BC857BDW1T1

Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. 6 5 4 BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC858CDW1T1 6 5 4 Q2 Q1 See Table 1 1 2 3 2 3 SOT–363/SC–88 CASE 419B STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current -Continuous Symbol V CEO V CBO V EBO BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR–5 = 1.0 x 0.75 x 0.062 in. Symbol PD Max 380 250 3.0 328 –55 to +150 Unit mW mW mW/°C °C/W °C R θJA T J , T stg ORDERING INFORMATION Device BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC858CDW1T1 Package SOT–363 SOT–363 SOT–363 SOT–363 SOT–363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel BC856b–1/5 BC856BDW1T1, BC857BDW1T1, BC857CDW1T1, BC858BDW1T1, BC858CDW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol V Min Typ Max Unit V –65 –45 –30 V (BR)CES –80 –50 –30 V (BR)CBO OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –10 mA) BC856 Series BC857 Series BC858 Series Collector–Emitter Breakdown Voltage (I C = –10 µA, V EB = 0) BC856 Series BC857 Series BC858 Series Collector–Base Breakdown Voltage (I C = –10 µA) BC856 Series BC857 Series BC858 Series Emitter–Base Breakdown Voltage (I E = –1.0 µA) BC856 Series BC857 Series BC858 Series (V CB = –30 V) (V CB = –30 V, T A = 150°C) (BR)CEO — — — — — — — — — — — — — — — — — V — — — V — — — V — — — –15 –4.0 –80 –50 –30 V (BR)EBO –5.0 –5.0 –5.0 — — Collector Cutoff Current I CBO nA µA ON CHARACTERISTICS DC Current Gain (I C = –10 µA, V CE = –5.0 V) h FE BC856B, BC857B, BC858B BC857C, BC858C — — 220 420 — — — — –0.6 — 150 270 290 520 — — –0.7 –0.9 –– — — — 475 800 –0.3 –0.65 — — –0.75 –0.82 — (I C = –2.0 mA, V CE =– 5.0 V) BC856B, BC857B, BC858B BC857C, BC858C Collector–Emitter Saturation Voltage (I C = -10 mA, I B = -0.5 mA) V CE(sat) Collector–Emitter Saturation Voltage ( I C = -100 mA, I B = -5.0 mA) Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) V BE(sat) Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V) V BE(on) Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V) V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = –10 mA, V CE = –5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = –10 V, f = 1.0 MHz) Noise Figure (I C = –0.2 mA, V CE = –5.0 V dc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT C obo NF 100 — — — — — — 4.5 10 MHz pF dB BC856b–2/5 BC856BDW1T1, BC857BDW1T1, BC857CDW1T1 BC858BDW1T1, BC858CDW1T1 TYPICAL PNP CHARACTERISTICS — BC856 h FE , DC CURRENT GAIN (NORMALIZED) -1.0 -0.8 2.0 V, VOLTAGE (VOLTS) -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.6 1.0 0.5 -0.4 -0.2 0.2 0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 I C , COLLECTOR CURRENT (AMP) I C , COLLECTOR CURRENT (mA) Figure 1. DC Current Gain V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS) Figure 2. “On” Voltage θ VB , TEMPERATURE COEFFICIENT (mV/°C) -2.0 -1.0 -1.6 -1.4 -1.2 -1.8 -0.8 -2.2 -0.4 -2.6 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -3.0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region 40 Figure 4. Base–Emitter Temperature Coefficient f T , CURRENT-GAIN-BANDWIDTH PRODUCT(MHz) 500 C, CAPACITANCE (pF) 20 200 10 0.8 6.0 100 50 4.0 20 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -1.0 -10 -100 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Current–Gain – Bandwidth Product BC856b–3/5 BC856BDW1T1, BC857BDW1T1, BC857CDW1T1 BC858BDW1T1, BC858CDW1T1 TYPICAL PNP CHARACTERISTICS — BC857/BC858 h FE , DC CURRENT GAIN (NORMALIZED) 2.0 1.5 -0.8 -1.0 V, VOLTAGE (VOLTS) -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 1.0 0.7 -0.6 0.5 -0.4 0.3 -0.2 0.2 -0.2 0 -1.0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 7. Normalized DC Current Gain V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) θ VB , TEMPERATURE COEFFICIENT (mV/°C) Figure 8. “Saturation” and “On” Voltages -2.0 -1.0 -1.6 -1.4 -1.2 -1.8 -0.8 -2.2 -0.4 -2.6 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -3.0 -0.2 -0.5 -1.0 -10 -100 I B , BASE CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 9. Collector Saturation Region f T , CURRENT-GAIN-BANDWIDTH PRODUCT(MHz) Figure 10. Base–Emitter Temperature Coefficient 10 400 300 200 150 100 80 60 7.0 C, CAPACITANCE (pF) 5.0 3.0 2.0 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 V R , REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 11. Capacitance Figure 12. Current-Gain-Bandwidth Product BC856b–4/5 BC846BDW1T1, BC847BDW1T1, BC847CDW1T1, BC848BDW1T1, BC848CDW1T1 1.0 D=0.5 0.2 0.1 0.1 0.05 0.02 P (pk) t1 t2 DUTY CYCLE, D = t 1 /t 2 SINGLE PULSE 0.001 0 1.0 10 100 1.0K 10K 100K 1.0M Z θJA (t) = r(t) R θJA R θJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) – T C = P (pk) R θJC (t) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.01 0.01 t, TIME (ms) Figure 13. Thermal Response -200 -100 -50 -10 -5.0 -2.0 -1.0 -5.0 -10 -30 -45 -65 -100 The safe operating area curves indicate I C –V CE limits of thetransistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150°C. T J (pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. V CE , COLLECTOR–EMITTER VOLTAGE (V) I C , COLLECTOR CURRENT (mA) Figure 14. Active Region Safe Operating Area BC856b–5/5