M1MA151AT1

Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications. • Fast t rr , < 3.0 ns • Low C D , < 2.0 pF • Available in 8 mm Tape and Reel Use M1MA151/2AT1 to order the 7 inch/3000 unit reel. Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel. ANODE 3 3 M1MA151AT1 M1MA152AT1 SC-59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V-100mA SURFACE MOUNT 2 1 CASE 318D–03, STYLE4 SC–59 2 1 CATHODE NO CONNECTION MAXIMUM R ATINGS (T A = 25°C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current M1MA151AT1 M1MA152AT1 M1MA151AT1 M1MA152AT1 Symbol VR V RM IF I FM I FSM (1) Symbo PD TJ T stg Symbol IR VF VR CD t rr (2) Condition V R = 35 V V R = 75 V I F = 100 mA I R = 100 µA Value 40 80 40 80 100 225 500 lMax 200 150 -55 to +150 Max 0.1 0.1 1.2 — — 2.0 3.0 Unit Vdc Vdc mAdc mAdc mAdc Unit mW °C °C Unit µ Adc Vdc Vdc pF ns THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 2 5°C) Characteristic Reverse Voltage Leakage Current M1MA151AT1 M1MA152AT1 Forward Voltage Reverse Breakdown Voltage M1MA151AT1 M1MA152AT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. t rr Test Circuit Min — — — 40 80 V R = 0, f = 1.0 MHz — I F = 10 mA, V R = 6.0 V, — R L = 100Ω, I rr = 0.1 I R H1–1/2 M1MA151AT1 M1MA152AT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE t r OUTPUT PULSE t t I F rr t p t 10% R L 90% V R I rr = 0.1 I I F = 10 mA V R= 6 V R L = 100 Ω R t p = 2 µs t r = 0.35 ns DEVICE MARKING Marking Symbol Type No. Symbol 151A MA 152A MB MA X The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. H1–2/2