FLC087XP

FLC087XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 28.5dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 31.5%(Typ.) Proven Reliability Drain DESCRIPTION The FLC087XP chip is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Rating 15 -5 Tc = 25°C 4.16 -65 to +175 175 Unit V V W °C °C Gate Source Source Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with gate resistance of 400Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Power-added Efficiency Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB ηadd Rth Channel to Case VDS = 10V IDS ≈ 0.6IDSS f = 8GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 200mA VDS = 5V, IDS = 15mA IGS = -15µA Min. 75 -1.0 -5 27.5 6.0 Limit Typ. Max. 300 150 -2.0 28.5 7.0 31.5 25 450 -3.5 36 Unit mA mS V V dBm dB % °C/W Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.3 July 1999 1 FLC087XP GaAs FET & HEMT Chips POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE Total Power Dissipation (W) 5 Drain Current (mA) 300 4 3 2 1 2 4 6 VGS =0V -0.5V 200 -1.0V 100 -1.5V -2.0V 0 50 100 150 200 8 10 Case Temperature (°C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER 30 Output Power (dBm) VDS=10V 28 IDS≈0.6IDSS 26 24 22 20 18 16 12 14 16 18 20 22 24 Input Power (dBm) ηadd f=4GHz 8GHz Pout f=4GHz 8GHz P1dB & ηadd vs. VDS f=8GHz IDS≈0.6IDSS 30 P1dB (dbm) 29 ηadd ηadd (%) 30 20 10 27 26 8 P1dB 20 10 9 10 Drain-Source Voltage (V) 2 ηadd (%) 40 28 30 FLC087XP GaAs FET & HEMT Chips FREQUENCY (MHZ) 100 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 8500 9000 9500 10000 10500 11000 11500 12000 S11 MAG .998 .965 .914 .883 .866 .857 .852 .848 .846 .845 .845 .845 .845 .845 .846 .847 .847 .848 .849 .850 .852 .853 .854 .855 .857 ANG -11.7 -54.6 -92.8 -116.8 -132.5 -143.5 -151.7 -158.1 -163.4 -167.9 -171.8 -175.3 -178.4 178.7 176.1 173.6 171.2 169.0 166.8 164.7 162.7 160.8 158.9 157.1 155.3 Gate Drain S-PARAMETERS VDS = 10V, IDS = 200mA S21 S12 MAG ANG MAG ANG 9.704 8.567 6.593 5.088 4.067 3.363 2.856 2.478 2.186 1.954 1.765 1.608 1.476 1.362 1.264 1.177 1.099 1.030 .967 .909 .856 .806 .760 .716 .675 172.7 145.8 121.3 104.7 92.4 82.4 73.7 65.9 58.6 51.8 45.2 38.9 32.7 26.7 20.8 15.0 9.3 3.7 -1.9 -7.4 -12.8 -18.1 -23.4 -28.7 -33.9 .006 .026 .039 .046 .048 .050 .051 .051 .052 .052 .052 .052 .053 .053 .053 .053 .053 .053 .053 .053 .054 .054 .054 .054 .055 83.8 61.3 42.4 31.3 24.5 20.0 16.9 14.6 12.9 11.5 10.5 9.6 8.9 8.4 8.0 7.6 7.3 7.1 7.0 6.9 6.8 6.7 6.7 6.7 6.6 S22 MAG .510 .467 .399 .355 .332 .323 .320 .323 .330 .338 .349 .362 .375 .390 .406 .422 .439 .456 .474 .492 .511 .529 .548 .567 .585 ANG -4.7 -21.1 -34.2 -42.2 -48.2 -53.7 -59.0 -64.3 -69.7 -74.9 -80.2 -85.3 -90.4 -95.3 -100.2 -105.0 -109.6 -114.2 -118.7 -123.1 -127.5 -131.7 -135.9 -140.0 -144.0 NOTE:* The data includes bonding wires. n: number of wires n=1 (0.3mm length, 25µm Dia Au wire) n=1 (0.3mm length, 25µm Dia Au wire) Download S-Parameters, click here Source n=4 (0.3mm length, 25µm Dia Au wire) 3 FLC087XP GaAs FET & HEMT Chips CHIP OUTLINE 60 (Unit: µm) Drain 70 65 170 Gate Source Source 155 50 550 660±30 155 Source electrodes are electrically insulated from the bottom of the chip (PHS) Die Thickness: 60±20µm For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4 610±30 500