EM584161BA-85

EtronTech Features • Single power supply voltage of 1.65V to 1.95V • Power down features using CE1# and CE2 • Low power dissipation • Data retention supply voltage: 0.9V to 1.95V • Direct TTL compatibility for all input and output • W ide operating temperature range: -40°C to 85°C • Standby current @ VDD = 1.95 V ISB Maximum EM584161BA/BC-70/85 EM584161BA-70E/85E 8 µA 80 µA D GND DQ11 A17 A7 EM584161 256K x 16 Low Power SRAM Rev 2.0 Pin Configuration 48-Ball BGA (CSP), Top View 1 2 3 4 5 6 11/2003 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 DQ3 VDD E VDD DQ12 NC A16 DQ4 GN D F DQ14 DQ13 A14 A15 DQ5 DQ6 Ordering Information Part Number EM584161BC-70 EM584161BA-70 EM584161BA-70E EM584161BC-85 EM584161BA-85 EM584161BA-85E Speed 70 ns 70 ns 70 ns 85 ns 85 ns 85 ns ISB 8 µA 8 µA 80 µA 8 µA 8 µA 80 µA Package 6x8 BGA 8x10 BGA 8x10 BGA 6x8 BGA 8x10 BGA 8x10 BGA G DQ15 NC A12 A13 WE# DQ7 H NC A8 A9 A10 A11 NC Pin Description Symbol A0 - A17 DQ0 - DQ15 CE1#, CE2 OE# W E# LB#, UB# GND VDD NC Function Address Inputs Data Inputs / Outputs Chip Enable Inputs Output Enable Read / Write Control Input Data Byte Control Inputs Ground Power Supply No Connection Overview The EM584161 is a 4,194,304-bit SRAM organized as 262,144 words by 16 bits. It is designed with advanced CMOS technology. This Device operates from a single 1.65V to 1.95V power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-power mode when chip enable (CE1#) is asserted high or (CE2) is asserted low. There are three control inputs. CE1# and CE2 are used to select the device and for data retention control, and output enable (OE#) provides fast memory access. Data byte control pin (LB#,UB#) provides lower and upper byte access. This device is well suited to various microprocessor system applications where high speed, low power and battery backup are required. And, with a guaranteed operating range from -40°C to 85°C, the EM584161 can be used in environments exhibiting extreme temperature conditions. Etron Technology, Inc. No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C. TEL: (886)-3-5782345 FAX: (886)-3-5778671 Etron Technology, Inc., reserves the right to make changes to its products and specifications without notice. EtronTech Block Diagram EM584161 A0 MEMORY CELL ARRAY 2,048X128X16 (4,194,304) A17 VDD GND DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 SENSE AMP DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 COLUMN ADDRESS DECODER WE# UB# LB# OE# CE1# CE2 POWER DOWN CIRCUIT 2 Rev 2.0 Nov. 2003 EtronTech Operating Mode Mode CE1# CE2 OE# WE# LB# L Read L H L H H L L W rite L H X L H L L Output Deselect L H Standby X L X X X X H X X X X X H X H X High-Z High-Z H H H X UB# L L H L L H X High-Z High-Z DQ0~DQ7 DOUT High-Z DOUT DIN High-Z DIN DQ8~DQ15 DOUT DOUT High-Z DIN DIN High-Z EM584161 Note: X = don't care. H=logic high. L=logic low. Absolute Maximum Ratings