BAP65-02

Silicon PIN diode FEATURES · High voltage, current controlled · RF resistor for RF switches · Low diode capacitance · Low diode forward resistance (low loss) · Very low series inductance. 1 APPLICATIONS CATHODE · RF attenuators and switches · Bandswitch for TV tuners · Series diode for mobile communication transmit/receive switch. DESCRIPTION Planar PIN diode in a SOD523 ultra small SMD plastic package. BAP65 – 02 1 2 ANODE 2 SOD523 SC-79 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC60134). SYMBOL I VR IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature T s < 90°C CONDITIONS MIN. – – – -65 -65 MAX. 30 100 715 +150 +150 UNIT V mA mW °C °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS I F =50 mA V R =20 V V R = 0; f = 1 MHz V R = 1 V; f = 1 MHz V R = 3 V; f = 1 MHz r D diode forward resistance V R = 20 V; f = 1 MHz I F = 1 mA; f = 100 MHz; I F = 5 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 |s 21| 2 isolation I F = 100 mA; f = 100 MHz; V R = 0; f = 900 MHz V R = 0; f = 1800 MHz V R = 0; f = 2450 MHz |s 21| 2 insertion loss I F = 1 mA; f = 900 MHz I F = 1 mA; f = 1800 MHz I F = 1 mA; f = 2450 MHz I F = 5 mA; f = 900 MHz I F = 5 mA; f = 1800 MHz I F = 5 mA; f = 2450 MHz |s 21| 2 insertion loss I F = 10 mA; f = 900 MHz I F = 10 mA; f = 1800 MHz I F = 10 mA; f = 2450 MHz I F = 100 mA; f = 900 MHz I F = 100 mA; f = 1800 MHz I F = 100 mA; f = 2450 MHz TYP. 0.9 – 0.65 0.55 0.5 0.375 1 0.65 0.56 0.35 10 5.8 4.4 0.11 0.13 0.16 0.08 0.11 0.13 0.07 0.1 0.13 0.07 0.1 0.128 MAX. 1.1 20 – 0.9 0.8 – – 0.95 0.9 – – – – – – – – – – – – – – – – UNIT V nA pF pF pF pF Ω Ω Ω Ω dB dB dB dB dB dB dB dB dB dB dB dB dB dB dB |s 21| 2 insertion loss |s 21| 2 insertion loss S27–1/2 BAP65-02 ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue) SYMBOL τL PARAMETER charge carrier life time CONDITIONS when switched from I F =10 mA to I R = 6 mA; R L = 100 Ω; measured at I R =3 mA I F =10 mA ; f =100MHz TYP. 0.17 MAX. – UNIT µs L S series inductance 0.6 – nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W 10 f = 100 MHz; T j =25°C 1000 800 1 C d (pF) r D( Ω) 600 400 200 10 -1 f = 1 MHz; T j =25°C 10 -1 1 10 10 2 0 0 4 8 12 16 20 I F (mA ) VR(V) Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. 0 0 -0.1 - 10 |s 21| 2(dB) -0.2 (1) (2) (3) (4) (5) I F =0.5 mA. I F =1 mA. I F = 5 mA. I F = 10 mA. I F = 100mA. |s 21| 2(dB) - 20 -0.3 - 30 -0.4 Diode inserted in series with a 50 Ω s tripline circuit and biased via the analyzer Tee network. Tamb =25°C. Diode zero biased and inserted in series with a 50 Ω s tripline circuit. Tamb =25°C. -0.5 0 1 2 3 - 40 0 1 2 3 f (GHz ) f (GHz ) Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state as a function of frequency; typical values. Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a function of frequency; typical values. S27–2/2