FLL120MK

FLL120MK L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 40.0dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 37.5 -65 to +175 175 Unit V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 26.8 and -5.8 mA respectively with gate resistance of 50Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Symbol IDSS gm Vp VGSO P1dB G1dB ηadd Rth Channel to Case VDS = 10V IDS = 0.55 IDSS (Typ.), f = 2.3GHz Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 2400mA VDS = 5V, IDS =240mA IGS = -240µA Min. -1.0 -5 39.5 9.0 Limit Typ. Max. 4000 6000 2000 -2.0 40.0 10.0 40 3.3 -3.5 4.0 Unit mA mS V V dBm dB % °C/W Power Gain at 1dB G.C.P. Power-added Efficiency Thermal Resistance CASE STYLE: MK G.C.P.: Gain Compression Point Edition 1.1 July 1999 1 FLL120MK L-Band Medium & High Power GaAs FET POWER DERATING CURVE 50 Total Power Dissipation (W) 40 30 20 10 4000 3000 2000 1000 VGS =0V -0.5V -1.0V -1.5V -2.0V 0 50 100 150 200 0 2 4 6 8 10 Case Temperature (°C) Drain-Source Voltage (V) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE OUTPUT POWER vs. INPUT POWER VDS=10V IDS ≈ 0.55 IDSS f = 2.3 GHz 42 Output Power (dBm) Pout 40 38 36 ηadd Drain Current (mA) 60 40 20 20 22 24 26 28 30 32 Input Power (dBm) 0 ηadd (%) 34 32 30 2 FLL120MK L-Band Medium & High Power GaAs FET +j50 +j100 +j25 4.5 4.0 5.0 GHz 5.0 GHz 4.5 4.0 3.5 3.0 3.0 2.5 2.0 2.0 0.5GHz10 1.0 0.5GHz S11 S22 +90° S21 S12 0.5 GHz +j10 3.5 +j250 0 25 50Ω 100 250 180° 4 3 2 5.0 GHz 1 4.5 4.0 1.5 4.5 4.0 3.0 2.0 5.0 GHz 1 0.5GHz SCALE FOR |S21| SCALE FOR |S12| 0° -j10 -j250 0.1 -j25 -j50 -j100 0.2 -90° FREQUENCY (MHZ) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 S11 MAG .959 .953 .953 .951 .939 .914 .885 .836 .766 .690 ANG -168.4 -176.0 -179.6 177.0 172.6 165.1 152.7 134.0 107.3 71.6 S-PARAMETERS VDS = 10V, IDS = 2200mA S21 S12 MAG ANG MAG ANG 3.136 1.617 1.170 .978 .927 .936 .990 1.106 1.239 1.415 95.8 94.1 93.8 92.3 91.4 88.0 80.6 67.1 48.2 23.9 .008 .010 .011 .014 .021 .024 .033 .051 .067 .103 31.0 45.7 64.3 82.4 89.1 93.2 94.6 88.1 77.3 60.5 S22 MAG .824 .813 .810 .792 .778 .739 .695 .633 .559 .477 ANG 179.4 178.8 177.7 176.5 174.0 168.3 158.9 145.1 128.0 107.3 Download S-Parameters, click here 3 FLL120MK L-Band Medium & High Power GaAs FET Case Style "MK" Metal-Ceramic Hermetic Package 2.5 Min. (0.098) 2-R 1.25 (0.049) 1 2 6.3±0.2 (0.25) 4.8 (0.188) 0.1 (0.004) 3 2.5 Min. (0.098) 1.0±0.1 (0.039) 17.5±0.2 (0.689) 8.9 (0.349) 2.28±0.2 (0.089) 14.3±0.2 (0.563) 4.5 Max. (0.177) 1.78 (0.073) 1. Gate 2. Source (Flange) 3. Drain Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4