BAP64-02

Silicon PIN diode FEATURES · High voltage, current controlled · RF resistor for RF attenuators and switches · Low diode capacitance · Low diode forward resistance · Very low series inductance · For applications up to 3 GHz. APPLICATIONS · RF attenuators and switches. DESCRIPTION Planar PIN diode in a SOD523 ultra small plastic SMD package. BAP64 – 02 1 2 SOD523 SC-79 1 CATHODE 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature CONDITIONS MIN. – – – -65 -65 MAX. 175 100 715 +150 +150 UNIT V mA mW °C °C I T s =90°C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS I F =50 mA V R =175V V R =20V V R = 0; f = 1 MHz V R = 1 V; f = 1 MHz V R = 20 V; f = 1 MHz r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 I F = 1 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 I F = 100 mA; f = 100 MHz; note 1 τL charge carrier life time when switched from I F =10 mA to I R = 6 mA; R L = 100 Ω; measured at I R =3 mA L Note S TYP. 0.95 – – 0.48 0.35 0.23 20 10 2 0.7 1.55 MAX. 1.1 10 1 – – 0.35 40 20 3.8 1.35 – UNIT V µA µA pF pF pF Ω Ω Ω Ω µs series inductance 0.6 – nH 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W S26–1/2 BAP64-02 10 2 f = 100 MHz; T j =25°C 500 400 10 C d (pF) 1 r D( Ω) 300 200 100 10 -1 f = 1 MHz; T j =25°C 10 -1 1 10 10 2 0 0 4 8 12 16 20 I F (mA ) VR(V) Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. 0 0 -1 |s 21| 2(dB) - 10 -2 (1) (2) (3) (4) I F =100 mA. I F =10 mA. I F = 1 mA. I F = 0.5 mA. -3 |s 21| 2(dB) - 20 -4 Diode inserted in series with a 50 Ω s tripline circuit and biased via the analyzer Tee network. Tamb =25°C. Diode zero biased and inserted in series with a 50 Ω s tripline circuit. Tamb =25°C. -5 0.5 1 1.5 2 2.5 3 - 30 0.5 1 1.5 2 2.5 3 f (GHz ) f (GHz ) Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state as a function of frequency; typical values. Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a function of frequency; typical values. S26–2/2