MUN5332DW1T1

Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel MUN5311DW1T1 Series 6 5 4 1 2 3 SOT-363 CASE 419B STYLE1 MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 6 5 4 and Q 2 , – minus sign for Q 1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature 1. FR–4 @ Minimum Pad Symbol Value V CBO 50 V CEO 50 IC 100 Unit Vdc Vdc mAdc Q2 R2 R1 1 2 R1 R2 Q1 3 Symbol PD Max 187 (Note 1.) 256 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) Unit mW mW/°C °C/W MARKING DIAGRAM 6 5 4 XX 1 2 3 R θJA 670 (Note 1.) 490 (Note 2.) xx = Device Marking = (See Page 2) Symbol PD Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) –55 to +150 Unit mW mW/°C °C/W °C/W °C DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. R θJA R θJL T J , T stg 2. FR–4 @ 1.0 x 1.0 inch Pad MUN5311dw–1/13 MUN5311DW1T1 DEVICE MARKING AND RESISTOR VALUES Device Package MUN5311DW1T1 SOT–363 MUN5312DW1T1 SOT–363 MUN5313DW1T1 SOT–363 MUN5314DW1T1 SOT–363 MUN5315DW1T1 (Note 3.) SOT–363 MUN5316DW1T1 (Note 3.) SOT–363 MUN5330DW1T1 (Note 3.) SOT–363 MUN5331DW1T1 (Note 3.) SOT–363 MUN5332DW1T1 (Note 3.) SOT–363 MUN5333DW1T1 (Note 3.) SOT–363 MUN5334DW1T1 (Note 3.) SOT–363 MUN5335DW1T1 (Note 3.) SOT–363 Series Marking 11 12 13 14 15 16 30 31 32 33 34 35 R 1(K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 R 2(K) 10 22 47 47 88 1.0 2.2 4.7 47 47 47 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted) Characteristic Symbol Min Typ Max OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 50 V, I E = 0) I CBO – – 100 Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0) I CEO – – 500 I EBO – – 0.5 Emitter-Base Cutoff Current MUN5311DW1T1 – – 0.2 (V EB = 6.0 V, I C = 0) MUN5312DW1T1 – – 0.1 MUN5313DW1T1 – – 0.2 MUN5314DW1T1 – – 0.9 MUN5315DW1T1 – – 1.9 MUN5316DW1T1 – – 4.3 MUN5330DW1T1 – – 2.3 MUN5331DW1T1 – – 1.5 MUN5332DW1T1 – – 0.18 MUN5333DW1T1 – – 0.13 MUN5334DW1T1 – – 0.2 MUN5335DW1T1 Collector-Base Breakdown Voltage (I C =10 µA, I E = 0) V (BR)CBO 50 – – Collector-Emitter Breakdown Voltage(Note 4.)(IC =2.0 mA,I B=0) V (BR)CEO 50 – – 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Unit nAdc nAdc mAdc Vdc Vdc MUN5311dw–2/13 MUN5311DW1T1 Series ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(Note 5.) 35 60 – DC Current Gain MUN5311DW1T1 h FE 60 100 – (V CE = 10 V, I C = 5.0 mA) MUN5312DW1T1 80 140 – MUN5313DW1T1 80 140 – MUN5314DW1T1 160 350 – MUN5315DW1T1 160 350 – MUN5316DW1T1 3.0 5.0 – MUN5330DW1T1 8.0 15 – MUN5331DW1T1 15 30 – MUN5332DW1T1 80 200 – MUN5333DW1T1 80 150 – MUN5334DW1T1 80 140 – MUN5335DW1T1 V CE(sat) – – 0.25 Vdc Collector-Emitter Saturation Voltage (I C = 10 mA, I B = 0.3 mA) (I C = 10 mA, I B = 5 mA) MUN5330DW1T1/MUN5331DW1T1 (I C = 10 mA, I B = 1 mA) MUN5315DW1T1/MUN5316DW1T1 MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1 Output Voltage (on) (V CC= 5.0V, VB = 2.5V,R L= 1.0 kΩ) MUN5311DW1T1 MUN5312DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 (V CC=5.0V,VB=3.5 V, RL=1.0kΩ) MUN5313DW1T1 V OL – – – – – – – – – – – – – – – – – – – – – – – – 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc MUN5311dw–3/13 MUN5311DW1T1 Series ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(Note 5.) Output Voltage (off) (VCC =5.0V, VB=0.5V, RL=1.0kΩ) (VCC=5.0V, VB=0.050V, RL=1.0kΩ) MUN5330DW1T1 (VCC=5.0V, VB=0.25V, RL=1.0kΩ) MUN5315DW1T1 MUN5316DW1T1 MUN5333DW1T1 Input Resistor MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 V OH 4.9 – – Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 – 0.8 0.055 0.38 0.038 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 – 1.0 0.1 0.47 0.047 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 – 1.2 0.185 0.56 0.056 kΩ Resistor Ratio R 1/ R 2 MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1/MUN5316DW1T1 MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 300 P D , POWER DISSIPATION (mW) 250 200 150 100 50 0 –50 0 50 100 150 T A , AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve MUN5311dw–4/13 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS – MUN5311DW1T1 NPN TRANSISTOR V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 0.01 0.001 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 2. V CE(sat) versus I C 4 100 Figure 3. