FHX04X

FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature *Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. Symbol VDS VGS Pt* Tstg Tch Rating 3.5 -3.0 180 -65 to +175 175 Unit V V mW °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure FHX04X Associated Gain Noise Figure FHX05X Associated Gain Noise Figure FHX06X Associated Gain Maximum Available Gain Thermal Resistance Symbol IDSS gm Vp VGSO NF Gas NF Gas NF Gas Ga(max) Same as above, Gain matched Rth Channel to Case Test Conditions VDS = 2V, VGS = 0V VDS = 2V, IDS = 10mA VDS = 2V, IDS = 1mA IGS = -10µA Min. 15 35 -0.2 -3.0 9.5 9.5 9.5 11.0 Limit Typ. Max. 30 60 45 -0.7 -1.5 0.75 0.85 10.5 0.9 1.1 10.5 1.1 1.35 10.5 12.0 220 300 Unit mA mS V V dB dB dB dB dB dB dB °C/W VDS = 2V IDS = 10mA f = 12GHz Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.3 October 2004 1 FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips POWER DERATING CURVE 200 Total Power Dissipation (W) 150 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 40 Drain Current (mA) 30 VGS = 0V 100 20 -0.2V 50 10 -0.4V -0.6V -0.8V 3 0 0 50 100 150 200 0 1 2 4 Ambient Temperature (°C) Drain-Source Voltage (V) NF & Gas vs. IDS 3 Noise Figure (dB) f=12GHz VDS=2V 2 Gas 12 Associated Gain (dB) 11 10 9 1 NF 8 7 0 10 20 Drain Current (mA) 30 Output Power (dBm) OUTPUT POWER vs. INPUT POWER f=12GHz VDS=2V 10 Noise Figure Matched IDS=10mA Gain Matched IDS=15mA 5 0 -10 -5 0 5 Input Power (dBm) 2 FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips +j50 +j100 +j25 12 S11 S22 +90° S21 S12 +j250 +j10 4 2 1 6 8 10 14 22 16 20 18 20 18 22 16 14 810 6 1 0.1 GHZ 0 10 22 25 50Ω 100 201816 SCALE FOR |S12| -j10 20 18 16 14 12 22 8 141210 1 0.1 GHZ 1 2 4 2 6 5 0.1 GHZ 180° 4 3 0.1 GHZ 2 1 .02 .04 .06 .08 0° SCALE FOR |S21| -j250 4 10 8 6 -j25 -j50 -j100 FREQUENCY (MHZ) 100 500 1000 2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 S11 MAG 1.000 .999 .996 .983 .928 .877 .811 .748 .694 .649 .614 .588 .570 ANG -0.9 -4.7 -9.5 -18.8 -37.0 -54.0 -59.3 -84.5 -98.2 -111.1 -123.2 -134.6 -145.4 S-PARAMETERS VDS = 2V, IDS = 10mA S21 S12 MAG ANG MAG ANG 3.721 3.717 3.705 3.658 3.489 3.255 2.999 2.750 2.521 2.319 2.142 1.988 1.853 179.2 176.0 172.0 164.1 149.0 135.1 122.5 111.2 101.1 92.0 83.5 75.9 68.8 .001 .007 .013 .026 .049 .068 .082 .093 .101 .108 .114 .121 .130 89.5 87.7 86.4 81.0 72.3 66.0 60.3 57.3 55.2 54.6 55.0 56.2 57.8 -90° S22 MAG .606 .605 .604 .598 .576 .547 .516 .485 .457 .432 .410 .391 .373 ANG -0.4 -2.1 -4.2 -8.3 -16.0 -22.9 -28.9 -34.2 -39.1 -43.7 -48.4 -53.2 -58.4 NOTE:* The data includes bonding wires. n: number of wires Gate n=2 (0.3mm length, 20um Dia Au wire) Drain n=2 (0.3mm length, 20um Dia Au wire) Source n=4 (0.3mm length, 20um Dia Au wire) Ga (max) & |S21|2 vs. FREQUENCY 15 VDS=2V IDS=10mA 10 Gain (dB) Ga (max) NOISE PARAMETERS VDS=2V, IDS=10mA Freq. (GHz) 2 4 6 8 10 12 14 16 18 20 Γopt (MAG) (ANG) 0.80 0.74 0.68 0.63 0.58 0.52 0.47 0.42 0.38 0.33 16 31 46 61 75 89 102 114 126 137 NFmin (dB) 0.33 0.35 0.44 0.53 0.63 0.72 0.84 0.97 1.09 1.22 Rn/50 0.50 0.45 0.40 0.30 0.23 0.18 0.14 0.12 0.10 0.09 |S21|2 5 4 6 8 10 12 Frequency (GHz) 20 30 3 FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips CHIP OUTLINE 50 90 (Unit: µm) 75 154 75 50 90 450±20 Die Thickness: 100±20µm For further information please contact: CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte Ltd. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170 4 75 350±20