TC1101

TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • • • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga P1dB GL IDSS gm VP BVDGO Rth Conditions Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz Output Power at 1dB Gain Compression Point , f = 12GHz VDS = 4 V, IDS = 25 mA Linear Power Gain, f = 12GHz VDS = 4 V, IDS = 25 mA Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA Drain-Gate Breakdown Voltage at IDGO =0.08 mA Thermal Resistance MIN TYP MAX UNIT 10 17 12 0.5 12 18 14 40 55 -1.0 12 90 0.7 dB dB dBm dB mA mS Volts Volts °C/W 9 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 3 TC1101 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 7.0 V -3.0 V IDSS 160 µA 14 dBm 150 mW 175 °C - 65 °C to +175 °C TYPICAL NOISE PARAMETERS (TA=25 °C) VDS = 2 V, IDS = 10 mA Frequency (GHz) 2 4 6 8 10 12 14 16 18 NFopt (dB) 0.38 0.40 0.42 0.45 0.50 0.55 0.64 0.78 0.95 GA (dB) 19.8 17.5 15.6 13.9 13.1 12.4 11.7 11.1 10.6 Γopt MAG ANG 0.99 4 0.90 9 0.82 18 0.76 29 0.69 43 0.63 55 0.56 65 0.45 76 0.34 90 Rn/50 1.52 1.05 0.77 0.61 0.51 0.44 0.37 0.30 0.24 CHIP DIMENSIONS D 250 ± 12 S G S Units: Micrometers Chip Thickness: 100 Gate Pad: 55 x 50 Drain Pad: 55 x 50 Source Pad: 55 x 60 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 4 TRANSCOM TC1101 TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 2 V, IDS = 10 mA 1.0 6 0. 2. 0 60 Swp Max 18GHz 0 3. 0 4. 0 5. 10.0 0.8 Mag Max 0.15 5 13 Swp Max 18 GHz 45 90 S11 75 105 0 12 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 -0 .6 .0 -2 -1 35 .4 -0 -0.8 -1.0 Swp Min 2GHz -1 20 -105 1.0 6 0. 60 45 2. 0 Mag Max 5 5 13 15 0 Swp Max 18 GHz 0. 4 90 0.8 75 15 165 -180 0 -165 50 -1 S21 -3 0 -1 35 -1 20 -105 -0 .6 -1.0 1 Per Div Swp Min 2 GHz -0.8 .0 -2 .4 -0 FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 MAG 0.9879 0.9740 0.9564 0.9364 0.9152 0.8939 0.8732 0.8536 0.8354 0.8188 0.8037 0.7901 0.7780 0.7671 0.7575 0.7491 0.7416 ANG -20.21 -29.96 -39.31 -48.20 -56.56 -64.40 -71.72 -78.52 -84.84 -90.72 -96.18 -101.25 -105.98 -110.39 -114.51 -118.37 -121.99 MAG 4.3485 4.2452 4.1126 3.9594 3.7943 3.6242 3.4546 3.2894 3.1312 2.9813 2.8406 2.7092 2.5868 2.4731 2.3676 2.2697 2.1788 S21 ANG 162.66 154.28 146.20 138.48 131.15 124.22 117.66 111.45 105.57 99.99 94.68 89.60 84.74 80.07 75.57 71.21 66.99 MAG 0.0296 0.0434 0.0560 0.0674 0.0774 0.0861 0.0937 0.1002 0.1058 0.1106 0.1148 0.1183 0.1214 0.1241 0.1264 0.1284 0.1302 S12 ANG 77.08 70.91 65.04 59.53 54.40 49.66 45.29 41.27 37.57 34.16 31.00 28.08 25.36 22.82 20.44 18.20 16.08 MAG 0.7367 0.7235 0.7068 0.6877 0.6676 0.6472 0.6276 0.6090 0.5919 0.5764 0.5627 0.5506 0.5402 0.5313 0.5239 0.5179 0.5132 • The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 5 -3 .0 -4 . -5. 0 0 2 -0. Swp Min 2GHz -10.0 -15 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0.2 -3 .0 -4 . -5. 0 0 2 -0. -10.0 0. 