MSQA6V1W5

Quad Array for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features • SC88A Package Allows Four Separate Unidirectional Configurations • Low Leakage < 1 µA @ 3 Volt • Breakdown Voltage: 6.1 Volt – 7.2 Volt @ 1 mA • Low Capacitance (90 pF typical) • ESD Protection Meeting IEC1000–4–2 Mechanical Characteristics • Void Free, Transfer–Molded, Thermosetting Plastic Case • Corrosion Resistant Finish, Easily Solderable • Package Designed for Optimal Automated Board Assembly • Small Package Size for High Density Applications 1 1 2 3 MSQA6V1W5 5 4 SOT-353 /SC-88A CASE 419A MARKING DIAGRAM 4 5 61 2 3 61 = Device Marking D = One Digit Date Code ORDERING INFORMATION Device MSQA6V1W5 Package SC–88A Shipping 3000/Tape & Reel 5 4 1 D 2 3 MSQA6V–1/3 MSQA6V1W5 MAXIMUM RATINGS (T A = 25°C unless otherwise noted) Characteristic Peak Power Dissipation @ 20 µs @T A < 25°C (Note 1.) Steady State Power – 1 Diode (Note 2.) Thermal Resistance Junction to Ambient Above 25°C, Derate Maximum Junction Temperature Operating Junction and Storage Temperature Range ESD Discharge MIL STD 883C – Method 3015–6 IEC1000–4–2, Air Discharge Symbol P pk PD R θJA T JMax T J,T stg V PP Value 150 385 325 3.1 150 –55 to +150 16 16 9 260 Unit Watts mW °C/W mW/°C °C °C kV IEC1000–4–2, Contact Discharge Lead Solder Temperature (10 seconds duration) ELECTRICAL CHARACTERISTICS Breakdown Voltage V BR @ 1 mA (Volts) Min Nom Max 6.1 6.6 7.2 Leakage Current I RM @ V RM = 3 V (µA) 1.0 TL Capacitance @ 0 V Bias (pF) 90 °C Device MSQA6V1W5 Max V F @ I F = 200 mA (V) 1.25 1. Non–repetitive current per Figure 1. Derate per Figure 2. 2. Only 1 diode under power. For all 4 diodes under power, P D will be 25%. Mounted on FR–4 board with min pad. P pk, PEAK SURGE POWER (WATTS) 1000 100 % OF PEAK PULSE CURRENT 90 80 70 60 50 40 30 20 10 0 100 100 1 1 10 100 1000 0 20 40 60 80 t, TIME (ms) t, TIME (µs) Figure 1. Pulse Width Figure 2. 8 × 20 µs Pulse Waveform MSQA6V–2/3 MSQA6V1W5 100 100 OR CURRENT @ T A = 25 C ° TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY 0 25 50 75 100 125 150 175 200 90 80 70 60 50 40 30 20 10 0 90 80 70 60 50 40 30 20 10 0 0 1.0 2.0 3.0 4.0 5.0 T A , AMBIENT TEMPERATURE (°C) BIAS VOLTAGE (VOLTS) Figure 3. Pulse Derating Curve 1.0 100 Figure 4. Capacitance 0.1 I pp, PEAK PULSE CURRENT (AMPS) I F , FORWARD CURRENT (A) 10 0.01 0.001 0.6 0.7 0.8 0.9 1.0 1.0 1.2 1.0 0 5.0 10 15 20 25 30 V F , FORWARD VOLTAGE (VOLTS) V C , CLAMPING VOLTAGE (VOLTS) Figure 5. Forward Voltage 100 Figure 6. Clamping Voltage versus Peak Pulse Current (Reverse Direction) I pp , PEAK FORWARD PULSE CURRENT (AMPS) 10 1.0 0.1 0 2.0 4.0 6.0 8.0 10 12 V C , FORWARD CLAMPING VOLTAGE (VOLTS) Figure 7. Clamping Voltage versus Peak Pulse Current (Forward Direction) MSQA6V–3/3