P6803NAG

NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 30 -30 RDS(ON) 68mΩ 145mΩ ID 3.5A -2A G1 D1 G2 D2 D1 S1 6 1 5 2 D2 4 3 G2 S1 S2 G1 S2 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) 1 SYMBOL VDS VGS N-Channel P-Channel 30 ±20 3.5 2.8 10 1.15 0.73 -55 to 150 275 -30 ±20 -2.3 -1.8 -10 UNITS V V TC = 25 °C TC = 70 °C ID IDM A TC = 25 °C TC = 70 °C PD Tj, Tstg TL W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Ambient Junction-to-Lead 1 2 SYMBOL RθJA RθJA RθJL TYPICAL MAXIMUM 110 150 80 UNITS °C / W °C / W °C / W t≦5sec Steady State Steady State Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 1 MAR-09-2006 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC VGS = 0V, ID = 250µA Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA VDS = VGS, ID = 250µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 30 -30 1 -1 1.5 -1.5 2.5 -2.5 ±100 ±100 1 -1 µA 10 -10 V MIN TYP MAX UNIT nA VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch VDS = -20V, VGS = 0V, TJ = 55 °C P-Ch On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V VGS = 4.5V, ID = 2A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 8 -8 75 185 55 115 4.5 3 98 245 A Drain-Source Resistance1 On-State VGS = -4.5V, ID = -1.5A RDS(ON) VGS = 10V, ID = 3.5A VGS = -10V, ID = -2.3A mΩ 68 145 Forward Transconductance1 gfs VDS = 5V, ID = 2.5A VDS = -5V, ID = -2A DYNAMIC S Input Capacitance Ciss N-Channel VGS = 0V, VDS = 15V, f = 1MHz P-Channel N-Ch P-Ch N-Ch P-Ch 200 190 40 60 20 30 pF Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0V, VDS = -15V, f = 1MHz N-Ch P-Ch 2 MAR-09-2006 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 2 Qg N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, ID = 2.5A P-Channel VDS = 0.5V(BR)DSS, VGS = -10V, ID = -2A N-Channel VDS = 15V, RL = 15Ω N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 6.5 4.5 1.2 1.2 1.6 0.9 7 8 12 11 12 14 7 8 8.5 6.0 Qgs nC Qgd td(on) 11 12 18 18 18 21 11 12 nS tr ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Channel VDS = -15V, RL = 15Ω td(off) Fall Time tf N-Ch ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Forward Voltage1 Reverse Recovery Time 1 2 VSD trr IF = 0.8A, VGS = 0V IF = -0.8A, VGS = 0V IF = 0.8A, dlF/dt = 100A / µS IF = -0.8A, dlF/dt = 100A / µS N-Ch P-Ch N-Ch P-Ch 40 40 1.2 -1.2 80 80 V nS Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THIS PRODUCT MARKED WITH “51YWW” Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 6 5 4 51YWW 1 2 3 Marking Description: 5 - N+P MOSFET 1 - Serial Number Y - Year W - Week 3 MAR-09-2006 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free N-CHANNEL On-Region Characteristics. VGS= 10V 6.0V 4.5V On-Resistance Variation with Drain Current and Gate Voltage. R , Noemalized Drain-source on-resistance 2 1.8 1.6 1.4 5.0V VGS= 4.0V 4.5V 10 ID, Drain-source current(A) 8 4.0V 6 4 DS(ON) 3.5V 1.2 1 0.8 6.0V 7.0V 10V 2 3.0V 0 0 1 2 3 4 0 2 4 6 8 10 VDS, Drain-Source Voltage(V) ID, Drain Current(A) On-Resistance Variation with Gate-to-Source Voltage. On-Resistance Variation with Temperature. RDS(ON), On-resistance(OHM) R , Normalized Drain-source on-resistance 1.6 ID= 3.5A VGS= 10V 0.275 ID=2A 1.4 0.225 1.2 0.175 DS(ON) 1 0.8 0.125 TA= 125°C TA= 25°C 0.075 0.6 -50 0.025 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, Junction Temperature(°C) VGS, Gate to Source Voltage(V) Transfer Characteristics. Is, Reverse Drain Current (A) 10 VDS= 5V TA= -55° C 125° C Body Diode Forword Voltage Variation with Source Current and Temperature. 