BD110

Dual SCHOTTKY Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six– leaded package. The SOT–363 is ideal for low–power surface mount applications where board space is at a premium, such as portable products. Surface Mount Comparisons: Area (mm 2 ) Max Package P D (mW) Device Count SOT–363 4.6 120 2 SOT–23 7.6 225 1 1 2 3 MBD110DWT1 MBD330DWT1 MBD770DWT1 6 5 4 SOT–363 CASE 419B–01, STYLE 6 Space Savings: Package SOT–363 1 × SOT–23 40% 2 × SOT–23 70% Cathode 6 N/C 5 Anode 4 The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage 1 Anode 2 N/C 3 Cathode MAXIMUM RATINGS Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Forward Power Dissipation T A = 25°C Junction Temperature Storage Temperature Range PF TJ T stg Symbol VR Value 7.0 30 70 120 –55 to +125 –55 to +150 Unit Vdc mW °C °C DEVICE MARKING MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5 Thermal Clad is a trademark of the Bergquist Company. MBD110–1/5 MBD110DWT1 MBD330DWT1 MBD770DWT1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Symbol V (BR)R MBD110DWT1 MBD330DWT1 MBD770DWT1 CT MBD110DWT1 CT MBD330DWT1 MBD770DWT1 IR MBD110DWT1 MBD330DWT1 MBD770DWT1 NF MBD110DWT1 VF MBD110DWT1 MBD330DWT1 MBD770DWT1 — — — — — 0.5 0.38 0.52 0.42 0.7 0.6 0.45 0.6 0.5 1.0 — 6.0 — Vdc — — — 0.02 13 9.0 0.25 200 200 µA nAdc nAdc dB — — 0.9 0.5 1.5 1.0 — 0.88 1.0 pF Min 7.0 30 70 Typ 10 — — Max — — — pF Unit Volts Diode Capacitance (V R = 0, f = 1.0 MHz, Note 1) Total Capacitance (V R = 15 Volts, f = 1.0 MHz) (V R = 20 Volts, f = 1.0 MHz) Reverse Leakage (V R = 3.0 V) (V R = 25 V) (V R = 35 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (I F = 10 mA) (I F = 1.0 mAdc) (I F = 10 mA) (I F = 1.0 mAdc) (I F = 10 mA) MBD110–2/5 MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS — MBD110DWT1 1.0 0.7 0.5 100 0.2 I F, FORWARD CURRENT (mA) 40 50 60 70 80 90 100 110 120 130 I R, REVERSE LEAKAGE (µ A) 10 0.1 0.07 0.05 1.0 0.02 0.01 30 0.1 0.3 0.4 0.5 0.6 0.7 0.8 T A , AMBIENT TEMPERATURE (°C) V F , FORWARD VOLTAGE (VOLTS) Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 11 10 9 C, CAPACITANCE (pF) 0.9 NF, NOISE FIGURE (dB) 8 7 6 5 4 3 2 1 0.8 0.7 0.6 0 1.0 2.0 3.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10 V R , REVERSE VOLTAGE (VOLTS) P LO , LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure NOTES ON TESTING AND SPECIFICATIONS Note 1 – C C and C T are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 – Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. I F amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 – L S is measured on a package having a Figure 5. Noise Figure Test Circuit short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter). MBD110–3/5 MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS MBD330DWT1 2.4 2.0 1.6 1.2 0.8 0.4 0 0 τ , MINORITY CARRIER LIFETIME (ps) 3.0 6.0 9.0 12 15 18 21 24 27 30 2.8 500 C T , TOTAL CAPACITANCE (pF) 400 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 V R , REVERSE VOLTAGE (VOLTS) I F , FORWARD CURRENT (mA) Figure 6. Total Capacitance Figure 7. Minority Carrier Lifetime 10 100 I R , REVERSE LEAKAGE (µA) 1.0 I F , FORWARD CURRENT (mA) 10 0.1 1.0 0.01 0.001 0 0.1 6.0 12 18 24 30 0.2 0.4 0.6 0.8 1.0 1.2 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 8. Reverse Leakage Figure 9. Forward Voltage MBD110–4/5 MBD110DWT1 MBD330DWT1 MBD770DWT1 TYPICAL CHARACTERISTICS MBD770DWT1 1.6 τ , MINORITY CARRIER LIFETIME (ps) 5.0 10 15 20 25 30 35 40 45 50 2.0 500 C T , TOTAL CAPACITANCE (pF) 400 1.2 300 0.8 200 0.4 100 0 0 0 0 10 20 30 40 50 60 70 80 90 100 V R , REVERSE VOLTAGE (VOLTS) I F , FORWARD CURRENT (mA) Figure 10 . Total Capacitance Figure 11. Minority Carrier Lifetime 10 100 I R , REVERSE LEAKAGE (µA) 1.0 I F , FORWARD CURRENT (mA) 10 0.1 1.0 0.01 0.001 0 0.1 10 20 30 40 50 0.2 0.4 0.8 1.2 1.6 2.0 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 12. Reverse Leakage Figure 13. Forward Voltage MBD110–5/5