MSD1010T1

Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLineTM Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages which are designed for low power surface mount applications. • Low V CE(sat) , < 0.1 V at 50 mA Applications • LCD Backlight Driver • Annunciator Driver • General Output Device Driver MMBT1010LT1 MSD1010T1 PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT 3 1 2 MAXIMUM RATINGS (T A = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Symbol V (BR)CBO V (BR)CEO V (BR)EBO IC Value 45 15 5.0 100 Unit Vdc Vdc Vdc mAdc CASE 318–08, STYLE 6 SOT– 23 3 THERMAL CHARACTERISTICS Characteristic Power Dissipation T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Symbol P D (1) Max 250 1.8 R θJA TJ T stg 1 2 Unit mW mW/°C °C/W °C °C CASE 318D –04, STYLE 1 SC– 59 556 150 –55 —+150 COLLECTOR DEVICE MARKING MMBT1010LT1 = GLP; MSD1010T1 = GLP BASE EMITTER ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol V (BR)CEO V (BR)EBO I CBO I CEO h FE1 (2) V CE(sat)(2) Condition I C = 10 mA, I B = 0 I E = 10 µA,I E = 0 V CB = 20 V, I E = 0 V CE = 10 V, I B = 0 V CE = 5 V,I C = 100 mA I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA I C = 100 mA, I B = 10 mA I C = 100 mA, I B = 10 mA Min 15 5.0 — — 300 — — — Max — — 0.1 100 600 0.1 0.1 0.19 1.1 Unit Vdc Vdc µA µA — Vdc Base-Emitter Saturation Voltage V BE(sat)(2) Vdc (1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (2) Pulse Test: Pulse Width