TS1M3660

厂商：
ETC2
封装：
描述：
TS1M3660 - PcRam - List of Unclassifed Manufacturers

数据手册：

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数据手册
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TS1M3660 数据手册

PcRam Description The TS1M3660 is a 1M by 36-bit dynamic RAM module with 2 pcs of 1Mx16 DRAMs and 1 pcs of 1Mx4 quad CAS DRAMs assembled on the printed circuit board. The TS1M3660 is optimized for application to systems which require high density and large capacity along with compact sizing. TS1M3660 Features • • • • • • 1,048,576-word by 36-bit organization. Fast Page Mode Operation. Single +5.0V ± 10% power supply. 512 cycles refresh. Lower power consumption. CAS before RAS refresh, RAS only refresh, Hidden refresh, Fast Page Mode, Read_Modify_Write capability. Placement TS1M3660 Access time from /RAS tRAC Access time from /CAS tCAC Random read/write cycle time tRC Page mode cycle time tPC A B C 60ns 15ns 110ns 40ns Dimensions Side A B C D Millimeters 107.95 ± 0.400 6.35 3.38 2.03 25.40 ± 0.200 10.16 6.35 1.27 ± 0.100 Inches 4.520 ± 0.015 0.250 0.133 0.080 1.000 ± 0.008 0.400 0.250 0.050 ± 0.004 D C B E F G G F E H H 1P3660R1.DOC Transcend Information Inc. TS1M3660-- Block Diagram A0-A9 D0-D35 /WE /RAS0 /CAS0 /CAS1 /RAS2 /CAS2 /CAS3 A0-A9 D0-D7 D8-D15 /WE /RAS0 /CAS0 /CAS1 1Mx16 DRAM A0-A9 D18-D25 D27-D34 /WE /RAS2 /CAS2 /CAS3 1Mx16 DRAM A0-A9 /WE /RAS0 /CAS0 /CAS1 /CAS2 /CAS3 D8 D17 D26 D35 1Mx4 Quad CAS Pinouts Pin No 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Pin Name Vss D0 D18 D1 D19 D2 D20 D3 D21 Vcc NC A0 A1 A2 A3 A4 A5 A6 NC D4 D22 D5 D23 D6 Pin No 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Pin Name D24 D7 D25 A7 NC Vcc A8 A9 NC /RAS2 D26 D8 D17 D35 Vss /CAS0 /CAS2 /CAS3 /CAS1 /RAS0 NC NC /WE NC Pin No 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Pin Name D9 D27 D10 D28 D11 D29 D12 D30 D13 D31 Vcc D32 D14 D33 D15 D34 D16 NC PD1 PD2 PD3 PD4 NC Vss Pin Identification Symbol A0 ~ A9 D0 ~ D35 /RAS0, /RAS2 /CAS0 ~ /CAS3 /WE Vcc Vss NC PD1 ~ PD4 Function Address inputs Common data inputs/outputs Row address strobes Column address strobes Write enable +5.0 Volt power supply Ground No connection Presence detection pin This technical information is based on industry standard data and tests believed to be reliable. However , Transcend makes no warranties, either expressed or implied, as to its accuracy and assumes no liability in connection with the use of this product. Transcend reserves the right to make changes in specifications at any time without prior notice.

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TS1M3660

1. 物料型号： - 型号：TS1M3660

2. 器件简介： - TS1M3660是一个1M x 36位的动态RAM模块，由2片1Mx16的DRAM和1片1Mx4的四CAS DRAM组装在印刷电路板上。 - 特点包括：1,048,576字的36位组织、快速页面模式操作、单+5.0V±10%电源供电、512周期刷新。

3. 引脚分配： - 引脚1至引脚72，包括地（Vss）、数据输入输出（DO-D35）、地址输入（A0-A9）、行地址脉冲（/RAS0, /RAS2）、列地址脉冲（/CAS0-/CAS3）、写使能（/WE）、电源（Vcc）和无连接（NC）等。

4. 参数特性： - 从/RAS的访问时间（tRAC）：60ns - 从/CAS的访问时间（tCAC）：15ns - 随机读/写周期时间（tRC）：110ns - 页面模式周期时间（tPC）：40ns

5. 功能详解和应用信息： - TS1M3660适用于需要高密度和大容量以及紧凑尺寸的系统。 - 低功耗、CAS前RAS刷新、RAS仅刷新、隐藏刷新、快速页面模式、读-修改-写能力。

6. 封装信息： - 尺寸包括A至H侧，具体尺寸从1.27±0.100英寸（0.050±0.004）到107.95±0.400毫米（4.520±0.015）不等。

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