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BAT54RLT1

BAT54RLT1

  • 厂商:

    ETL

  • 封装:

  • 描述:

    BAT54RLT1 - Schottky Barrier Diodes - E-Tech Electronics LTD

  • 详情介绍
  • 数据手册
  • 价格&库存
BAT54RLT1 数据手册
Schottky Barrier Diodes BAT54RLT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc 30 VOLTS SILICON HOT- CARRIER DETECTOR AND SWITCHING DIODES 3 1 ANODE 3 CATHODE 1 2 CASE 318–08, STYLE 8 SOT–23 (TO–236AB) DEVICE MARKING BAT54RLT1 = LV3 MAXIMUM RATINGS (T J = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF Value 30 200 2.0 TJ T stg –55 to +125 –55 to +150 °C °C Unit Volts mW mW/°C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) Reverse Leakage (V R = 25 V) Forward Voltage (I F = 0.1 mAdc) Forward Voltage (I F = 30 mAdc) Forward Voltage (I F = 100 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1 Forward Voltage (I F = 1.0 mAdc) Forward Voltage (I F = 10 mAdc) Symbol V (BR)R CT IR VF VF VF t rr VF VF Min 30 — — — — — — — — Typ — 7.6 0.5 0.22 0.41 0.52 — 0.29 0.35 Max — 10 2.0 0.24 0.5 1.0 5.0 0.32 0.40 Unit Volts pF µAdc Vdc Vdc Vdc ns Vdc Vdc G11–1/2 BAT54RLT1 820 Ω 2.0 k 0.1µF tr tp 10% t IF t rr t +10 V 100 µH IF 0.1 µF 50 Ω OUTPUT PULSE GENERATOR D.U.T. 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% i R(REC) = 1.0 mA INPUT SIGNAL VR IR OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p » t rr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 T A = 150°C I R , REVERSE CURRENT (µA) I F , FORWARD CURRENT (mA) 100 10 150°C T A = 125°C 10 1.0 125°C 1.0 T A = 85°C 0.1 85°C 25°C – 40°C –55°C 0.01 T A = 25°C 0.001 0 5 10 15 20 25 30 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 12 C T TOTAL CAPACITANCE (pF) 10 8 6 4 2 0 0 5 10 15 20 25 30 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance G11–2/2
BAT54RLT1
1. 物料型号:BAT54RLT1

2. 器件简介: - BAT54RLT1是一种肖特基势垒二极管,设计用于高速开关应用、电路保护和电压钳位。 - 极低的正向电压降低了导通损耗。 - 微型表面贴装封装非常适合于手持和便携式应用,这些应用中空间受限。

3. 引脚分配: - 1 ANODE(阳极)

4. 参数特性: - 最大额定值: - 反向电压(VR):30V - 正向功率耗散(PF):在25°C时为200mW,超过25°C时每度2.0mW/°C递减 - 工作结温范围(TJ):-55至+125°C - 存储温度范围(Tstg):-55至+150°C - 电气特性(TA=25°C): - 反向击穿电压(V(BRR)):30V - 总电容(CT):7.6至10pF - 反向漏电流(IR):0.5至2.0μA - 正向电压(VF)在不同电流下: - 0.1mA时:0.22至0.24Vdc - 30mA时:0.41至0.5Vdc - 100mA时:0.52至1.0Vdc - 反向恢复时间(tm):5.0ns

5. 功能详解: - 该二极管具有极快的开关速度和低正向电压,适合高速开关和电压钳位应用。

6. 应用信息: - 适用于需要高速开关和电路保护的场合,尤其是在空间受限的便携式设备中。

7. 封装信息: - 封装类型为SOT-23(TO-236AB),设备标记为BAT54RLT1 = LV3。
BAT54RLT1 价格&库存

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