FLK027WG

FLK027WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 24.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK027WG is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 1.875 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 2.2 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Thermal Resistance CASE STYLE: WG Symbol IDSS gm Vp VGSO P1dB G1dB ηadd P1dB G1dB ηadd Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 65mA VDS = 5V, IDS = 5mA IGS = -5µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 14.5 GHz Min. -1.0 -5 23.0 6.0 Channel to Case Limit Typ. Max. 100 50 -2.0 24.0 7.0 32 24 8 34 40 150 -3.5 80 Unit mA mS V V dBm dB % dBm dB % °C/W VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 12 GHz G.C.P.: Gain Compression Point Edition 1.1 July 1999 1 FLK027WG X, Ku Band Power GaAs FET POWER DERATING CURVE 2 Total Power Dissipation (W) 100 Drain Current (mA) 75 50 25 VGS =0V -0.5V -1.0V -1.5V -2.0V 0 50 100 150 200 0 2 4 6 8 10 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 1 Case Temperature (°C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER f = 14.5GHz IDS ≈ 0.6 IDSS VDS=10V 24 VDS=8.5V P1dB & ηadd vs. VDS f = 14.5 GHz IDS ≈ 0.6 IDSS Output Power (dBm) 25 P1dB (dBm) 24 23 22 21 20 8 9 10 P1dB ηadd 22 20 18 16 14 Pout ηadd (%) 30 20 10 ηadd 40 20 7 9 11 13 15 17 Input Power (dBm) Drain-Source Voltage (V) 2 ηadd (%) 40 FLK027WG X, Ku Band Power GaAs FET +j50 +j25 +j100 S11 S22 +90° SCALE FOR |S12| 0.2 S21 S12 +j10 10 9 15 8GHz 14 16GHz 13 10 16GHz 15 12 11 10 9 11 12 13 25 14 50Ω 100 250 +j250 0.1 0 180° 16GHz 15 -j10 -j250 2 8GHz 15 9 14 8GHz 10 9 10 14 13 11 12 11 13 12 16GHz SCALE FOR |S21| 1 3 4 0° 8GHz -j25 -j50 -j100 -90° FREQUENCY (MHZ) 500 1000 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 14500 15000 15500 16000 S11 MAG .985 .965 .819 .804 .787 .766 .735 .689 .623 .534 .423 .290 .139 .036 .223 .395 .542 .652 .734 ANG -31.8 -60.1 165.4 159.8 155.0 150.1 144.2 137.4 128.7 118.5 106.5 93.9 82.0 -123.8 -131.8 -144.2 -155.7 -164.2 -170.9 S-PARAMETERS VDS = 10V, IDS = 60mA S21 S12 MAG ANG MAG ANG 4.381 3.965 1.204 1.177 1.161 1.164 1.197 1.248 1.309 1.364 1.407 1.413 1.380 1.304 1.190 1.041 .893 .757 .655 156.3 134.7 -8.3 -16.6 -24.5 -32.1 -40.4 -49.7 -60.3 -72.9 -86.4 -101.2 -116.8 -133.2 -149.4 -164.5 -177.4 172.1 163.3 .011 .021 .041 .043 .046 .049 .053 .058 .065 .072 .078 .082 .083 .080 .075 .068 .061 .054 .052 67.8 48.5 -54.3 -56.1 -58.6 -61.0 -63.6 -68.7 -74.0 -81.9 -90.5 -101.5 -112.3 -123.7 -136.1 -145.6 -152.8 -156.1 -160.8 S22 MAG .758 .748 .825 .832 .838 .842 .853 .864 .871 .878 .885 .886 .882 .875 .861 .849 .842 .832 .829 ANG -13.7 -27.2 -123.9 -130.0 -135.6 -140.2 -144.8 -149.6 -155.0 -161.4 -167.8 -174.6 178.7 173.0 169.2 167.8 167.4 167.6 167.3 Download S-Parameters, click here 3 FLK027WG X, Ku Band Power GaAs FET Case Style "WG" Metal-Ceramic Hermetic Package 2.8 (0.11) 1 2.5±0.15 (0.098) 1.0 Min. (0.039) 2-Ø1.6±0.01 (0.063) 0.1±0.05 (0.004) 2 3 8.5±0.2 (0.335) 1.0 Min. (0.039) 0.5 (0.020) 0.8±0.1 (0.031) 2.5 Max. (0.098) 6.1±0.1 (0.240) 1. 2. 3. 4. Gate Source Drain Source 0.6 0.03 Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4