10 VGS= 0V 8 1 TA= 125° C 25°C -55° C ID, Drain Current(A) 25° C 6 0.1 4 0.01 2 0.001 0 1 2 3 4 5 6 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VGS, Gate to Source Voltage(V) VSD, Body Diode Forword Voltage(V) 4 MAR-09-2006 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free Gate-Charge Characteristics 10 ID = 3.5A VDS= 5V 15V Capacitance Characteristics 400 Capacitance(pF) 8 10V 300 Ciss 200 VGS (Voltage) 6 4 100 Coss Crss 0 5 10 15 20 25 30 2 0 0 0 1 2 3 4 5 6 7 Qg (nC) VDS,Drain to Source Voltage(V) Maximum Safe Operating Area. 30 Single Pulse Maximum Power Dissipation. 5 10 100 us S (O RD T IMI N)L 4 ID, Drain Current(A) 3 1 0.3 0.1 0.03 1m s 10m s 100 ms 1s DC Power(W) 30 50 3 2 VGS= 10V SINGLE PULSE RθJA=150° C/W TA=25° C 0.1 0.3 1 3 1 VGS= 10V SINGLE PULSE RθJA=150°C/W TA=25°C 0.1 1 10 100 300 0.01 10 0 0.01 VDS, Drain-Source Voltage(V) Single pulse time(SEC) 5 MAR-09-2006 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free P-CHANNEL On-Region Characteristics RDS(ON),Normalized Drain-Source On-Resistance 10 On-Resistance Variation with Drain Current and Gate Voltage. 3 VGS= -10V - 6.0V VGS=-3.5V ID,Drain Current(A) 8 - 4.5V - 4.0V - 3.5V 2.5 6 2 - 4.0V - 4.5V - 5.0V - 6.0V -10.0V 4 1.5 2 1 0 0 1 2 3 4 5 0.5 0 2 4 6 8 10 - VDS,Drain-Source Voltage(V) - ID,Drain Current(A) On-Resistance Variation with Temperature 1.6 On-Resistance Variation with Gate-to-Source Voltage. 0.4 RDS(ON),Normalized Drain-Source On-Resistance 1.4 RDS(ON),On-Resistance(OHM) ID= -2.3A VGS= -10V ID = -1.5A 0.3 1.2 TA=125°C 0.2 1 0.8 0.1 TA=25°C 0.6 -50 -25 0 25 50 75 100 125 150 0 2 4 5 6 10 TJ,Junction Temperature(°C) - VGS,Gate To Source Voltage(V) Transfer Characteristics 5 10 Body Diode Forward Voltage Variation With Source Current and Temperature. -IS,Reverse Drain Current(A) VGS=0V TA=125°C 0.1 25°C 0.01 - 55°C 0.001 VDS= - 5V TA= - 55°C 125°C 25°C -ID,Drain Current(A) 4 1 3 2 1 0 1.5 0.0001 2.5 3.5 4.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VGS,Gate To Source Voltage(V) -VSD,Body Diode Forward Voltage(V) 6 MAR-09-2006 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free G ate-Charge Characteristics 10 ID = -2.0A V DS= -5V -10V Capacitance Characteristics 400 Capacitance(pF) 8 300 VGS (Voltage) 6 -15V 200 Ciss 4 100 2 Coss 0 0 0 1 2 3 4 5 6 Crss 0 5 10 15 20 25 30 Q g (nC) VDS,Drain to Source Voltage(V) Maximum Safe Operating Area. 30 Single Pulse Maximum Power Dissipation. 5 10 100 us S (O RD T IMI N)L 4 ID, Drain Current(A) 3 1 0.3 0.1 0.03 1m s 10m s 100 ms 1s DC Power(W) 30 50 3 2 VGS= 10V SINGLE PULSE RθJA=150° C/W TA=25° C 0.1 0.3 1 3 1 VGS= 10V SINGLE PULSE RθJA=150°C/W TA=25°C 0.1 1 10 100 300 0.01 10 0 0.01 VDS, Drain-Source Voltage(V) Single pulse time(SEC) Transient Thermal Response Curve. r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.01 Single Pulse P(pk) t1 t2 0.02 RθJA(t) = r(t) * RθJA RθJA=150°C/W TJ-TA=P*RθJA(t) Duty Cycle, D= t1/ t2 0.001 0.01 0.1 1 10 100 300 0.01 0.0001 t1 Time(Sec) 7 MAR-09-2006 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P6803NAG TSOP-6 Lead-Free TSOP- 6 MECHANICAL DATA mm Dimension Min. A B C D E F G 2.5 1.5 2.7 0.7 0 0.3 0.4 Typ. 0.95 2.8 1.6 2.9 3.1 1.7 3.1 1.2 0.15 0.5 Max. H I J K L M N Dimension Min. 0.08 0.3 Typ. 0.13 Max. 0.2 0.6 mm H C B A D E G I F 8 MAR-09-2006