 V, ID @ 5 A Rg = 5 W , VGS = 10 V (MOSFET) switching times are essentially independent of operating temperature. gfs Ciss Coss Crss Td(on) tr Td(off) tf 4.0 1275 200 85 17 5 42 14 S(W ) VDS 2 VDS(on), ID = 4 A pF pF pF ns ns ns ns VGS = 0 VDS = 25 V f = 1 MHz VDD = 200 V, ID = 4 A Rg = 5 W , VGS = 10 V (MOSFET) switching times are essentially independent of operating temperature. Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 530 -2 V ns - 40 A - 10 A Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM S Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 700 -8 - 32 -2 A A V ns TC = 25 C, IS = -10 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms VSD trr 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. 1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%. (W ) (W ) 3.1 - 81 DYNAMIC Forward Transductance1 DYNAMIC Forward Transductance1 Modified MOSPOWER symbol showing the integral P-N Junction rectifier. G D OM6009SA - OM6112SA S TC = 25 C, IS = -18 A, VGS = 0 TJ = 150 C,IF = IS, dlF/ds = 100 A/ms 3.1 OM6009SA - OM6112SA ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter VDS VDGR ID @ TC = 25°C ID @ TC = 100°C IDM VGS PD @ TC = 25°C PD @ TC = 100°C Junction To Case Drain-Source Voltage Drain-Gate Voltage (RGS = 1 M ) Continuous Drain Current Continuous Drain Current Pulsed Drain Current1 Gate-Source Volt. (Unclamped Gate) Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor 2 2 OM6009 OM6109 100 100 ± 22 ± 17 ± 88 ± 20 125 50 1.0 .020 OM6010 OM6110 200 200 ± 18 ± 11 ± 72 ± 20 125 50 1.0 .020 OM6011 OM6111 400 400 ± 10 ±6 ± 40 ± 20 125 50 1.0 .020 OM6012 OM6112 500 500 ±8 ±5 ± 32 ± 20 125 50 1.0 .020 Units V V A A A V W W W/°C W/°C Junction To Ambient Linear Derating Factor TJ Tstg Lead Temperature Operating and Storage Temperature Range (1/16" from case for 10 secs.) -55 to 150 300 -55 to 150 -55 to 150 -55 to 150 300 300 300 °C °C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. 2 Package Pin Limitation = 25 Amps THERMAL RESISTANCE RthJC RthJA Junction-to-Case Junction-to-Ambient 1.0 50 °C/W °C/W Free Air Operation MECHANICAL OUTLINE .144 DIA. .940 .740 .260 MAX .200 .100 2 PLCS. .040 .545 .535 .050 .040 3.1 .290 .540 .250 .685 .665 .800 .790 .550 .530 .125 DIA. 2 PLS. .540 .125 2 PLCS. 123 .500 MIN. 1 Pin 1: Drain Pin 2: Source Pin 3: Gate .150 2 3 .550 .510 .005 .150 .300 .040 DIA. 3 PLCS. .045 .035 .150 TYP. .260 .249 .150 TYP. PACKAGE OPTIONS MOD PAK Z-TAB 6 PIN SIP NOTE: Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA MOSFETs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246