M1MA152WKT1

Common Anode Silicon Dual Switching diodes These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low power surface mount applications. • Fast t rr , < 3.0 ns • Low C D , < 2.0 pF • Available in 8 mm Tape and Reel Use M1MA151/2WKT1 to order the 7 inch/3000 unit reel. Use M1MA151/2WKT3 to order the 13 inch/10,000 unit reel. CATHODE 3 M1MA151WKT1 M1MA152WKT1 SC-59 PACKAGE COMMON CATHODE DUAL SWITCHING DIODES 40/80 V-100mA SURFACE MOUNT 3 2 1 2 ANODE 1 CASE 318D–03, STYLE3 SC–59 MAXIMUM RATINGS (T A = 25°C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current M1MA151WAT1 M1MA152WAT1 M1MA151WAT1 M1MA152WAT1 Single Dual Single Dual Single Dual Symbol VR V RM IF I FM I FSM (1) Value 40 80 40 80 100 150 225 340 500 750 Symbo PD TJ T stg lMax 200 150 -55 to +150 Unit mW °C °C Condition V R = 35 V V R = 75 V I F = 100 mA I R = 100 µA Max 0.1 0.1 1.2 — — 2.0 3.0 Unit µ Adc Vdc Vdc pF ns Unit Vdc Vdc mAdc mAdc mAdc THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 2 5°C) Characteristic Reverse Voltage Leakage Current M1MA151WAT1 M1MA152WAT1 Forward Voltage Reverse Breakdown Voltage M1MA151WAT1 M1MA152WAT1 Diode Capacitance Reverse Recovery Time 1. t = 1 SEC 2. t rr Test Circuit Symbol IR VF VR CD t rr (2) Min — — — 40 80 V R = 0, f = 1.0 MHz — I F = 10 mA, V R = 6.0 V, — R L = 100Ω, I rr = 0.1 I R H4–1/2 M1MA151WKT1 M1MA152WKT1 RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE t r OUTPUT PULSE t t I F rr t p t 10% R L 90% V R I rr = 0.1 I I F = 10 mA V R= 6 V R L = 100 Ω R t p = 2 µs t r = 0.35 ns DEVICE MARKING—EXAMPLE Marking Symbol Type No. Symbol 151WK 152WK MT MU MT X The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured. H4–2/2