FHX13LG

FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB (Typ.)@f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package • Tape and Reel Packaging Available DESCRIPTION The FHX13LG, FHX14LG is a Super High Electron Mobility Transistor(SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are packaged in cost effective, low parasitic, hermetically sealed metal-ceramic package for high volume telecommunication, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. TM ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature *Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. Symbol VDS VGS Pt* Tstg Tch Rating 3.5 -3.0 180 -65 to +175 175 Unit V V mW °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Noise Figure Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG Note: RF parameters for LG devices are measured on a sample basis as follows: Lot qty. or to to or Sample qty. 125 200 315 500 Accept/Reject (0,1) (0,1) (1,2) (1,2) Symbol IDSS gm Vp VGSO NF Gas NF FHX14LG Gas Rth Condition VDS = 2V, VGS =0V VDS = 2V, IDS =10mA VDS = 2V, IDS =1mA IGS = -10µA VDS = 2V, IDS = 10mA, f = 12GHz Channel to Case Min. 10 35 -0.1 -3.0 11.0 11.0 - Limit Typ. Max. 30 60 50 -0.7 -1.5 0.45 13.0 0.55 13.0 300 0.50 0.60 400 Unit mA mS V V dB dB dB dB °C/W FHX13LG 1200 1201 3201 10001 less 3200 10000 over Edition 1.1 July 1999 1 FHX13LG, FHX14LG Super Low Noise HEMT POWER DERATING CURVE Total Power Dissipation (mW) 200 150 100 50 0 LG 0 50 100 150 200 Ambient Temperature (°C) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 40 Drain Current (mA) 30 VGS =0V 20 -0.2V 10 -0.4V -0.6V -0.8V 3 0 1 2 4 Drain-Source Voltage (V) 2 FHX13LG, FHX14LG Super Low Noise HEMT NF & Gas vs. FREQUENCY FHX13LG 3.0 VDS=2V IDS=10mA Noise Figure (dB) Gas 2 10 Noise Figure (dB) 3 15 Associated Gain (dB) 2.5 2.0 1.5 1.0 NF 0.5 NF 0 4 6 8 10 12 Frequency (GHz) 20 0 10 20 30 9 NF & Gas vs. IDS FHX13LG f=12GHz VDS=2V 14 Gas Associated Gain (dB) 13 12 11 10 1 5 Drain Current (mA) NF & Gas vs. TEMPERATURE FHX13LG 1.5 f=12GHz VDS=2V IDS=10mA 1.0 Gas 10 15 Associated Gain (dB) Output Power (dBm) OUTPUT POWER vs. INPUT POWER FHX13LG 25 f=12GHz 15 VDS=2V IDS=10mA Noise Figure (dB) 10 0.5 NF 5 5 0 100 200 300 400 -10 -5 0 5 10 Ambient Temperature (°K) Input Power (dBm) 3 FHX13LG, FHX14LG Super Low Noise HEMT TYPICAL NOISE FIGURE CIRCLE FHX13LG +j50 +j100 +j25 1.5 +j10 2.5 3.0 2.0 Γopt 10 25 1.0 +j250 0 50 100 f = 12 GHz VDS = 2V IDS = 10mA Γopt = 0.61∠150° Rn/50 = 0.04 NFmin = 0.45dB -j10 -j250 -j25 -j50 -j100 Ga(max) & |S21|2 vs. FREQUENCY 20 VDS = 2V IDS = 10mA 15 Gain (dB) Ga(max) 10 |S21|2 5 0 4 6 8 10 12 20 Frequency (GHz) NOISE PARAMETERS FHX13LG VDS=2V, IDS=10mA Freq. (GHz) 2 4 6 8 10 12 14 16 18 Γopt (MAG) (ANG) 0.96 0.92 0.86 0.79 0.71 0.61 0.50 0.38 0.24 29 57 83 107 129 150 168 -175 -161 NFmin (dB) 0.33 0.34 0.35 0.37 0.40 0.45 0.53 0.63 0.83 Rn/50 0.22 0.20 0.15 0.11 0.07 0.04 0.04 0.06 0.10 4 FHX13LG, FHX14LG Super Low Noise HEMT +j50 +j100 +j25 20 GHz 20 GHz S11 S22 +90° S21 S12 +j250 +j10 15 1.0 GHz 6 4 5 5 1.0 GHz 1 0.02 10 10 15 15 0 15 25 50Ω 100 250 1.0 GHz 180° 8 2 SCALE FOR |S21| 20 GHz 0.04 0.06 0.08 0° -j10 10 5 -j250 SCALE FOR |S12| 10 1.0 GHz 20 GHz -j25 5 -j100 -j50 -90° S-PARAMETERS FHX13/14LG VDS = 2V, IDS = 10mA FREQUENCY (MHZ) 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 S11 MAG 0.988 0.956 0.908 0.862 0.811 0.763 0.727 0.701 0.682 0.659 0.636 0.618 0.608 0.596 0.585 0.564 0.543 0.525 0.506 0.470 S21 ANG -20.0 -39.5 -58.1 -75.5 -91.6 S12 ANG 160.1 141.0 123.0 105.9 89.7 74.4 60.0 46.4 33.8 21.4 9.3 -3.3 -14.8 -26.6 -38.3 -50.7 -63.6 -77.1 -91.4 S22 ANG 75.7 63.3 50.1 39.0 29.3 21.0 13.2 7.9 3.5 -0.0 -2.6 -5.2 -5.7 -7.8 -9.7 -12.8 -17.6 -24.7 -33.1 -43.7 MAG 5.327 5.133 4.851 4.534 4.213 3.886 3.582 3.300 3.078 2.899 2.748 2.593 2.466 2.366 2.279 2.244 2.217 2.185 2.143 2.089 MAG 0.015 0.028 0.039 0.048 0.053 0.056 0.057 0.056 0.055 0.055 0.054 0.054 0.054 0.055 0.056 0.058 0.061 0.063 0.063 0.061 MAG 0.574 0.560 0.539 0.522 0.502 0.488 0.487 0.498 0.515 0.531 0.544 0.561 0.590 0.619 0.654 0.677 0.701 0.727 0.748 0.763 ANG -16.3 -32.1 -47.3 -62.0 -75.6 -89.6 -103.0 -114.9 -125.0 -134.4 -144.0 -155.1 -164.0 -172.4 -179.7 172.6 163.4 154.1 143.6 137.2 -107.1 -121.1 -133.3 -144.1 -154.2 -164.4 -175.4 175.5 166.6 158.3 148.8 138.2 127.3 116.2 106.5 -105.4 Download S-Parameters, click here 5 FHX13LG, FHX14LG Super Low Noise HEMT Case Style "LG" Metal-Ceramic Hermetic Package 4.78±0.5 1.5±0.3 (0.059) 1.78±0.15 1.5±0.3 (0.07) (0.059) 1.5±0.3 (0.059) 1.0 (0.039) 1 1.78±0.15 1.5±0.3 (0.07) (0.059) 4.78±0.5 4 3 2 0.5 (0.02) 1.3 Max (0.051) 1. 2. 3. 4. 0.1 (0.004) Gate Source Drain Source Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 TM SuperHEMT is a trademark of Fujitsu Limited. 6