RLT1060-100GS

ROITHNER LASERTECHNIK SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 office@roithner-laser.com www.roithner-laser.com RLT1060-100GS TECHNICAL DATA High Power Infrared Laser Diode Lasing mode structure: single mode Lasing wavelength: typ. 1060 nm Optical power: 100 mW Package: 9 mm (SOT-148) PIN CONNECTION: 1) Photodiode cathode 2) Laser diode cathode and photodiode anode 3) Laser diode anode LASERDIODE MUST BE COOLED! NOTE! Absolute Maximum Ratings (Tc = 25°C) CHARACTERISTIC SYMBOL Optical Output Power Po LD Reverse Voltage VR(LD) PD Reverse Voltage VR(PD) Operating Temperature TC Storage Temperature TSTG RATING 120 1.5 10 -20 .. +40 -40 .. +70 UNIT mW V V °C °C Optical-Electrical Characteristics (Tc = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN Emitting Aperture A cw Optical Output Power Po single mode Threshold Current Ith cw 25 Operation Current Iop Po = 100 mW 220 Forward Voltage Uf Po = 100 mW Lasing Wavelength Po = 100 mW 1062 λp Spectral Width FWHM Po = 100 mW ∆λ Beam Divergence Po = 100 mW θ// Beam Divergence Po = 100 mW θ⊥ Monitor Current Im Po = 100 mW 0.9 TYP 1x5 100 30 250 1.8 1064 0.2 25 40 1.0 MAX 35 280 1.9 1067 0.3 1.1 UNIT µm² mW mA mA V nm nm ° ° mA