SM5112-030-A

SILICON MICROSTRUCTURES INCORPORATED • • SM5112 Harsh Environment Absolute Silicon Pressure Die OEM ABSOLUTE SILICON PRESSURE SENSOR DIE FOR HARSH ENVIRONMENTS REAR ENTRY FOR PROTECTION OF THE PIEZORESISTIVE BRIDGE NETWORK – ONLY SILICON AND GLASS EXPOSED DESCRIPTION The SM5112 is a silicon micro-machined, piezoresistive pressure-sensing chip. The SM5112 is designed for harsh environments where absolute pressure needs to be accurately measured. These devices are available in full-scale ranges from 15 to 300 psi and are ideal for OEM and high volume applications. Provided in die form, these sensors can be mounted on ceramic or PC board substrates as part of an OEM system. They also may be packaged into proprietary, or application specific sensor lines. Die are probed, inked and diced, and shipped on tape. Custom pressure ranges available in highvolume applications. FEATURES • • • • • High Volume, Low Cost Absolute Version Constant Current or Constant Voltage Drive Millivolt Output 15, 30, 60, 150 and 300 PSI Ranges Available APPLICATIONS • • • • • • Altimeters Tire Gauges Medical Instrumentation Industrial Sensors Diving Modules Home Appliances Rev 1.1 10_04  2003 Silicon Microstructures, Inc. ♦ 1701 McCarthy Blvd. ♦ Milpitas, CA 95035 USA Tel: 408-577-0100 ♦ Fax: 408-577-0123 ♦ sales@ si-micro.com ♦ www.si-micro.com SM5112 CHARACTERISTICS FOR SM5112 - SPECIFICATIONS All parameters are measured at 5.000V supply at room temperature, unless otherwise specified. Min Excitation Voltage Excitation Current Span (FS Range) 15 psi 30 psi 60 psi 150 psi 300 psi Offset TC Span TC Offset TC Resistance Linearity Bridge Impedance Proof Pressure Burst Pressure Operating Temperature Storage Temperature 0 0 75 85 85 100 100 -50 -24 -15 17 -0.3 4.0 3X 5X -40 -55 Typ 5 1.5 125 125 125 145 145 0 -19 2 26 5.0 Max 10 3 150 150 150 195 195 50 -15.5 +15 31 0.3 6.0 Units V mA mV mV mV mV mV mV %FS/100 oC %FS/100 oC %/100 oC %FS kohm Rated FS Rated FS o C o C Notes 1 2 3 4 125 150 Notes: 1. Bridge may be driven with positive or negative voltage as long as Vsub is not connected. Positive output for positive pressure applied to bottom side of die when bridge is driven with positive voltage. 2. Measured at 5V constant voltage excitation. 3. Measured from 0 to 70 C 4. Defined as best straight line. Pin 1 2 3 4 5 6 7 Function Subs N/C Vext+ Sig+ Gnd SigN/C Pin-out from Left to Right in accompanying figure. Cross-section of SM5112 Back port hole is 0.8 mm. Silicon is 0.4 mm; top and bottom glass is 0.5 mm Top view of SM5112 die (2 mm square as sawn) ORDERING INFORMATION: Covered under USA Mask-Copyright and may be covered under US Patent Numbers 5,812,047 and 6,089,099 Pressure Ranges PSI 5112 15 015 30 030 60 060 150 150 300 300 Custom ranges available in high volumes Notice: Silicon Microstructures, Inc. reserves the right to make changes to the product contained in this publication. Silicon Microstructures, Inc. assumes no responsibility for the use of any circuits described herein, conveys no license under any patent or other right, and makes no representation that the circuits are free of patent infringement. While the information in this publication has been checked, no responsibility, however, is assumed for inaccuracies. Silicon Microstructures, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of a life-support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications. Rev 1.1 10_04  2003 Silicon Microstructures, Inc. ♦ 1701 McCarthy Blvd. ♦ Milpitas, CA 95035 USA Tel: 408-577-0100 ♦ Fax: 408-577-0123 ♦ sales@ si-micro.com ♦ www.si-micro.com