SBR2040CT SBR2040CTF SBR2040CTI SBR2040CTB
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Values Characteristics
IF(AV) Rectangular Waveform VRRM VF@10A, Tj=125 C Tj (operating/storage)
O
Units
A V V, typ O C
20 40 0.43 -65 to 150
Device optimized for low forward voltage drop to maximize efficiency in Power Supply applications
ELECTRICAL: * Low Forward Voltage Drop * Reliable High Temperature Operation * Super Barrier Design * Softest, fast switching capability * 150OC Operating Junction Temperature
MECHANICAL: * Molded Plastic TO-220AB, TO-262, TO-263, and ITO-220 packages
Case Styles SBR2040CT SBR2040CTF SBR2040CTI SBR2040CTB
2
Anode
1
Common Cathode
3
Anode
Anode
1
Common Cathode
2
2 3
Anode Anode
2 3
Anode Anode
1
Common Cathode
1
Common Cathode
3
Anode
TO-220AB
ITO-220
TO-262
TO-263
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SBR2040CT SBR2040CTF SBR2040CTI SBR2040CTB
Maximum Ratings and Electrical Characteristics (at 25OC unless otherwise specified)
SYMBOL DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Reverse Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle Peak Forward Surge Current - 1/2 60hz Peak Repetitive Reverse Surge Current (2uS-1Khz) Instantaneous Forward Voltage (per leg) IF = 10A; TJ = 25OC IF = 10A; TJ= 125OC Maximum Instantaneous Reverse Current at Rated VRM TJ = 25OC TJ = 125OC Maximum Rate of Voltage Change (at Rated VR) Maximum Thermal Resistance JC (per leg) Package = TO-220AB, TO-262, & TO-263 Package = ITO-220 Operating and Storage Junction Temperature
NOTE: Dice are available for customer applications. * Pulse width < 300 uS, Duty cycle < 2%
UNITS 40 Volts
VRM VRWM VRRM IO IFSM IRRM
20 120 2
Amps Amps Amps
VF
Typ ----Typ ----10,000
Max 0.53 0.48 Max 0.5 100
Volts
IR *
mA mA V/uS
dv/dt
RθJC TJ
2 4 -65 to +150
O
C/W
O
C
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SBR2040CT SBR2040CTF SBR2040CTI SBR2040CTB
100
Tj=150C
100 If, Instantaneous Forward Current (Amps)
Ir, Reverse Current (mA)
Tj=125C
10
10
Tj=150C Tj=125C
Tj=75C
1
1
Tj=75C Tj=25C
Tj=25C
0.1 0 10 20 30 40
0.1 0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
Vr, Reverse Voltage (Volts)
Vf, Instantaneous Forward Voltage (Volts)
Figure 1: Typical Reverse Current
Figure 2: Typical Forward Voltage
10 If, Average Forward Current (Amps)
5
0 0 25 50 75 100 125 150 Tc, Case Temp (C)
Figure 3: Current Derating, Case
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part..
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