TM50S116T

晶揚科技股份有限公司 Taiwan Micropaq Corporation 承認書 SPECIFICATION FOR APPROVAL TM50S116T-7G 新竹縣新竹工業區文化路 4 號 No.4 Wenhua Rd. HsinChu Industrial Park HuKou , Taiwan, R.O.C. TEL：886-3-597-9402 ˙ FAX：886-3-597-0775 http://www.tmc.com.tw TMC SDRAM Description TM50S116T-7G The TM50S116T is organized as 2-bank x 524288-word x 16-bit(1Mx16), fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Features Package 400-mil 50-pin TSOP(II) JEDEC PC133/PC100 compatible Single 3.3V Power Supply LVTTL Signal Compatible Programmable - CAS Latency (3 or 2 clocks) - Burst Length (1,2,4,8 & full page) - Burst type (Sequential & Interleave) Burst read/write and burst read/single write operations capability Byte control(DQML and DQMU) Auto and Self Refresh 64ms refresh period (4K cycles) 11-Row x 8-Column organization 2-Bank operation controlled by BA0 Pin33 and 37 are “No Connected” Fully synchronous operation referenced to clock rising edge Frequency vs. AC Parameter Symbol tCK fCK tAC trcd Parameter Min. clock cycle time @CL=3 Max. operating frequency @CL=3 Max. access time from clock @CL=3 Min. row to column delay - 6G 6 166 5.0 18 - 7G 7 143 5.4 18 - 75G 7.5 133 5.4 20 Unit ns Mhz ns ns For reference only. 2 TMC Rev:1.0 TMC Pin Description Pin Name CLK CKE /CS /RAS /CAS /WE DQ0~DQ15 Function Master Clock Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Data I/O TM50S116T-7G SDRAM Pin Name DQML/DQMU A0-10 BA0 Vdd VddQ Vss/VssQ NC Function Output Disable(Write Mask) Address Input Bank Address Power Supply Power Supply for Output Ground No Connection For reference only. 3 TMC Rev:1.0 TMC Pin Function TM50S116T-7G SDRAM Pin Function CLK Active on the positive going edge to sample all inputs. /CS Chip select Disables or enables device operation by masking or enabling all inputs except CLK,CKE and DQML/DQMU. CKE Clock enable Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. A0~A10 Address input Row/column addresses are multiplexed on the same pins. Row address:A0~A10, Column address:A0~A7 BA0 Bank address Selects bank to be activated during row address latch time. Selects bank for read/write during column address latch time. /RAS Row address strobe Latches row addresses on the positive going edge of the CLK with /RAS low. Enables rows access & pre-charge. /CAS Column address strobe Latches column addresses on the positive going edge of the CLK with /CAS low. Enables column access. /WE Write enable Enables write operation and row pre-charge. Latches data in starting from /CAS,/WE active. DQMU/DQM Data I/O mask Makes data output Hi-Z, tSHZ after the clock and L masks the output. Blocks data input when (Byte controll) DQML/DQMU active. DQ0~15 Data input/output Data inputs/outputs are multiplexed on the same pins. Vdd/Vss Power supply/ground Power and ground for the input buffers and the core logic. VddQ/VssQ Data output power / Isolated power supply and ground for the output ground buffers to provide improved noise immunity. NC/RFU No connection / This pin is recommended to be left no connection reserved for future use on the device. Pin Name System clock For reference only. 4 TMC Rev:1.0 TMC Absolute maximum ratings Parameter Voltage on any pin relative to Vss Voltage supply relative to Vss(VssQ) Operating temperature Power dissipation Output Shorted current TM50S116T-7G SDRAM Symbol VIN, VOUT Vdd,VddQ Topr PD IOS Ratings -0.5 to 4.6 -0.5 to 4.6 0 to +70 1 50 Unit V V ℃ W mA DC OPERATING CONDITIONS Recommended operating conditions(Referenced to Vss=0V,TA=0℃ to 70℃) Parameter Power Supply Voltage Input Logic High Voltage Input Logic Low Voltage Output Logic High Voltage Output Logic Low Voltage Input/Output Leakage Current Symbol Vdd, VddQ VIH VIL VOH VOL IIL, IOL Min. 3.0 2.0 -0.3 2.4 -5 Typ. 3.3 Max. 3.6 Vdd +0.3 0.8 0.4 5 Unit V V V V V μA DC Characteristics (Recommended operating condition TA = 0℃ to 70℃, unless otherwise noted.) Parameter Operating Current (One bank active) Pre-charge Standby Current in Power Down Mode Pre-charge Standby Current in Non-Power Down Mode Symbol ICC1 ICC2P ICC2PS ICC2N ICC2NS Test Conditions Burst length=1, CL=3, tRC = tRC(min), tCK = tCK(min) CKE=VIL(max), tCK = 15ns CKE & CLK=VIL(max) CKE>=VIH(min),/CS> = VIH (min) , tCK = 15ns CKE>=VIH(min),/CS> = VIH (min), CLK