4 15 0 165 30 15 0 0.2 105 0 12 0 -6 10.0 -180 -15 -165 S12 5 -4 50 -1 0 -6 -3 0 -75 0.075 Per Div Swp Min 2 GHz -90 Swp Max 18GHz 0 3. 0 4. 0 5. 30 S22 10.0 5 -4 -75 -90 S22 ANG -11.76 -17.37 -22.68 -27.66 -32.28 -36.54 -40.46 -44.06 -47.37 -50.43 -53.28 -55.93 -58.41 -60.76 -62.99 -65.12 -67.16 TC1101 TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 4 V, IDS = 25 mA 1.0 6 0. 2. 0 Swp Max 18GHz 0 3. 0 4. 0 5. 60 Mag Max 0.1 5 13 Swp Max 18 GHz 45 0.8 90 S11 75 105 0 12 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 10.0 0 -0 .6 .0 -2 -1 35 .4 -0 -0.8 -1 20 -1.0 -105 1.0 60 6 0. 45 2. 0 Mag Max 6 5 13 Swp Max 18 GHz 0. 4 75 0.8 90 15 165 0 -180 -15 -165 50 -1 -3 0 -1 35 -1 20 -0 .6 -105 -0.8 -1.0 .0 -2 .4 -0 2 Per Div Swp Min 2 GHz FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 MAG 0.9861 0.9704 0.9507 0.9288 0.9059 0.8834 0.8618 0.8418 0.8234 0.8068 0.7919 0.7786 0.7668 0.7564 0.7471 0.7389 0.7316 ANG -22.03 -32.59 -42.66 -52.16 -61.05 -69.32 -76.97 -84.05 -90.59 -96.63 -102.23 -107.40 -112.21 -116.69 -120.86 -124.76 -128.41 MAG 5.2729 5.1264 4.9406 4.7291 4.5045 4.2765 4.0524 3.8370 3.6330 3.4418 3.2639 3.0990 2.9466 2.8058 2.6758 2.5557 2.4446 S21 ANG 161.97 153.31 145.03 137.18 129.78 122.83 116.31 110.19 104.41 98.96 93.79 88.86 84.16 79.65 75.31 71.12 67.06 MAG 0.0218 0.0318 0.0408 0.0488 0.0558 0.0618 0.0669 0.0712 0.0749 0.0781 0.0807 0.0830 0.0850 0.0867 0.0882 0.0895 0.0906 S12 ANG 76.68 70.37 64.44 58.94 53.89 49.28 45.10 41.30 37.85 34.72 31.86 29.24 26.83 24.60 22.54 20.62 18.82 MAG 0.7718 0.7586 0.7422 0.7239 0.7050 0.6865 0.6690 0.6530 0.6386 0.6260 0.6150 0.6057 0.5978 0.5913 0.5861 0.5821 0.5790 • The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 6 -3 .0 -4 . -5. 0 0 S21 5 -4 2 -0. Swp Min 2GHz -10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0.2 15 0 -3 .0 -4 . -5. 0 0 2 -0. Swp Min 2GHz -10.0 0. 4 15 0 165 30 15 0 0.2 105 0 12 0 -6 10.0 -180 -15 -165 S12 5 -4 50 -1 0 -6 -3 0 -75 0.01 Per Div Swp Min 2 GHz -90 Swp Max 18GHz 0 3. 0 4. 0 5. 30 S22 10.0 -75 -90 S22 ANG -10.24 -15.08 -19.62 -23.82 -27.69 -31.23 -34.49 -37.49 -40.28 -42.90 -45.37 -47.73 -49.99 -52.18 -54.32 -56.41 -58.46 TRANSCOM TC1101 SMALL SIGNAL MODEL, VDS = 2 V, IDS = 10 mA SCHEMATIC Lg Rg Cgs Ri T Cgd Gm Cds Rds Rd Ld PARAMETERS Parameters Lg Rg Cgs Ri Cgd Gm T 0.04708 nH Parameters Rs Cds Rd Ld 1.29 Ohm 0.001 nH 0.0684 pF 321.5 Ohm 1.525 Ohm 0.0379 nH 1.46 Ohm Ls 0.207 pF 3.68 Ohm Rds 0.0269 pF 54.8 mS 3.34 psec Rs Ls SMALL SIGNAL MODEL, VDS = 4 V, IDS = 25 mA SCHEMATIC Lg Rg Cgs Ri T Cgd Gm Cds Rds Rd Ld PARAMETERS Parameters Lg Rg Cgs Ri Cgd Gm T 0.04708 nH Parameters Rs Cds Rd Ld 1.25 Ohm 0.001 nH 0.0666 pF 377.8 Ohm 1.525 Ohm 0.0379 nH 1.46 Ohm Ls 0.254 pF 5.91 Ohm Rds 0.0192 pF 66.0 mS 3.64 psec Rs Ls TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 7 TC1101 CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 8