OPE5194

GaAs Infrared Emitter C O PE5194 C The OPE5194 is GaAs infrared emitting diode that is designed for low forward voltage and high reliability. This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 plastic package and has narrow beam angle with lensed package and cup frame. DIMENSIONS (Unit : mm) 5.0 5.7 8.7 7.7 FEATURESC • High-output powerC • Narrow beam angle • High reliability • Available for pulse operating • Low cost C APPLICATIONSC • Optical emitters • Optical switches • Smoke sensors • IR remote control • IR sound transmission 1.3 Max 24.0 Min 2- 0.5 2.0 2.5 Anode Cathode Tolerance : ±0.2mm STORAGE • Condition : 5°C~35°C,R.H.60% • Terms : within 3 months from production date • Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGSC C C CCCCCCCCCCCCCCCCC(Ta=25°C ) Item Symbol Rating Unit Power Dissipation PDC 150 C Forward current IFC 100 EC Pulse forward current CCCCCC IFPC 1.0 AC 1 Reverse voltage VRC 5.0 C Operating temp. Topr. -25~ +85 ° CC Tsol. 260. ° CC Soldering temp. CCCCCCCCCCCCCCC 2 1 .Duty ratio = 1/100, pulse width=0.1ms. 2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICALCHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle C C Symbol VF IR Ct Ie p (Ta=25°C) Conditions IF =100mA VR= 5V f = 1MHz IF=100mA IF= 50mA IF= 50mA IF=100mA 21 Min. Typ. 1.4 20 55 940 45 ±10 Max. 1.7 10 Unit V µA pF mW/ nm nm deg.  CC GaAs Infrared Emitter FORWARD CURRENT Vs. AMBIENT TEMP. 200 100 50 30 10 5 3 1 0.5 0.3 0.1 0 20 40 60 80 Ambient Temperature Ta() 100 OPE5194 RADIANT INTENSITY Vs. FORWARD CURRENT. Ta=25 Ta=25 100 80 60 40 20 0 -20 1 3 5 10 30 50 100 200 500 Forward Current IF(mA) RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. IF=50mA 3 2 1 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 1.0 RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. Ta=25 0.8 0.6 0.4 0.2 0.0 800 Ambient Temperature Ta() FORWARD CURRENT Vs. FORWARD VOLTAGE Ta=25 850 900 950 1000 1050 Emission Wavelength (nm) 100 50 30 20 10 5 4 3 2 ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY Ta=25 -20° -10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90° 1.0 -30° -40° -50° -60° -70° -80° -90° 1.0 1 1.0 1.1 1.2 1.3 1.4 Forward Voltage VF(V) 1.5 1.6 0.5 0 0.5 Relative Radiant intensity 22