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 3 1 2 0.1 1 0.01 0 0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 4. Output Capacitance 10 Figure 5. Output Current versus Input Voltage V in , INPUT VOLTAGE (VOLTS) 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current MUN5311dw–5/13 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS – MUN5311DW1T1 PNP TRANSISTOR V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 0.1 100 0.01 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C 4 100 I C , COLLECTOR CURRENT (mA) Figure 8. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 3 1 2 0.1 1 0.01 0.001 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance 100 Figure 10. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current MUN5311dw–6/13 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS – MUN5312DW1T1 NPN TRANSISTOR V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 0.01 0.001 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) Figure 12. V CE(sat) versus I C 4 100 I C , COLLECTOR CURRENT (mA) Figure 13. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 3 1 2 0.1 1 0.01 0.001 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance 100 Figure 15. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current MUN5311dw–7/13 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS – MUN5312DW1T1 PNP TRANSISTOR V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 0.01 0.001 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C 4 100 Figure 18. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 3 1 2 0.1 1 0.01 0.001 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance 100 Figure 20. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current MUN5311dw–8/13 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS – MUN5313DW1T1 NPN TRANSISTOR V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 0.1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 0.01 0.001 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) Figure 22. V CE(sat) versus I C 4 100 I C , COLLECTOR CURRENT (mA) Figure 23. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 3 1 2 0.1 1 0.01 0.001 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 24. Output Capacitance 100 Figure 25. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current MUN5311dw–9/13 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS – MUN5313DW1T1 PNP TRANSISTOR V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 0.1 100 0.01 0 10 20 30 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 27. V CE(sat) versus I C 1 100 Figure 28. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 0.8 10 0.6 1 0.4 0.1 0.2 0.01 0 0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 29. Output Capacitance 100 Figure 30. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 31. Input Voltage versus Output Current MUN5311dw–10/13 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 NPN TRANSISTOR V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 h FE , DC CURRENT GAIN (NORMALIZED) 300 250 0.1 200 150 0.01 100 50 0.001 0 20 40 60 80 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 I C , COLLECTOR CURRENT (mA) Figure 32. V CE(sat) versus I C 4 100 I C , COLLECTOR CURRENT (mA) Figure 33. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 3 2 10 1 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 1 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 34. Output Capacitance 10 Figure 35. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 36. Input Voltage versus Output Current MUN5311dw–11/13 MUN5311DW1T1 Series TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 PNP TRANSISTOR V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 h FE , DC CURRENT GAIN (NORMALIZED) 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 0.1 0.01 0.001 0 20 40 60 80 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 37. V CE(sat) versus I C 100 Figure 38. DC Current Gain 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 1 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 39. Output Capacitance 10 Figure 40. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 41. Input Voltage versus Output Current MUN5311dw–12/13 MUN5311DW1T1 TYPICAL ELECTRICAL CHARACTERISTICS – MUN5315DW1T1 Series h FE , DC CURRENT GAIN (NORMALIZED) 1000 h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 1.0 10 100 100 1.0 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 42. DC Current Gain–PNP Figure 43. DC Current Gain–NPN TYPICAL ELECTRICAL CHARACTERISTICS – MUN5316DW1T1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 1000 100 1.0 10 100 100 1.0 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 44. DC Current Gain–PNP Figure 45. DC Current Gain–NPN MUN5311dw–13/13