Schottky Barrier Diode
Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications.
MMDL101T1
1.0 pF SCHOTTKY BARRIER DIODE
• Very Low Capacitance — Less than 1.0 pF @ Zero Volts • Low Noise Figure — 6.0 dB Typ @ 1.0 GHz • Device Marking: 4M
1
1 CATHODE
2 ANODE
2
PLASTIC SOD– 323 CASE 477
MAXIMUM RATINGS
Symbol VR Rating Reverse Voltage Value 7.0 Unit Vdc
THERMAL CHARACTERISTICS
Symbol PD Characteristic Total Device Dissipation FR–5 Board,* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.57 635 –55 to+150 Unit mW mW/°C °C/W °C
R θJA T J , T stg
*FR–5 Minimum Pad
ORDERING INFORMATION
Device MMDL101T1 Package SOD–323 Shipping 3000 / Tape & Reel
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 0, f = 1.0MHz, Note 1) Reverse Leakage (V R = 3.0 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (I F = 10 mA) *Notes on Next Page Symbol V (BR)R CT IR NF V Min 7.0 Typ 10 Max — Unit Volts pF nAdc dB Vdc
— — — —
0.88 20 6.0 0.5
1.0 250 — 0.6
F
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MMDL101T1
TYPICAL CHARACTERISTICS
1.0 100
I R , REVERSE LEAKAGE ( µA)
0.5
V R = 3.0 Vdc
0.2 0.1 0.07 0.05
I F , FORWARD CURRENT (mA)
0.7
10
T A = 85°C
T A = –40°C
1.0
T A = 25°C MMBD110T1
0.1 0.3 0.4 0.5 0.6 0.7 0.8
0.02
MMBD110T1
0.01 30 40 50 60 70 80 90 100 110 120 130
T A , AMBIENT TEMPERATURE (°C)
V F , FORWARD VOLTAGE (VOLTS)
Figure 1. Reverse Leakage
Figure 2. Forward Voltage
1.0
1 1 10
C, CAPACITANCE (pF)
NF, NOISE FIGURE (dB)
0.9
9 8 7 6 5 4 3 2 1
LOCAL OSCILLATOR FREQUENCY = 1.0GHz (Test Circuit Figure 5)
0.8
0.7
MMBD110T1
0.6 0 1.0 2.0 3.0 4.0
MMBD110T1
0.1 0.2 0.5 1.0 2.0 5.0 10
V R , REVERSE VOLTAGE (VOLTS)
P LO , LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A
DIODE IN TUNED MOUNT
NOISE FIGURE METER H.P. 342A
IF AMPLIFIER NF = 1.5 dB f = 30 MHz
Figure 5. Noise Figure Test Circuit
NOTES ON TESTING AND SPECIFICATIONS Note1—C C andC T are measured using a capacitance bridge(Boonton Electronics Model 75A or equivalent). Note2—Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz.The LO power is adjusted for 1.0 mW. I F amplifier NF = 1.5 dB, f = 30MHz, see Figure 5.
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MMDL101T1
PACKAGE DIMENSIONS
SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE A
K A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. MILLIMETERS DIM
E
D
1
2
B
INCHES MIN MAX 0.063 0.071 0.045 0.053 0.031 0.039 0.010 0.016 0.006 REF 0.000 0.004 0.0035 0.0070 0.091 0.106
C
J
NOTE 3
H
A B C D E H J K
MIN MAX 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70
0.63 mm 0.025’’
STYLE 1: PIN 1. CATHODE 2. ANODE
1.60 mm 0.063’’ 2.85 mm 0.112’’ mm inches
0.83 mm 0.033’’
(
)
SOD–323
Soldering Footprint
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