MBD770DWT1

Dual SCHOTTKY Barrier Diodes These SCHOTTKY barrier diodes are designed for high speed switching applications, circuit protection, and vol tage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. • Extremely Fast Switching Speed • Low Forward Voltage — 0.35 V @ I F = 10 mAdc Cathode 6 N/C 5 Anode 4 MBD54DWT1 30 VOLTS DUAL HOT–CARRIER DETECTOR AND SWITCHING DIODES 6 5 4 1 2 3 1 Anode 2 N/C 3 Cathode SOT–363 CASE 419B–01, STYLE 6 MAXIMUM RATINGS (T = 125°C unless otherwise noted) Rating Reverse Voltage Forward Power Dissipation @ T A = 25°C Derate above 25°C Forward Current (DC) Junction Temperature Storage Temperature Range Symbol VR PF Value 30 150 1.2 200 Max 125 Max –55 to +150 Unit Volts mW mW/°C mA °C °C IF TJ T stg DEVICE MARKING MBD54DWT1 = BL ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol V (BR)R Reverse Breakdown Voltage (I R = 10 µA) Total Capacitance (V R = 1.0 V, f = 1.0 MHz) CT Reverse Leakage (V R = 25 V) IR Forward Voltage (I F = 0.1 mAdc) VF Forward Voltage (I F = 30 mAdc) VF Forward Voltage (I F = 100 mAdc) VF Reverse Recovery Time t rr (I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1 Forward Voltage (I F = 1.0 mAdc) VF Forward Voltage (I F = 10 mAdc) VF Forward Current (DC) IF Repetitive Peak Forward Current I FRM Non–Repetitive Peak Forward Current (t