P2803NVG

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 27.5mΩ 34mΩ ID 7A -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range 1 SYMBOL VDS VGS N-Channel P-Channel 30 ±20 7 6 20 2 1.3 -55 to 150 -30 ±20 -6 -5 -20 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = 0V, VGS = ±20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -30 1 -1 1.5 -1.5 2.5 -2.5 ±100 ±100 nA V MIN TYP MAX UNIT Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS 1 JUL-25-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch 1 -1 10 -10 20 -20 30 43.5 20.5 27.5 16 13 40 56 mΩ 27.5 34 S A µA VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 6A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Drain-Source Resistance1 On-State VGS = -4.5V, ID = -5A RDS(ON) VGS = 10V, ID = 7A VGS = -10V, ID = -6A Forward Transconductance1 gfs VDS = 5V, ID = 7A VDS = -5V, ID = -6A DYNAMIC Input Capacitance Ciss N-Ch N-Channel VGS = 0V, VDS = 15V, f = 1MHz P-Channel P-Ch N-Ch P-Ch 680 920 105 190 75 120 14 18.5 1.9 2.7 3.3 4.5 4.6 7.7 4 5.7 20 20 5 9.5 7 11.5 6 8.5 30 30 8 14 nS nC pF Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 2 Crss VGS = 0V, VDS = -15V, f = 1MHz N-Ch P-Ch N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 7A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -6A N-Channel VDD = 10V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch VDD = -10V N-Ch ID ≅ -1A, VGS = -10V, RGEN = 3Ω P-Ch ID ≅ 1A, VGS = 10V, RGEN = 3Ω P-Channel Qg Qgs Qgd td(on) tr td(off) Fall Time tf 2 JUL-25-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS N-Ch P-Ch N-Ch P-Ch IF = 1A, VGS = 0V IF = -1A, VGS = 0V N-Ch P-Ch 1.3 -1.3 2.6 -2.6 1 -1 V A Pulsed Current3 Forward Voltage1 1 2 ISM VSD Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P2803NVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 3 JUL-25-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 Is - Reverse Drain Current(A) T A = 125° C 1 25° C 0.1 -55° C 0.01 0.001 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 4 JUL-25-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free 5 JUL-25-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free 6 JUL-25-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free P-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 -Is - Reverse Drain Current(A) V GS = 0V 10 T A = 125°C 1 0.1 25°C -55°C 0.01 0.001 0 0.2 0.6 0.4 0.8 1.0 1.2 -VSD - Body Diode Forward Voltage(V) 1.4 7 JUL-25-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free 8 JUL-25-2005 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2803NVG SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA mm Dimension Min. A B C D E F G 1.35 0.1 4.8 3.8 5.8 0.38 mm Dimension Max. 5.0 4.0 6.2 0.51 H I J K L 1.75 0.25 M N 0° Typ. 4.9 3.9 6.0 0.445 1.27 1.55 0.175 Min. 0.5 0.18 Typ. 0.715 0.254 0.22 4° Max. 0.83 0.25 8° J F D E G I H K B C A 9 JUL-25-2005