QW0905-LPD3330

PHOTO DIODE SILICON PIN LED LAMPS Package Dimension LPD3330 SERIES Description The LPD3330 series are silicon planar P/N photodiodes incorporated in plastic package that simultaneously serve as filter and are also Transparent for infrared emission their terminals are soldering tabs arranged in 2.54mm center to center spacing due to their design the diodes can vertically be assembled on pc boards arrays can be realized by multiple arrangement versatile photodetectors are suitable for diodes as well as voltaic cell operation the signal noise ratio is particularly favorable even at low illuminance the P/N photodiode are outstanding for low junction capacitance high cut-off frequency and fast switching times. They are particularly suitable for IR sound transmission and remote control the cathode of LPD3330 photodiode is marked by a stamping on the package edge 5.0 5.9 7.6 8.6 1.5MAX □0.5 TYP 25.0MIN 2.54TYP 1.0MIN NOTE:1.All dimension are In millimeters tolerance Is ±0.25 unless otherwise noted 2.Specifications are subject to change without notice •MAXIMUM RATINGS (TA=25℃) Characteristic Reverse Break Down Voltage Power Dissipation Operating Temperature Storage Temperature Symbol VBR PD Topr Tstg Rating 30 150 nit V mW -30 ﹣ +60 -40 ﹣ +60 ℃ ℃ • ELECTRICAL CHARACTERISTICS AT (TA=℃) Characteristic Dark Current Short Circuit Current Symbol ID Isc Test Condition VR=10V Ee=0mW/c ㎡ VR=5V λP=940nm Ee=0.5mW/c ㎡ Min － 1.5 Typ 1.0 2.0 Max 30 － Unit nA uA Open Circuit Voltage Total Capacitance Peak Wavelength of Max Sensitivity Rise Time,Fall Time DOC.NO:QW0905-LPD3330 Voc CT λP=940nm Ee=0.5mW/c ㎡ VR=3V f=1MHZ Ee=0mW/c ㎡ _ － － 350 20 940 50 － － － － mV pF nm ns λsmax tr,tf VR=10V RL=1KΩ REV:B － Date:17 - Aug - 2005