OM6502ST

OM6501ST OM6502ST INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE 500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available Screened to MIL-S-19500, TX, TXV And S Levels DESCRIPTION The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters. MAXIMUM RATINGS @ 25°C Unless Specified Otherwise PART NUMBER OM6501ST OM6502ST IC (Cont.) @ 90°C, A 5 10 V(BR)CES V 500 500 VCE (sat) (Typ.) V 2.8 2.8 Tf (Typ.) ns 400 400 qJC °C/W 3.8 3.0 PD W 35 42 TJ °C 150 150 3.1 SCHEMATIC Collector MECHANICAL OUTLINE .420 .410 .200 .190 .045 .035 .665 .645 PACKAGE OPTIONS .150 .140 123 C EG .537 .527 .430 .410 .038 MAX. Gate .750 .500 MOD PAK .005 Emitter .035 .025 .100 TYP. .120 TYP. Pin 1: Collector Pin 2: Emitter Pin 3: Gate 6 PIN SIP Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 4 11 R2 Supersedes 2 07 R1 3.1 - 139 3.1 PRELIMINARY DATA: OM6502ST IGBT CHARACTERISTICS Min. Typ. Max. Units Test Conditions 500 0.25 1.0 ±100 V mA mA nA VCE = 0 IC = 250 µA VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 0 TC = 125°C IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr tr(Volt) tf tcross Eoff Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Off Voltage Rise Time Fall Time Cross-Over Time Turn-Off Losses 2.0 260 50 20 37 150 .35 .81 1.2 .95 S pF pF pF nS nS µS µS µS mJ VCE = 20 V, IC = 5 A VGE = 0 VCE = 25 V f = 1 mHz VCC = 400 V, IC = 5 A VGE = 15 V, Rg = 47 VCEclamp = 400 V, IC = 5 A VGE = 15 V, Rg = 100 L = 0.1 mH, Tj = 100°C 2.8 3.0 V 2.0 3.0 4.0 V V VCE = VGE, IC = 250 µA VGE = 15 V, IC = 5 A TC = 25°C VGE = 15 V, IC = 5 A TC = 100°C gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tf tcross Eoff VCE(sat) Collector Emitter VGE = ±20 V VCE = 0 V VGE(th) IGES Gate Emitter Leakage Current Parameter - ON Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Fall Time Cross-Over Time Turn-Off Losses 2.5 950 140 80 150 1000 700 1500 1.2 1.5 2.0 4.0 S pF pF pF nS nS nS nS µS µS µS mJ VCEclamp = 350 V, IC = 10 A VGE = 15 V, Rg = 100 L = 180 µH, Tj = 100°C VCC = 400 V, IC = 10 A VGE = 15 V, Rg = 100 VCE = 20 V, IC = 10 A VGE = 0 VCE = 25 V f = 1 mHz 2.8 3.0 V 2.0 3.0 4.0 V V VCE = VGE, IC = 250 µA VGE = 15 V, IC = 10 A TC = 25°C VGE = 15 V, IC = 10 A TC = 100°C VCE(sat) Collector Emitter ±100 nA ICES Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage Zero Gate Voltage Drain Current 0.25 1.0 mA mA Min. Typ. Max. Units Test Conditions 500 V VCE = 0 IC = 250 µA VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 0 TC = 125°C VGE = ±20 V VCE = 0 V OM6501ST - OM6502ST PRELIMINARY DATA: OM6501ST IGBT CHARACTERISTICS Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage ICES Zero Gate Voltage Drain Current 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 Switching-Resistive Load Switching-Resistive Load Switching-Inductive Load Switching-Inductive Load