TW30DY2

Ultraviolet selective thin film sensor TW30DY2 Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area No focusing lens needed, therefore large usable incident angle Designed to operate in photovoltaic mode TO-39 metal package Maximum Ratings Parameter Operating temperature range Reverse voltage Forward current Total power dissipation at 25°C Symbol Topt VRmax IFmax Ptot Value -20 ... +80 3 5 5 Unit °C V mA mW Rev. 1.4 Page 1 [3] Ultraviolet selective thin film sensor TW30DY2 General Characteristics (Ta = 25 °C) Parameter Active area Active area dimensions Max. viewing angle Shunt resistance (dark) Dark current at 10mV reverse bias Open circuit voltage (200µW/cm2, λ=300nm) Short circuit current (200µW/cm2, λ=300nm) Breakdown voltage (dark) Symbol A LxW α Rs Value 15,66 5.4 x 2.9 app. 60 100 Unit mm2 mm2 degree MΩ Id 100 pA V0 >200 mV I0 564 nA VBR >3 V Spectral Characteristics (Ta = 25 °C) P arameter Max. spectral sensitivity Wavelength of max. spectral sensitivity Range of spectral sensitivity (S=0.1*S max ) Visible blindness Symbol S max λ Smax typ. Value 18 300 260-362 Unit mA W nm nm -1 S max S 400 nm 10.000 Rev. 1.4 Page 2 [3] Ultraviolet selective thin film sensor TW30DY2 Spectral Response Pin Layout Rev. 1.4 Page 3 [3]