P2804NVG

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 40 -40 RDS(ON) 28mΩ 65mΩ ID 7A -5A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) 1 1 SYMBOL VDS VGS N-Channel P-Channel 40 ±20 7 6 20 2 1.3 -55 to 150 275 -40 ±20 -6 -5 -20 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RθJA TYPICAL MAXIMUM 62.5 UNITS °C / W Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA N-Ch P-Ch N-Ch P-Ch 40 -40 1.0 -1.0 1.5 -1.5 2.5 -2.5 V MIN TYP MAX UNIT 1 AUG-19-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = -32V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch N-Ch P-Ch ±100 ±100 1 -1 nA VDS = 30V, VGS = 0V, TJ = 55 °C N-Ch VDS = -30V, VGS = 0V, TJ = 55 °C P-Ch µA 10 -10 On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 6A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 30 80 21 50 19 11 42 105 A Drain-Source On-State Resistance1 VGS = -4.5V, ID = -4A RDS(ON) VGS = 10V, ID = 7A VGS = -10V, ID = -5A mΩ 28 65 Forward Transconductance1 gfs VDS = 10V, ID = 7A VDS = -10V, ID = -5A S DYNAMIC Input Capacitance Ciss N-Ch N-Channel VGS = 0V, VDS = 10V, f = 1MHz P-Channel P-Ch N-Ch P-Ch 790 690 175 310 65 75 16 14 2.5 2.2 2.1 1.9 nC pF Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Crss VGS = 0V, VDS = -10V, f = 1MHz N-Ch P-Ch N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 7A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -5A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Qg Qgs Qgd 2 AUG-19-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 td(on) N-Channel VDS = 20V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2.2 6.7 7.5 9.7 11.8 19.8 3.7 12.3 4.4 13.4 15 19.4 21.3 35.6 7.4 22.2 nS tr ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Channel VDS = -20V, RL = 1Ω td(off) tf N-Ch ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current IS N-Ch P-Ch N-Ch P-Ch IF = IS, VGS = 0V IF = IS, VGS = 0V Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 1.3 -1.3 2.6 -2.6 1 -1 V A Pulsed Current 3 ISM VSD Forward Voltage1 N-Ch P-Ch REMARK: THE PRODUCT MARKED WITH “P2804NVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 3 AUG-19-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free TYPICAL PERFORMANCE CHARACTERISTICS N-CHANNEL Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 Is - Reverse Drain Current(A) T A = 125° C 1 25° C 0.1 -55° C 0.01 0.001 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 4 AUG-19-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free 5 AUG-19-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free P-CHANNEL 100 -Is - Reverse Drain Current(A) V GS = 0V 10 T A = 125° C 1 0.1 25° C -55° C 0.01 0.001 0 0.8 1.0 1.2 0.2 0.6 0.4 -VSD - Body Diode Forward Voltage(V) 1.4 6 AUG-19-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free 7 AUG-19-2004 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2804NVG SOP-8 Lead-Free SOIC-8(D) MECHANICAL DATA mm Dimension Min. A B C D E F G 1.35 0.1 4.8 3.8 5.8 0.38 Typ. 4.9 3.9 6.0 0.445 1.27 1.55 0.175 1.75 0.25 Max. 5.0 4.0 6.2 0.51 H I J K L M N 0° Dimension Min. 0.5 0.18 Typ. 0.715 0.254 0.22 4° 8° Max. 0.83 0.25 mm J F D E G I H K B C A 8 AUG-19-2004