MMDL101

Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE • Very Low Capacitance — Less than 1.0 pF @ Zero Volts • Low Noise Figure — 6.0 dB Typ @ 1.0 GHz • Device Marking: 4M 1 1 CATHODE 2 ANODE 2 PLASTIC SOD– 323 CASE 477 MAXIMUM RATINGS Symbol VR Rating Reverse Voltage Value 7.0 Unit Vdc THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR–5 Board,* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.57 635 –55 to+150 Unit mW mW/°C °C/W °C R θJA T J , T stg *FR–5 Minimum Pad ORDERING INFORMATION Device MMDL101T1 Package SOD–323 Shipping 3000 / Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 0, f = 1.0MHz, Note 1) Reverse Leakage (V R = 3.0 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (I F = 10 mA) *Notes on Next Page Symbol V (BR)R CT IR NF V Min 7.0 Typ 10 Max — Unit Volts pF nAdc dB Vdc — — — — 0.88 20 6.0 0.5 1.0 250 — 0.6 F S1–1/3 MMDL101T1 TYPICAL CHARACTERISTICS 1.0 100 I R , REVERSE LEAKAGE ( µA) 0.5 V R = 3.0 Vdc 0.2 0.1 0.07 0.05 I F , FORWARD CURRENT (mA) 0.7 10 T A = 85°C T A = –40°C 1.0 T A = 25°C MMBD110T1 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.02 MMBD110T1 0.01 30 40 50 60 70 80 90 100 110 120 130 T A , AMBIENT TEMPERATURE (°C) V F , FORWARD VOLTAGE (VOLTS) Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 1 1 10 C, CAPACITANCE (pF) NF, NOISE FIGURE (dB) 0.9 9 8 7 6 5 4 3 2 1 LOCAL OSCILLATOR FREQUENCY = 1.0GHz (Test Circuit Figure 5) 0.8 0.7 MMBD110T1 0.6 0 1.0 2.0 3.0 4.0 MMBD110T1 0.1 0.2 0.5 1.0 2.0 5.0 10 V R , REVERSE VOLTAGE (VOLTS) P LO , LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz Figure 5. Noise Figure Test Circuit NOTES ON TESTING AND SPECIFICATIONS Note1—C C andC T are measured using a capacitance bridge(Boonton Electronics Model 75A or equivalent). Note2—Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz.The LO power is adjusted for 1.0 mW. I F amplifier NF = 1.5 dB, f = 30MHz, see Figure 5. S1–2/3 MMDL101T1 PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE A K A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. MILLIMETERS DIM E D 1 2 B INCHES MIN MAX 0.063 0.071 0.045 0.053 0.031 0.039 0.010 0.016 0.006 REF 0.000 0.004 0.0035 0.0070 0.091 0.106 C J NOTE 3 H A B C D E H J K MIN MAX 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 0.63 mm 0.025’’ STYLE 1: PIN 1. CATHODE 2. ANODE 1.60 mm 0.063’’ 2.85 mm 0.112’’ mm inches 0.83 mm 0.033’’ ( ) SOD–323 Soldering Footprint S1–3/3