F0100604B

02.03.04 ♦ Features • Low voltage of +5.0 /-3.5V power supply • 400 Ω high transimpedance • Typical 9.0 GHz broad bandwidth • 17.0 dB high gain • Over 18 dB wide dynamic range • Excellent equivalent input noise current of 10 pA/Hz1/2 F0100604B 10 Gb/s Receiver Transimpedance Amplifier ♦ Applications • Preamplifier of an optical receiver circuit for STM-64/OC-192 (10 Gb/s) ♦ Functional Description The F0100604B is a stable GaAs integrated transimpedance amplifier capable of 17.0 dB gain at a typical 9.0 GHz 3 dB-cutoff-frequency, making it ideally suited for a 10 Gb/s optical receiver circuit, for example, OC-192/STM-64, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier can not operate with the maximum performance owing to parasitic capacitance of the package. 10 Gb/s Transimpedance Amplifier ♦ Absolute Maximum Ratings F0100604B Ta=25 °C, unless specified Parameter Supply Voltage Supply Voltage Supply Current Supply Current Ambient Operating Temperature Storage Temperature Symbol VDD VSS IDD ISS Ta Tstg Value -0.5 to 7.0 -4.0 to +0.5 160 -60 -40 to +90 -50 to +125 Units V V mA mA °C °C ♦ Recommended Operating Conditions Ta=25 °C, VDD=+5.0 V, VSS=-3.5 V, unless specified Value Parameter Supply Voltage Supply Voltage Ambient Operating Temperature Symbol Min. VDD VSS Ta 4.75 -3.68 0 Max. 5.25 -3.32 70 V V °C Units ♦ Electrical Characteristics Ta=25 °C, VDD=+5.0 V, VSS=-3.5 V, unless specified Value Parameter Symbol IDD ISS Gain -3dB High Frequency Cut-off Input Impedance Trans-Impedance Output Voltage Input Voltage RI +50 ×10 2 S21 20 Test Conditions Min. Typ. 100 30 17.0 9.0 55 400 1.6 0.2 Max. PIN=-20dBm f=1GHz, RL=50Ω PIN=-20dBm RL=50Ω f=1GHz *1 f=1GHz DC DC - Units Supply Current DC mA S21 FC RI ZT VO VI dB GHz Ω Ω V V *1 ZT= 10 Gb/s Transimpedance Amplifier ♦ Block Diagram F0100604B VDD Level Shift IN GND VSS Buffer OUT ♦ Die Pad Description VDD VSS GND IN OUT Supply Voltage Supply Voltage Ground Input Output 10 Gb/s Transimpedance Amplifier ♦ Die Pad Assignments F0100604B A (10) (9) (8) (7) (11) (6) (12) (5) (4) (13) (1) O (2) (3) No. (1) (2) (3) (4) (5) (6) (7) (8) (9) Symbol GND VSS GND GND OUT GND GND VDD VDD Center Coordinates(µm) (375,100) (600,100) (970,100) (1280,470) (1280,690) (1280,960) (1265,1280) (1000,1280) (500,1280) No. (10) (11) (12) (13) Symbol VDD GND IN GND Center Coordinates(µm) (200,1280) (100,960) (100,690) (100,320) O A (0,0) (1380,1380) 10 Gb/s Transimpedance Amplifier ♦ Test Circuits 1) AC Characteristics F0100604B 50 ‰ Network Analyzer 50 ‰ Pin=-20 dBm f=130 MHz ~20GHz IN VDD VSS OUT DUT Prober 2) Sensitivity Characteristics VPD 5V 0.022µF E/O Converter Optical Attenuater VDD PD DUT VSS 5V 0.022µF -3.5V 0.022µF Pulse Pattern Generator CLK 0.022µF Post Amp. Bit Error Rate Tester 10 Gb/s Transimpedance Amplifier ♦ Examples of AC Characteristics (1) Gain (S21) F0100604B (2) Input Noise Current Density & Transimpedance G G OW PR NT N OW PRIINTIIN N N 10 Gb/s Transimpedance Amplifier ♦ Typical Bit Error Rate F0100604B 10 -3 VDD=VPD=4.75V VDD=VPD=5.00V VDD=VPD=5.25V 10 -4 Bit Error Rate (1/s) 10Gbps, PRBS223-1 10-5 10-6 10 -7 10-8 10 -9 10-10 10 -11 10-12 -24 -23 -22 -21 -20 -19 -18 -17 -16 Optical Input Power (dBm) CP D=0.25pF 10 Gb/s Transimpedance Amplifier ♦ General Description F0100604B A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo-current from a PIN photo diode (PD). The performance in tems of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully . Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current flows into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration. ♦ Die-Chip Description The F0100604B is shipped like the die-chip described above. The die thickness is typically 600 µm ± 20 µm with the available pad size uncovered by a passivation film of 95 µm square. The material of pads is TiW/Pt/Au and the backside is metalized by Ti/Au. ♦ Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 °C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150 °C by a ball-bonding machine is effective. 10 Gb/s Transimpedance Amplifier ♦ Quality Assurance F0100604B For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owing to dieshipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without in any problems according to SEI’s authorized rule. A microscope inspection is conducted in conformance with the MIL-STD883C Method 2010.7. ♦ Precautions Owing to their small dimensions, the GaAs FET’s from which the F0100604B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment. Electron Device Department