FHX45X

FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB (Typ.)@f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Gate Drain DESCRIPTION The FHX45X is a Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general purpose, ultra-low noise and high gain amplifiers in the 2-18GHz frequency range. The device is well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature *Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 2 volts. 2. The forward and reverse gate currents should not exceed 0.1 and -0.075 mA respectively with gate resistance of 4000Ω. 3. The operating channel temperature (Tch) should not exceed 80°C. Gate Source Symbol VDS VGS Pt* Tstg Tch Rating 3.5 -3.0 290 -65 to +175 175 Unit V V mW °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Thermal Resistance Symbol IDSS gm Vp VGSO NF Gas Rth Condition VDS = 2V, VGS =0V VDS = 2V, IDS =10mA VDS = 2V, IDS =1mA IGS = -10µA Min. 10 45 -0.1 -3.0 Limit Typ. Max. 40 65 -1.0 0.55 12.0 155 85 -2.0 0.65 200 Unit mA mS V V dB dB °C/W VDS = 2V, IDS = 10mA, f = 12GHz 10.0 Channel to Case - Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.2 July 1999 1 FHX45X GaAs FET & HEMT Chips POWER DERATING CURVE 350 Total Power Dissipation (W) 300 Drain Current (mA) 250 200 150 100 50 0 0 50 100 150 200 0 40 -0.2V 30 -0.4V 10 -0.6V -0.8V -1.0V 1 2 3 4 Drain-Source Voltage (V) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 50 VGS =0V Ambient Temperature (°C) NF & Gas vs. IDS 4 f=12GHz VDS=2V Gas Associated Gain (dB) 3 Noise Figure (dB) 12 11 2 10 9 1 NF 8 7 20 30 14 13 Noise Figure (dB) 3 NF & Gas vs. Frequency VDS=2V IDS=10mA 15 Gas 2 10 1 NF 0 2 4 6 8 10 12 20 Frequency (GHz) 5 0 0 10 Drain Current (mA) FHX45X NOISE PARAMETERS VDS=2V, IDS=10mA Freq. (GHz) 2 4 6 8 10 12 14 16 18 Γopt (MAG) (ANG) 0.83 0.72 0.65 0.62 0.61 0.60 0.58 0.55 0.47 12.7 28.2 45.2 62.6 79.4 94.5 106.7 115.0 118.4 NFmin (dB) 0.28 0.30 0.34 0.39 0.47 0.55 0.67 0.81 1.00 Rn/50 Ga (max) & |S21|2 vs. FREQUENCY 20 VDS=2V IDS=10mA 15 Ga (max) 0.21 0.19 0.17 0.15 0.13 0.11 0.10 0.09 0.09 Gain (dB) 10 |S21|2 5 0 4 6 8 1012 20 Frequency (GHz) 2 Associated Gain (dB) FHX45X GaAs FET & HEMT Chips +j50 +j25 +j100 S11 S22 +90° S21 S12 +j250 +j10 1 5 18 GHz 10 5 15 10 18 GHz 1 0.04 0.08 0.12 0.1 GHZ 0.1 GHZ 1 0.16 0 10 25 18 GHz 15 50Ω 100 0.1 GHZ 1 1 0.1 GHZ 180° SCALE FOR |S12| 0° 18 GHz 15 10 10 5 5 SCALE FOR |S21| -j10 -j250 2 3 4 5 -j25 -j50 -j100 -90° FREQUENCY (MHZ) 100 500 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 S11 MAG 1.000 0.998 0.991 0.966 0.928 0.883 0.835 0.788 0.744 0.705 0.671 0.642 0.618 0.599 0.584 0.573 0.566 0.561 0.560 0.562 ANG -1.4 -6.8 -13.6 -27.0 -39.9 -52.1 -63.6 -74.5 -84.8 -94.5 -103.8 -112.7 -121.1 -129.3 -137.1 -144.6 -151.7 -158.5 -165.1 -171.3 Gate Drain S-PARAMETERS VDS = 2V, IDS = 10mA S21 S12 MAG ANG MAG ANG 6.039 6.025 5.981 5.818 5.572 5.277 4.959 4.640 4.333 4.046 3.782 3.542 3.324 3.126 2.948 2.786 2.639 2.504 2.382 2.268 178.9 174.4 168.8 157.8 147.4 137.7 128.8 120.5 112.9 105.8 99.3 93.2 87.5 82.1 77.0 72.1 67.4 62.9 58.5 54.3 .002 .009 .017 .033 .048 .060 .070 .078 .085 .090 .094 .097 .100 .103 .106 .109 .112 .116 .120 .125 89.3 86.4 82.8 75.9 69.6 64.1 59.3 55.4 52.3 49.9 48.1 46.9 46.2 46.0 46.2 46.7 47.3 48.2 49.1 50.0 S22 MAG .533 .531 .528 .516 .497 .475 .452 .430 .408 .389 .372 .358 .346 .336 .329 .323 .319 .317 .317 .318 ANG -0.9 -4.6 -9.2 -18.0 -26.4 -34.2 -41.4 -48.0 -54.0 -59.6 -64.9 -70.0 -74.9 -79.7 -84.4 -89.0 -93.7 -98.4 -103.1 -107.8 NOTE:* The data includes bonding wires. n: number of wires n=2 (0.3mm length, 25µm Dia Au wire) n=2 (0.3mm length, 25µm Dia Au wire) Download S-Parameters, click here Source n=4 (0.3mm length, 25µm Dia Au wire) 3 FHX45X GaAs FET & HEMT Chips CHIP OUTLINE 60 90 (Unit: µm) Drain 350±20 160 Source 70 50 100 450±20 Die Thickness: 100±20µm For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 SuperHEMT TM is a trademark of Fujitsu Limited. 4 75 Gate Gate 65