MMBV809

Silicon Tuning Diode This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ratio • Available in Surface Mount Package • Available in 8 mm Tape and Reel 1 MMBV809LT1 3 1 ANODE ( 3 CATHODE 2 CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Device Dissipation(1) @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ T stg Value 20 20 225 1.8 +125 –55 to +150 Unit Vdc mAdc mW mW/°C °C °C DEVICE MARKING MMBV809LT1=5K ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR=10µAdc) Reverse Voltage Leakage Current (V R=15Vdc) Symbol V (BR)R I R Min 20 — Max — 50 Unit Vdc nAdc C T Diode Capacitance Device Type V R =2.0Vdc,f=1.0MHz pF Min MMBV809LT1 4.5 Q,Figure of Merit V R =3.0Vdc f=500MHz Typ 75 C R ,Capacitance Ratio C 2/ C 8 f=1.0MHz(2) Min 1.8 Typ 5.3 Max 6.1 Max 2.6 1. FR-5 Board 1.0 x 0.75 x 0.62 in. 2. CR is the ratio of Ct measured at 2.0 Vdc divided by Ct measured at 8.0 vdc I5–1/2 MMBV809LT1 TYPICAL CHARACTERISTICS 10 1000 C T , DIODE CAPACITANCE (pF) 9 Q , FIGURE OF MERIT 8 7 6 5 4 3 2 1 0 0.5 1 2 3 4 5 8 10 15 V R = 3Vdc T A = 25°C 100 10 10 100 1000 V R , REVERSE VOLTAGE (VOLTS) f , FREQUENCY ( GHz ) Figure 1. Diode Capacitance Figure 2. Figure of Merit R S , SERIES RESISTANCE ( MHz) CT,DIODECAPACITANCE(NORMALIZED) 1000 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 –25 0 +25 +50 +75 +100 +125 V R= 3.0Vdc f = 1.0MHz 800 V R= 3.0Vdc f = 1 .0MHz 600 400 0 0.2 0.4 0.6 0.8 1.0 1.2 f , FREQUENCY ( GHz ) T A , AMBIENT TEMPERATURE (°C) Figure 3. Series Resistance Figure 4. Diode Capacitance I5–2/2