BAP50-02

General purpose PIN diode BAP50 – 02 FEATURES · Low diode capacitance · Low diode forward resistance. APPLICATIONS · General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 2 1 SOD523 SC-79 1 CATHODE 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR I IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature CONDITIONS MIN. – – – -65 -65 MAX. 50 50 715 +150 +150 UNIT V mA mW °C °C T s =90°C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL VF VR IR Cd PARAMETER forward voltage reverse voltage reverse current diode capacitance CONDITIONS I F =50 mA I R =10µA V R =50 V V R = 0; f = 1 MHz V R = 1 V; f = 1 MHz V R = 5 V; f = 1 MHz rD diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 I F = 1 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 V R = 0; f = 900 MHz V R = 0; f = 1800 MHz V R = 0; f = 2450 MHz |s 21| 2 insertion loss I F = 0.5 mA; f = 900 MHz I F = 0.5 mA; f = 1800 MHz I F = 0.5 mA; f = 2450 MHz I F = 1 mA; f = 900 MHz I F = 1 mA; f = 1800 MHz I F = 1 mA; f = 2450 MHz |s 21| 2 insertion loss I F = 10 mA; f = 900 MHz I F = 10 mA; f = 1800 MHz I F = 10 mA; f = 2450 MHz MIN – 50 – – – – – – – – – – – – – – – – – – – TYP. 0.95 – – 0.4 0.3 0.22 25 14 3 20.4 17.3 15.5 1.74 1.79 1.88 1.03 1.09 1.15 0.26 0.32 0.34 MAX. 1.1 – 100 – 0.55 0.35 40 25 5 – – – – – – – – – – – – UNIT V V nA pF pF pF Ω Ω Ω dB dB dB dB dB dB dB dB dB dB dB dB |s 21| 2 isolation |s 21| 2 insertion loss S23–1/2 BAP50-02 ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue) SYMBOL τL PARAMETER charge carrier life time CONDITIONS when switched from I F =10 mA to I R = 6 mA; R L = 100 Ω; measured at I R =3 mA I F = 100 mA; f = 100 MHz MIN – TYP. 1.05 MAX. – UNIT µs L S series inductance – 0.6 – nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s 10 3 f = 100 MHz; T j =25°C PARAMETER thermal resistance from junction to soldering-point 600 VALUE 85 UNIT K/W 10 2 400 10 C d (pF) 200 r D( Ω) 1 10 -1 1 10 10 2 0 0 f = 1 MHz; T j =25°C 4 8 12 16 20 I F (mA ) VR(V) Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. 0 0 I F =10 mA. -1 -5 |s 21| 2(dB) I F = 1 mA. |s 21| 2(dB) -2 I F = 0.5 mA. -10 -3 -15 -4 Diode inserted in series with a 50 Ω s tripline circuit and biased via the analyzer Tee network. Tamb =25°C. -20 Diode zero biased and inserted in series with a 50 Ω s tripline circuit. Tamb =25°C. -5 0.5 1 1.5 2 2.5 3 -25 0.5 1 1.5 2 2.5 3 f (GHz ) f (GHz ) Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state as a function of frequency; typical values. Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a function of frequency; typical values. S23–2/2