RMSW220D

SPDT DC to 40 GHz, RF – MEMS FEATURES Drain 1 Gate 1 Drain 2 Drain Source ■ ■ ■ ■ ■ High Isolation (20 dB typical @10 GHz) Low Insertion Loss (0.4 dB typical @10 GHz) Typical On Resistance < 3.0 Ω Hermetically Sealed Gate 2 Long Life (>1011 cycles) Electrostatic Actuation, High Off Resistance (>1 GΩ), Fast Switching (5 µs), Current Handling (400 mA) ±100V Signal Range, Near Zero Harmonic Distortion, No Quiescent Power Dissipation RF Input Parameters Frequency Insertion Loss Isolation Return Loss Input IP3 (Two-tone inputs 10 GHz and 10.001 GHz @ 27 dBm) RF Power Rating Active Life Cycle, (cold-Switched) 2 GHz < 0.3 dB > 32 dB < -20 dB 5 GHz RMSW 220D™ DESCRIPTION The RMSW220D™ is a Single Pole Double Throw (SPDT) Reflective RF Switch utilizing Radant MEMS Inc. recent breakthrough technology that delivers high-linearity, highisolation and low-insertion loss in a wafer-scale package. This device is ideally suited for use in many applications such as wireless (i.e. handsets, WLAN, broadband wireless access, GPS receivers), RF and Microwave Multi-throw switches, Radar Beam Steering Antennas, Phase shifters, and RF Test Equipment. Functional Block Diagram 10 GHz < 0.5 dB > 20 dB < -19 dB > 65 dBm 30 dBm 1011 25 GHz < 0.6 dB > 17 dB < -18 dB 35 GHz < 0.8 dB > 13 dB < -16 dB < 0.4 dB > 25 dB < -20 dB Notes: Product performance specifications and switch operation are for cold switching only. Hot switching with RF input power greater than –10 dBm can degrade lifetime of switch. DC Input Parameters Actuation Voltage, typ. Actuation Power Consumption Switch Current, Max. (Cold) 90 2µW @ 1 kHz switching rate 250 mA 50 mA 5 µs - 40 ̊C to 85 ̊C - 55 ̊C to 150 ̊C Source Drain Gate Drain Gate Switch Current, Max. (Hot) Switching Time, Max. (10kHz, Varies with Control Voltage) Operating Temperatures Storage Temperatures 255 Hudson Road, Stow, MA01775 ● Tel: 978-562-3866 ● Fax: 978-562-6277 ● Email: sales@radantmems.com SPDT DC to 40 GHz, RF – MEMS Typical Performance dB -10 -15 -20 2 4 3 5 6 7 S21 - rf1 S21 - rf2 S11 - rf1 S11 - rf2 8 dB 5 0 -5 -10 4 1 2 3 dB S21 - rf1 0.2 0 -0.2 -0.4 1 2 S21 - rf2 S11 - rf1 S11 - rf2 dB 5 0 1 2 3 4 8 2 GHz -34.33 dB 5 GHz -26.69 dB 10 GHz -19.96 dB Insertion Loss 2 GHz -0.29 dB 5 GHz -0.33 dB 10 GHz -0.36 dB 15 GHz -0.40 dB 20 GHz -0.39 dB 25 GHz -0.43 dB 30 GHz -0.65 dB 35 GHz -0.80 dB 3 4 5 6 7 -5 -10 Return Loss -15 -20 -25 -30 -35 -40 -45 -25 Isolation -30 -35 -40 -45 -50 -55 -60 Start: 50 MHz Stop: 40 GHz 1 Return Loss -15 -20 -25 -30 -35 -40 -45 15 GHz -16.90 dB 20 GHz -17.20 dB 25 GHz -19.25 dB 30 GHz -16.62 dB 35 GHz -13.27 dB -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 Start: 50 MHz 5 6 7 8 5 6 7 8 Stop: 40 GHz Isolation *Measurement results include the effects of two 1 mil diameter bond wires on each RF pad. Insertion Loss Handling Procedures The following precautions should be observed to avoid damage: Static sensitivity — RF MEMS switches integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when handling these devices. Maximum Rating — The absolute maximum input power is 2 watts. Nominal Device Dimensions 100 µm RMI Bond Pad 650 µm 1.371.45 mm mm 300 300 µm 200 µm 250 µm Gold metal on backside 300 µm 1.42 mm 1.45 100 µm 255 Hudson Road, Stow, MA01775 ● Tel: 978-562-3866 ● Fax: 978-562-6277 ● Email: sales@radantmems.com