TC1202

TRANSCOM TC1202 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 300 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1202 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga IDSS gm VP BVDGO Rth CONDITIONS Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.6 mA Drain-Gate Breakdown Voltage at IDGO =0.15 mA Thermal Resistance 11 MIN TYP 0.5 12 90 100 -1.0 8 43 MAX 0.7 UNIT dB dB mA mS Volts Volts °C/W 5 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 19 TC1202 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Gate Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 5V -3.0 V IDSS TYPICAL NOISE PARAMETERS (TA=25 °C) VDS = 4 V, IDS = 25 mA Frequency NFopt (GHz) (dB) 2 0.31 4 0.37 6 0.41 8 0.47 10 0.52 12 0.58 14 0.71 16 0.88 18 1.04 GA (dB) 20.6 17.2 14.8 13.1 12.1 11.4 10.8 10.4 9.9 Γopt MAG 0.90 0.81 0.74 0.69 0.64 0.58 0.55 0.52 0.51 ANG 10 20 37 57 77 95 113 130 151 Rn/50 0.64 0.45 0.35 0.29 0.24 0.20 0.16 0.11 0.08 300 µA 17 dBm 300 mW 175 °C - 65 °C to +175 °C CHIP DIMENSIONS 280 ± 12 D S G S 290 ± 12 Units: Micrometers Chip Thickness: 100 Gate Pad: 55 x 60 Drain Pad: 55 x 60 Source Pad: 55 x 169 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science- Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 20 TRANSCOM TC1202 TYPICAL SCATTERING PARAMETERS (TA=25 °C) VDS = 4 V, IDS = 25 mA Swp Max 18GHz 0 3. 0 4. 0 5. 10.0 6 0. 2. 0 60 Mag Max 0.1 5 13 Swp Max 18 GHz 45 1.0 0.8 90 S11 75 105 0 12 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 -0 .6 .0 -2 -1 35 .4 -0 -0.8 -1 20 -1.0 -105 6 0. 60 Mag Max 8 5 13 15 0 Swp Max 18 GHz 45 1.0 90 0.8 75 2. 0 30 15 165 0 -180 -165 50 -1 S21 -3 0 -1 35 -1 20 -105 -0 .6 -1.0 2 Per Div Swp Min 2 GHz -0.8 .0 -2 .4 -0 FREQUENCY (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 MAG 0.9823 0.9641 0.9438 0.9239 0.9058 0.8900 0.8766 0.8654 0.8561 0.8485 0.8423 0.8371 0.8329 0.8295 0.8267 0.8245 0.8227 ANG -33.16 -48.24 -61.87 -73.98 -84.62 -93.94 -102.10 -109.26 -115.58 -121.18 -126.18 -130.67 -134.73 -138.41 -141.77 -144.86 -147.71 MAG 6.5659 6.2124 5.8010 5.3750 4.9624 4.5784 4.2290 3.9151 3.6347 3.3847 3.1617 2.9623 2.7836 2.6227 2.4775 2.3458 2.2260 S21 ANG 156.94 146.39 136.77 128.09 120.28 113.25 106.86 101.02 95.63 90.61 85.91 81.47 77.25 73.22 69.34 65.61 62.00 MAG 0.0318 0.0451 0.0562 0.0650 0.0720 0.0775 0.0818 0.0852 0.0878 0.0899 0.0916 0.0929 0.0940 0.0948 0.0955 0.0960 0.0964 S12 ANG 70.67 61.99 54.23 47.41 41.46 36.28 31.75 27.76 24.22 21.04 18.18 15.57 13.18 10.97 8.92 7.00 5.19 MAG 0.6019 0.5794 0.5540 0.5288 0.5056 0.4855 0.4687 0.4551 0.4445 0.4367 0.4311 0.4276 0.4259 0.4256 0.4267 0.4289 0.4321 • The data does not include gate, drain and source bond wires. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 21 -3 .0 -4 . -5. 0 0 2 -0. Swp Min 2GHz -10.0 -15 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0. 4 0.2 -3 .0 -4 . -5. 0 0 2 -0. Swp Min 2GHz -10.0 0. 4 15 0 165 30 15 0 0.2 105 0 12 0 -6 10.0 -180 -15 -165 S12 5 -4 50 -1 0 -6 -3 0 -75 0.01 Per Div Swp Min 2 GHz -90 Swp Max 18GHz 0 3. 0 4. 0 5. S22 10.0 5 -4 -75 -90 S22 ANG -18.38 -26.63 -33.99 -40.46 -46.12 -51.07 -55.44 -59.33 -62.83 -66.01 -68.94 -71.66 -74.21 -76.61 -78.89 -81.07 -83.16 TC1202 SMALL SIGNAL MODEL, VDS = 4 V, IDS = 25 mA SCHEMATIC Lg Rg Cgs Ri T Cgd Gm Cds Rds Rd Ld PARAMETERS Parameters Lg Rg Cgs 0.04473 nH 0.361 pF 0.0310 pF 94.9 mS 2.13 psec Parameters Rs 1.12 Ohm 0.0005 nH 0.0838 pF 193.0 Ohm 0.920 Ohm 0.0242 nH 0.79 Ohm Ls Cds 1.47 Ohm Rds Rd Ld Rs Ls Ri Cgd Gm T CHIP HANDLING DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290°C ± 5°C; Handling Tool: Tweezers; Time: less than 1min. WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil (0.018 to 0.025 mm) gold wire. Stage temperature: 220°C to 250°C; Bond Tip Temperature: 150°C; Bond Force: 20 to 30 gms depending on size of wire and Bond Tip Temperature. HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 22