BC847BDW1T1

Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. 6 5 4 BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1 6 5 4 Q2 Q1 See Table 1 1 2 3 2 3 SOT-363 /SC-88 CASE 419B STYLE1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous Symbol V CEO V CBO V EBO BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. Symbol PD Max 380 250 3.0 328 –55 to +150 Unit mW mW mW/°C °C/W °C R θJA T J , T stg ORDERING INFORMATION Device BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1 Package SOT–363 SOT–363 SOT–363 SOT–363 SOT–363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel BC846b–1/5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol V Min Typ Max Unit V 65 45 30 V (BR)CES 80 50 30 V (BR)CBO OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = 10 mA) BC846 Series BC847 Series BC848 Series Collector–Emitter Breakdown Voltage (I C = 10 µA, V EB = 0) BC846 Series BC847 Series BC848 Series Collector–Base Breakdown Voltage (I C = 10 µA) BC846 Series BC847 Series BC848 Series Emitter–Base Breakdown Voltage (I E = 1.0 µA) BC846 Series BC847 Series BC848 Series (V CB = 30 V) (V CB = 30 V, T A = 150°C) (BR)CEO — — — — — — — — — — — — — — — — — V — — — V — — — V — — — 15 5.0 80 50 30 V (BR)EBO 6.0 6.0 5.0 — — Collector Cutoff Current I CBO nA µA ON CHARACTERISTICS DC Current Gain (I C = 10 µA, V CE = 5.0 V) h FE BC846B, BC847B, BC848B BC847C, BC848C — — 200 420 — — — — 580 — 150 270 290 520 — — 0.7 0.9 660 — — — 450 800 0.25 0.6 — — 700 770 — BC846B, BC847B, BC848B BC847C, BC848C Collector–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V CE(sat) Collector–Emitter Saturation Voltage ( I C = 100 mA, I B = 5.0 mA) Base–Emitter Saturation Voltage (I C = 10 mA, I B = 0.5 mA) V BE(sat) Base–Emitter Saturation Voltage (I C = 100 mA, I B = 5.0 mA) Base–Emitter Voltage (I C = 2.0 mA, V CE = 5.0 V) V BE(on) Base–Emitter Voltage (I C = 10 mA, V CE = 5.0 V) (I C = 2.0 mA, V CE = 5.0 V) V V mV SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10 mA, V CE = 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = 10 V, f = 1.0 MHz) Noise Figure (I C = 0.2 mA, V CE = 5.0 V dc, R S = 2.0 kΩ, BC846B, BC847B, BC848B f = 1.0 kHz, BW = 200 Hz) BC847C, BC848C fT C obo NF 100 — — — — — — — — 4.5 10 4.0 MHz pF dB BC846b–2/5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 TYPICAL CHARACTERISTICS 1.0 0.9 1.5 0.8 1.0 0.8 0.6 0.7 2.0 h FE , NORMALIZED DC CURRENT GAIN V,VOLTAGE (VOLTS) 0.6 0.5 0.4 0.3 0.2 0.1 0.4 0.3 0.2 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages 2.0 θ vb, TEMPERATURE COEFFICIENT (mV/ ° C) 1.0 V CE, COLLECTOR-EMITTER VOLTAGE(V) 1.2 1.6 1.6 1.2 2.0 0.8 2.4 0.4 2.8 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient BC846b–3/5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 TYPICAL CHARACTERISTICS 10 7.0 T f , CURREN-GAIN-BANDWIDTH PRODUCT (MHz) 400 300 200 C,CAPACITANCE(pF) 5.0 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 3.0 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 V R , REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances I C , COLLECTOR CURRENT (mAdc) Figure 6. Current–Gain – Bandwidth Product 1.0 h FE , DC CURRENT GAIN (NORMALIZED) 0.8 2.0 1.0 V, VOLTAGE (VOLTS) 1.0 10 100 0.6 0.4 0.5 0.2 0.2 0.1 0.2 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I C , COLLECTOR CURRENT (mA) Figure 7. DC Current Gain V CE , COLLECTOR-EMITTER VOLTAGE(VOLTS) 2.0 -1.0 I C , COLLECTOR CURRENT (mA) Figure 8. “On” Voltage θ VB , TEMPERATURE COEFFICIENT (mV/ ° C) 1.6 -1.4 1.2 -1.8 0.8 -2.2 0.4 -2.6 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 -3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 I B , BASE CURRENT (mA) Figure 9. Collector Saturation Region I C , COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient BC846b–4/5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 1.0 D=0.5 0.2 0.1 0.1 0.05 0.02 P (pk) t1 t2 DUTY CYCLE, D = t 1 /t 2 SINGLE PULSE 0.001 0 1.0 10 100 1.0K 10K 100K 1.0M Z θJA (t) = r(t) R θJA R θJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.01 0.01 t, TIME (ms) Figure 11. Thermal Response -200 -100 -50 -10 -5.0 -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 The safe operating area curves indicate I C –V CE limits of thetransistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 12 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J (pk) may be calculated from the data in Figure 12. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. V CE , COLLECTOR–EMITTER VOLTAGE (V) I C , COLLECTOR CURRENT (mA) Figure 12. Active Region Safe Operating Area BC846b–5/5