Supply voltage, VDD Input voltages, VIN Input and output voltages, VI/O Operating temperature, TOPR Storage temperature, TSTRG Soldering Temperature (10s), TSOLDER Power dissipation, PD -0.5 to +2.5V -0.5 to +2.5V -0.5 to VDD +0.5V -40 to +85°C -65 to +150°C 240°C 0.6 W DC Recommended Operating Conditions (Ta=-40°C to 85°C) Symbol VDD VIH VIL Parameter Power Supply Voltage Input High Voltage Input Low Voltage Min. 1.65 1.4 - 0.2 (2) Typ. 1.8 − − − Max. 1.95 VDD+0.2 0.4 1.95 (1) Unit V V V V VDR Data Retention Supply Voltage Note: (1) Overshoot : 2.7V if pulse width ≤ 20ns (2) Undershoot : -1.0V if pulse width ≤ 20ns 0.9 3 Rev 2.0 Nov. 2003 EtronTech DC Characteristics (Ta = -40°C to 85°C, VDD = 1.65V to 1.95V) Symbol Parameter Operating current @ min cycle time Operating current @ max cycle time (1µs) Test Conditions CE1# = VIL and CE2 = VIH and IOUT = 0mA Other Input = VIH / VIL CE1# ≥ VDD -0.2V, or CE2 ≤ 0.2V, Others inputs ≤ 0.2V or ≥ VDD -0.2V IOH = -100 µA IOL = 100 µA Min. Typ. EM584161 Max. Unit IDD1 − − − − 15 mA IDD2 ISB 2 mA Standby current − − 8 µA VOH VOL Notes: Output HIGH Voltage Output LOW Voltage VDD – 0.2V − − − − 0.3 V V * Typical value are measured at Ta = 25°C. ** In standby mode with CE1# ≥ VDD - 0.2V, these limits are assured for the condition CE2 ≥ VDD - 0.2V or CE2 ≤ 0.2V. Capacitance (Ta = 25°C; f = 1 MHz) Parameter Input capacitance Output capacitance Symbol CIN Min − T yp − Max 10 Unit pF T est Conditions VIN = GND COUT 10 pF VOUT = GND − − Notes: This parameter is periodically sampled and is not 100% tested. 4 Rev 2.0 Nov. 2003 EtronTech Read Cycle EM584161 AC Characteristics and Operating Conditions(Ta = -40°C to 85°C, VDD = 1.65V to 1.95V) EM584161 Symbol tRC tAA tCO1 tCO2 tOE tBA tLZ tOLZ tBLZ tHZ tOHZ tBHZ tOH Write Cycle EM584161 Symbol tWC tWP tCW tBW tAS tWR tWHZ tOW tDS tDH Write cycle time Write pulse width Chip Enable to end of write Data Byte Control to end of Write Address setup time Write Recovery time WE# Low to Output in High-Z WE# High to Output in Low-Z Data Setup Time Data Hold Time Parameter -85 -70 Unit − − − − − − 30 − − − ns Min Max Min Max 85 55 70 70 0 0 − 5 35 0 − − − − − − 35 − − − 70 55 60 60 0 0 − 5 30 0 Read cycle time Address access time Chip Enable (CE1#) Access Time Chip Enable (CE2) Access Time Output enable access time Data Byte Control Access Time Chip Enable Low to Output in Low-Z Output enable Low to Output in Low-Z Data Byte Control Low to Output in Low-Z Chip Enable High to Output in High-Z Output Enable High to Output in High-Z Data Byte Control High to Output in High-Z Output Data Hold Time Parameter -85 -70 Unit − 70 70 70 35 35 − − − 25 25 25 − ns Min Max Min Max 85 − − − − − 10 3 5 − − − 10 − 85 85 85 45 45 − − − 35 35 35 − 70 − − − − − 10 3 5 − − − 10 AC Test Condition • Output load : 30pF + one TTL gate • Input pulse level : 0.2V, VDD-0.2V • Timing measurements : 0.5 x VDD • tR, tF : 5ns 5 Rev 2.0 Nov. 2003 EtronTech Read Cycle (See Note 1) t RC EM584161 A ddr ess t AA t OH t CO1 CE 1# CE2 t CO2 t HZ t OE O E# t OH Z t BA UB# , LB# t BLZ t OLZ t LZ t BHZ D O UT VALID DATA OU T 6 Rev 2.0 Nov. 2003 EtronTech Write Cycle1 (WE# Controlled)(See Note 4) tWC EM584161 Address t AS tWP tW R W E# t CW CE1# CE2 t CW t BW UB# , LB# t W HZ t OW D OUT (See Note2) (See Note3) t DS t DH D IN (See Note 5) VALID DATA IN (See Note 5) 7 Rev 2.0 Nov. 2003 EtronTech Write Cycle 2 (CE1# Controlled)(See Note 4) tW C EM584161 Addres s t AS tWP tW R W E# t CW CE1# CE2 t CW t BW UB# , LB# t BLZ t W HZ DOUT t LZ t DS t DH DIN (See Note 5) VALID DATA IN 8 Rev 2.0 Nov. 2003 EtronTech Write Cycle 3 (CE2 Controlled)(See Note 4) tW C EM584161 Addres s t AS tWP tW R W E# t CW CE1# CE2 t CW t W HZ DO UT t LZ t DS t DH DIN (See Note 5) VALID DATA IN 9 Rev 2.0 Nov. 2003 EtronTech Write Cycle4 (UB#, LB# Controlled)(See Note 4) tW C EM584161 Addres s t AS tWP tW R W E# t CW CE1# CE2 t CW t BW UB# , LB# t BLZ t W HZ DO UT t LZ t DS t DH DIN (See Note 5) VALID DATA IN Note: 1. WE# remains HIGH for the read cycle. 2. If CE1# goes LOW (or CE2 goes HIGH) with or after WE# goes LOW, the outputs will remain at high impedance. 3. If CE1# goes HIGH (or CE2 goes LOW) coincident with or before WE# goes HIGH, the outputs will remain at high impedance. 4. If OE# is HIGH during the write cycle, the outputs will remain at high impedance. 5. Because I/O signals may be in the output state at this time, input signals of reverse polarity must not be applied. 10 Rev 2.0 Nov. 2003 EtronTech Data Retention Characteristics (Ta = -40°C to 85°C) Symbol Data Retention Supply Voltage Parameter CE1# ≥ VDD - 0.2V, CE2 ≤ 0.2V, VIN ≥ VDD - 0.2V or VIN ≤ 0.2V VDD = 0.9V, CE1# ≥ VDD - 0.2V, CE2 ≤ 0.2V, VIN ≥ VDD - 0.2V or VIN ≤ 0.2V Min EM584161 Typ Max Unit VDR 0.9 − 1.95 V IDR tSDR tRDR Data Retention Current − 0 tRC − − − 4.0 − − µA ns ns Chip Deselect to Data Retention Mode Time Recovery Time CE1# Controlled Data Retention Mode t SDR V DD 1.65V Data Retention Mode t RDR 1 .4V V DR CE1#, LB#/UB# GND Note 1 CE2 Controlled Data Retention Mode V DD 1.6 5V CE2 t SDR t RD R D a t a R e t en t i o n M o d e VD R 0.4 V GND Note 2 Note: 1. CE1# ≥ VDD – 0.2V or UB# = LB# ≥ VDD – 0.2V 2. CE2 ≤ 0.2V 11 Rev 2.0 Nov. 2003 EtronTech Package Diagrams 48-Ball (6mm x 8mm) BGA Units in mm TOP VIEW EM584161 BOTTOM VIEW 0.10 S 0.25 S C C PIN 1 CORNER A B PIN 1 CORNER 0.30 3 4 5 6 6 5 4 3 0.05(48X) 2 1 1 2 -B0.75 3.75 -A0.20(4X) 0.10 -CSEATING PLANE 12 Rev 2.0 Nov. 2003 EtronTech Package Diagrams 48-Ball (8mm x 10mm) BGA Units in mm TOP VIEW EM584161 BO TT OM VIEW 0.10 S 0.25 S C C PIN 1 CO RNE R A B PIN 1 CO RNE R 0.30 3 4 5 6 6 5 4 3 0.05(48X) 2 1 1 2 A B C A B C 5.25 0.1 D E D E 10 .0 0.75 F G H F G H -B0.75 -A3.75 8.0 0.20(4X) 0.10 0.02 0.05 0.52 0.25 D -CSEATIN G PLANE D 0.10 1.20 MAX 0.36 0.02 0.05 13 Rev 2.0 Nov. 2003