OM6517SA

OM6517SA OM6526SA INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE 1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Levels Ceramic Feedthroughs Available DESCRIPTION This IGBT power transistor features the high switching speeds of a power MOSFET and the low on-resistance of a bipolar transistor. It is ideally suited for high power switching applications such as frequency converters for 3Ø motors, UPS and high power SMPS. MAXIMUM RATINGS @ 25°C Unless Specified Otherwise PART NUMBER OM6517SA OM6526SA IC (Cont.) @ 90°C, A 20 15 V(BR)CES V 1000 1000 VCE (sat) (Typ.) V 4.0 4.0 Tf (Typ.) ns 300 300 qJC °C/W 1.0 1.5 PD W 125 85 TJ °C 150 150 3.1 SCHEMATIC .940 MECHANICAL OUTLINE .144 DIA. .260 MAX .200 .100 2 PLCS. .040 Collector .545 .535 .740 .540 .050 .040 .250 .290 .685 .665 .800 .790 Z-Pak .125 DIA. 2 PLS. TO-254 .540 .550 .530 Gate .125 2 PLCS. .500 MIN. .550 .510 .040 DIA. 3 PLCS. .150 .005 Emitter .150 .300 .045 .035 .150 TYP. .260 .249 .150 TYP. PACKAGE OPTIONS MOD PAK Z-TAB 6 PIN SIP Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA. IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 4 11 R2 Supersedes 2 07 R1 3.1 - 157 3.1 OM6517SA OM6526SA PRELIMINARY DATA: OM6517SA IGBT CHARACTERISTICS Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage ICES Zero Gate Voltage Drain Current 0.25 1.0 ±100 mA mA nA Min. Typ. Max. Units Test Conditions 1000 V VCE = 0 IC = 250 µA VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 0 TC = 125°C IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tf Eoff Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Fall Time Turn-Off Losses 5.5 2000 160 65 50 200 200 300 200 200 1.5 S pF pF pF nS nS nS nS nS nS VCEclamp = 600 V, IC = 15 A VGE = 15 V, Rg = 3.3 VCE = 20 V, IC = 15 A VGE = 0 VCE = 25 V f = 1 mHz VCC = 600 V, IC = 15 A VGE = 15 V, Rg = 3.3 , Tj = 125°C 4.0 4.5 V 4.5 3.0 6.5 V V VCE = VGE, IC = 1 mA VGE = 15 V, IC = 15 A TC = 25°C VGE = 15 V, IC = 15 A TC = 125°C VCE(sat) Collector Emitter VGE = ±20 V VCE = 0 V PRELIMINARY DATA: OM6526SA IGBT CHARACTERISTICS Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage ICES Zero Gate Voltage Drain Current IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tf Eoff Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Fall Time Turn-Off Losses 3.5 1300 100 50 50 200 200 300 200 200 1.1 S pF pF pF nS nS nS nS nS nS VCEclamp = 600 V, IC = 10 A VGE = 15 V, Rg = 3.3 VCE = 20 V, IC = 10 A VGE = 0 VCE = 25 V f = 1 mHz VCC = 600 V, IC = 10 A VGE = 15 V, Rg = 3.3 , Tj = 125°C 4.0 4.5 V 4.5 3.0 6.5 V V VCE = VGE, IC = 700 µA VGE = 15 V, IC = 10 A TC = 25°C VGE = 15 V, IC = 10 A TC = 125°C VCE(sat) Collector Emitter 150 700 ±100 µA µA nA Min. Typ. Max. Units Test Conditions 1000 V VCE = 0 IC = 150 µA VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 0 TC = 125°C VGE = ±20 V VCE = 0 V 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 Switching-Resistive Load Switching-Resistive Load Switching-Inductive Load Switching-Inductive Load mWs L = 1 mH, Tj = 125°C mWs L = 1 mH, Tj = 125°C