VP1008B

VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M –100 –80 V(BR)DSS Min (V) rDS(on) Max (W) 5 @ VGS = –10 V 5 @ VGS = –10 V 5 @ VGS = –10 V 5 @ VGS = –10 V 5 @ VGS = –10 V 5 @ VGS = –10 V VGS(th) (V) –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 –2 to –4.5 ID (A) –0.88 –0.28 –0.31 –0.79 –0.28 –0.31 Features D D D D D High-Side Switching Low On-Resistance: 2.5 W Moderate Threshold: –3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF TO-205AD (TO-39) (Case Drain) S 1 Benefits D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer TO-226AA (TO-92) Applications D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-237 (Tab Drain) S 1 S 1 G VP0808B VP1008B D Top View 2 VP0808L VP1008L 3 G 2 VP0808M VP1008M 3 2 G 3 D D Top View Top View Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA RthJC TJ, Tstg VP0808Bb –80 "20 –0.88 –0.53 –3 6.25 2.5 20 VP0808L –80 "30 –0.28 –0.17 –3 0.8 0.32 156 VP0808M –80 "30 –0.31 –0.20 –3 1 0.4 125 VP1008Bb –100 "20 –0.79 –0.53 –3 6.25 2.5 20 VP1008L –100 "30 –0.28 –0.17 –3 0.8 0.32 156 VP1008M –100 "30 –0.31 –0.20 –3 1 0.4 125 Unit V A Power Dissipation Dissipation W _C/W _C Maximum Junction-to-Ambient Maximum Junction-to-Case Operating Junction and Storage Temperature Range –55 to 150 Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70218. Siliconix P-37655—Rev. B, 25-Jul-94 1 VP0808B/L/M, VP1008B/L/M Specificationsa Limits VP0808B/L/M VP1008B/L/M Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Leakage Symbol Test Conditions Typb Min Max Min Max Unit V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = –10 mA VDS = VGS, ID = –1 mA VDS = 0 V, VGS = "20 V TJ = 125_C VDS = –80 V, VGS = 0 V –110 –3.4 –80 –2 –4.5 "100 "500 –10 –500 –100 V –2 –4.5 "100 "500 nA Zero Gate Voltage Drain Current Gate Voltage Drain Current IDSS TJ = 125_C VDS = –100 V, VGS = 0 V TJ = 125_C –10 –500 –2 2.5 4.4 325 0.45 200 –1.1 5 8 200 –1.1 5 8 mA On-State Drain Currentc ID(on) rDS( ) DS(on) gfs gos VDS = –15 V, VGS = –10 V VGS = –10 V, ID = –1 A TJ = 125_C VDS = –10 V, ID = –0.5 A VDS = –7.5 V, ID = –0.1 A A W Drain-Source On-Resistancec On Forward Transconductance c Common Source Output Conductancec mS Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = –25 V, VGS = 0 V V f = 1 MHz 75 40 18 150 60 25 150 60 25 pF Switchingd Turn-On Time Time td(on) tr Turn-Off Time Time td(off) tf Notes a. TA = 25_C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. VDD = –25 V, RL = 47 W ID ^ –0.5 A, VGEN = -10 V -10 RG = 25 W 11 30 20 20 15 40 30 30 15 40 30 30 VPDV10 ns 2 Siliconix P-37655—Rev. B, 25-Jul-94 VP0808B/L/M, VP1008B/L/M Typical Characteristics (25_C Unless Otherwise Noted) Ohmic Region Characteristics –2.0 TJ = 25_C –1.6 I D – Drain Current (A) VGS = –10 V I D – Drain Current (mA) –9 V –8 V –7 V –0.8 –6 V –0.4 –5 V –4 V 0 0 –1 –2 –3 –4 –5 VDS – Drain-to-Source Voltage (V) 0 0 –0.4 –0.8 –1.2 –1.6 –2.0 VDS – Drain-to-Source Voltage (V) –16 –20 TJ = 25_C VGS = –4.0 V Output Characteristics for Low Gate Drive –1.2 –12 –3.8 V –8 –3.6 V –3.4 V –3.2 V –4 –0.5 Transfer Characteristics 7 TJ = –55_C 125_C rDS(on) – On-Resistance ( W ) 6 On-Resistance vs. Gate-to-Source Voltage TJ = 25_C –0.4 I D – Drain Current (A) VDS = –10 V –0.3 25_C I D = 0.1 A 5 4 3 2 1 0.5 A 1.0 A –0.2 –0.1 0 0 –2 –4 –6 –8 –10 VGS – Gate-Source Voltage (V) 0 0 –4 –8 –12 –16 –20 VGS – Gate-Source Voltage (V) 10 rDS(on) – Drain-Source On-Resistance ( W ) On-Resistance vs. Drain Current rDS(on) – Drain-Source On-Resistance (Normalized) 2.00 1.75 1.50 1.25 1.00 0.75 0.50 Normalized On-Resistance vs. Junction Temperature VGS = –10 V ID = 0.5 A 8 6 4 VGS = –10 V 2 0 0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0 ID – Drain Current (A) –50 –10 30 70 110 150 TJ – Junction Temperature (_C) Siliconix P-37655—Rev. B, 25-Jul-94 3 VP0808B/L/M, VP1008B/L/M Typical Characteristics (25_C Unless Otherwise Noted) –10 VDS = –5 V I D – Drain Current (mA) 160 –1 TJ = 150_C 25_C 125_C –0.1 –55_C C – Capacitance (pF) Threshold Region 200 VGS = 0 V f = 1 MHz Capacitance 120 Ciss Coss 40 Crss 80 –0.01 –1.0 0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 –4.5 0 –10 –20 –30 –40 –50 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Gate Charge –15.0 VGS – Gate-to-Source Voltage (V) –12.5 –10.0 VDS = –50 V –7.5 –5.0 –2.5 0 0 100 200 300 400 500 Qg – Total Gate Charge (pC) 1 10 –80 V ID = –0.5 A t – Switching Time (ns) 100 Drive Resistance Effects on Switching tr tf td(off) 10 td(on) VDD = –25 V RL = 50 W VGS = 0 to –10 V ID = –500 mA 20 50 RG – Gate Resistance (W) 100 1 Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 t1 Notes: PDM 0.01 Single Pulse t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) 4 Siliconix P-37655—Rev. B, 25-Jul-94