ESN26A030MK

Eudyna GaN-HEMT 30W Preliminary FEATURES ・High Voltage Operation : VDS=50V ・High Power : 46.5dBm (typ.) @ P3dB ・High Efficiency: 60%(typ.) @ P3dB ・Linear Gain : 15.0dB(typ.) @ f=2.6GHz ・Proven Reliability ES/EGN26A030MK High Voltage - High Power GaN-HEMT DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Condition RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item Symbol VDS IGF IGR Tch DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature r P im l e Condition RG=15 Ω RG=15 Ω Vp VGDO P3dB ηd GL Rth VDS VGS　　　　　 Tc=25oC　　　　 Pt Tstg Tch ry a in Rating Unit V V W oC oC 120 　 　 -5 75 -65 to +175 250 Limit 50 -2.2 200 Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Gate-Drain Breakdown Voltage 3dB Gain Compression Power Drain Efficiency Linear Gain Thermal Resistance VDS=50V IDS=11mA IGS=- 5.6 mA VDS=50V IDS(DC)=200mA f=2.6GHz Channel to Case TBD -1.0 TBD Limit Typ. Max. -2.0 -350 46.5 60 15.0 2.5 -3.5 3.0 Unit V V 　 dBm % dB oC/W Edition 1.2 Dec. 2005 1 ES/EGN26A030MK High Voltage - High Power GaN-HEMT Output Power vs. Frequency VDS=50V IDS(DC)=200mA Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=200mA f=2.6GHz 50 48 46 Output Power [dBm] Output Power [dBm] 44 42 40 38 36 34 32 30 2.45 2.50 2.55 2.60 2.65 2.70 2.75 50 48 46 44 42 40 38 36 34 32 30 100 90 80 70 60 Drain Effciency [%] Frequency [GHz] Pin=20dBm Pin=32dBm Pin=24dBm Pin=36dBm r P 80 70 60 50 40 30 20 10 0 Total Power Dissipasion [W] im l e Pin=28dBm a in 19 21 ry 29 31 33 35 37 Input Power [dBm] 50 40 30 20 10 0 23 25 27 Power Derating Curve 0 50 100 150 200 o 250 300 Case Temperature [ C] Edition 1.2 Dec. 2005 2 ES/EGN26A030MK High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=200mA, f=1 to 4 GHz, Zl = Zs = 50 ohm +50j +25j 10 Ω 25 Ω +100j +10j 2.6GHz 50 Ω +250j 0 2.6GHz ∞ -10j -250j -25j -50j -100j S 11 S22 r P +90° ±180° 6 Scale for |S21| 0.06 Scale for |S 12| -90° im l e S1 2 S2 1 2.6GHz Freq S11 S21 S12 S22 [GHz] MAG ANG MAG ANG MAG ANG MAG ANG 1.0 0.905 175.7 3.420 31.4 0.006 -17.2 0.684 -128.3 1.1 0.904 174.4 3.076 26.4 0.005 -11.6 0.710 -131.8 1.2 0.906 173.0 2.791 21.9 0.005 -10.1 0.735 -135.2 1.3 0.906 171.6 2.573 17.4 0.004 -9.3 0.755 -138.2 1.4 0.904 170.4 2.418 13.3 0.004 0.3 0.773 -140.5 1.5 0.901 168.7 2.267 9.1 0.004 3.1 0.788 -142.9 1.6 0.897 167.2 2.173 4.9 0.004 9.2 0.800 -145.0 1.7 0.889 166.0 2.096 0.4 0.004 14.9 0.813 -147.1 1.8 0.881 164.3 2.070 -4.2 0.004 22.2 0.822 -148.8 1.9 0.869 162.8 2.041 -8.6 0.005 23.4 0.835 -150.2 2.0 0.855 161.0 2.051 -14.1 0.005 27.1 0.846 -151.8 2.1 0.834 159.2 2.092 -20.1 0.006 31.6 0.853 -152.9 2.2 0.805 157.3 2.166 -26.6 0.006 24.6 0.862 -153.8 2.3 0.770 155.5 2.276 -34.9 0.007 23.1 0.869 -154.9 2.4 0.717 154.1 2.374 -44.1 0.007 15.1 0.880 -155.8 2.5 0.654 154.2 2.504 -55.8 0.009 7.4 0.896 -156.5 2.6 0.589 157.4 2.568 -69.9 0.008 -5.0 0.909 -157.9 2.7 0.554 164.7 2.562 -85.6 0.008 -18.4 0.930 -159.2 2.8 0.582 173.0 2.401 -102.6 0.007 -37.3 0.944 -161.6 2.9 0.654 176.7 2.112 -118.1 0.006 -54.1 0.948 -163.7 3.0 0.730 176.4 1.814 -131.9 0.004 -75.8 0.952 -165.9 3.1 0.791 173.9 1.519 -143.5 0.003 -103.7 0.938 -168.0 3.2 0.835 171.2 1.278 -152.3 0.002 -150.7 0.935 -169.5 3.3 0.867 168.1 1.085 -160.1 0.003 166.8 0.929 -171.5 3.4 0.886 165.0 0.918 -166.8 0.003 140.6 0.923 -173.0 3.5 0.900 162.0 0.796 -172.9 0.005 123.7 0.919 -174.6 3.6 0.909 159.3 0.694 -178.7 0.005 110.1 0.916 -176.3 3.7 0.916 156.8 0.612 176.9 0.006 103.2 0.910 -177.8 3.8 0.924 154.3 0.543 171.8 0.007 96.2 0.911 -179.4 0° 3.9 0.920 152.0 0.484 168.0 0.007 91.7 0.898 179.0 4.0 0.916 149.7 0.437 164.0 0.009 87.0 0.901 177.6 ry a in 2.6GHz Edition 1.2 Dec. 2005 3 ES/EGN26A030MK High Voltage - High Power GaN-HEMT MK Package Outline Metal-Ceramic Hermetic Package r P im l e ry a in PIN ASSIGNMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm Edition 1.2 Dec. 2005 4