FLK057WG

FLK057WG X, Ku Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 27.0dBm(Typ.) High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK057WG is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 3.75 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with gate resistance of 1000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Thermal Resistance CASE STYLE: WG Symbol IDSS gm Vp VGSO P1dB G1dB ηadd P1dB G1dB ηadd Rth Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS =125mA VDS = 5V, IDS =10mA IGS = -10µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 14.5 GHz Min. -1.0 -5 26.0 6.0 Channel to Case Limit Typ. Max. 200 100 -2.0 27.0 7.0 32 27 8 34 20 300 -3.5 40 Unit mA mS V V dBm dB % dBm dB % °C/W VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 12 GHz G.C.P.: Gain Compression Point Edition 1.2 August 1999 1 FLK057WG X, Ku Band Power GaAs FET POWER DERATING CURVE 4 Total Power Dissipation (W) 200 Drain Current (mA) 3 150 100 50 VGS =0V -0.5V -1.0V -1.5V -2.0V 0 50 100 150 200 0 2 4 6 8 10 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 2 1 Case Temperature (°C) Drain-Source Voltage (V) OUTPUT POWER vs. INPUT POWER f = 14.5GHz IDS ≈ 0.6 IDSS VDS=10V VDS=8.5V Pout P1dB & ηadd vs. VDS f = 14.5 GHz IDS ≈ 0.6 IDSS Output Power (dBm) 28 P1dB (dBm) 27 26 25 24 23 8 9 10 P1dB ηadd 27 25 23 21 19 ηadd (%) 30 20 10 ηadd 40 20 10 12 14 16 18 20 Input Power (dBm) Drain-Source Voltage (V) 2 ηadd (%) 40 FLK057WG X, Ku Band Power GaAs FET S11 S22 SCALE FOR |S12| +j100 +j50 +j25 16GHz 15 9 14 8 13 +90° .08 .06 .04 .02 .04 8 14 9 10 10 13 16GHz 11 12 13 14 12 9 11 .08 8 1.2 1.6 S21 S12 10 11 12 13 +j250 +j10 16GHz 0 12 10 10 9 25 50Ω 14 100 250 180° 15 0° 11 16GHz 15 8 SCALE FOR |S21| -j10 -j250 -j25 -j50 -j100 15 -90° FREQUENCY (MHZ) 500 1000 8000 9000 10000 11000 12000 13000 14000 15000 16000 S11 MAG .973 .941 .816 .787 .740 .642 .474 .249 .189 .480 .689 ANG -47.8 -85.1 148.5 139.7 129.3 112.7 86.4 43.8 -83.7 -140.8 -163.9 S-PARAMETERS VDS = 10V, IDS = 120mA S21 S12 MAG ANG MAG ANG 7.249 5.946 1.199 1.125 1.149 1.251 1.346 1.351 1.227 .980 .752 147.9 121.8 -21.6 -35.4 -49.4 -67.7 -91.6 -119.6 -150.6 -179.3 158.6 .016 .026 .033 .037 .045 .058 .075 .089 .095 .093 .092 60.6 38.1 -41.3 -40.9 -40.5 -46.2 -58.5 -75.4 -95.0 -112.5 -125.9 S22 MAG .545 .519 .745 .773 .796 .819 .845 .868 .878 .868 .840 ANG -20.3 -38.1 -149.2 -157.3 -163.0 -170.6 178.7 166.3 155.2 148.7 141.4 Download S-Parameters, click here 3 FLK057WG X, Ku Band Power GaAs FET Case Style "WG" Metal-Ceramic Hermetic Package 2.8 (0.11) 1 2.5±0.15 (0.098) 1.0 Min. (0.039) 2-Ø1.6±0.01 (0.063) 0.1±0.05 (0.004) 2 3 8.5±0.2 (0.335) 1.0 Min. (0.039) 0.5 (0.020) 0.8±0.1 (0.031) 2.5 Max. (0.098) 6.1±0.1 (0.240) 1. 2. 3. 4. Gate Source Drain Source 0.6 0.03 Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4