FLL310IQ-3A

FLL310IQ-3A FEATURES ・ Push-Pull Configuration ・ High Power Output:30W ・ Excellent Linearity ・ Suitable for class A and class AB operation. ・ High PAE:40% DESCRIPTION The FLL310IQ-3A is a 30 Watt GaAs FET that employ a push-pull design which offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 2.5 to 2.7GHz. This new product is ideally suited for use in MMDS design requirements as it offers high gain, long term reliability and ease of use. High Voltage - High Power GaAs FET EUD stringent Quality Assurance Program assures the highest reliability and consistent performance. o ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25 C) Item Symbol Rating Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS PTot T stg T ch 15 -5 107 -65 to +175 175 o Unit V V W o C o C RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C) Item Symbol Condition Limit DC Input Voltage Forward Gate Current Reverse Gate Current Operating channel temperature VDS IGF IGR Tch o Unit V mA mA o RG=25 Ω RG=25 Ω 10 -17.4 145 C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C) Limit Item Symbol Condition Min. Typ. Max. Saturated Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Unit mA mS Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency 3rd Order Intermoduation Distortion Thermal Resistance Channel Temperature Rise Note2: Δ Tch=10V x IDSR x Rth IDSS gm Vp VGSO P1dB G1dB IDSR η add IM3 Rth Δ Tch VDS=5V,VGS=0V VDS=5V,IDS=7.2A VDS=5V,IDS=720mA IGS=-720uA V DS=10V f=2.7GHz IDS(DC)=7.0A Note1 f=2.7GHz, f=5MHz Δ 2-Tone test Pout=37.0dBm S.C.L. Channel to Case -1.0 -5.0 44.0 8.0 - 1200 6000 -2.0 45.0 9.0 7.0 40.0 -40.0 1.0 - 1600 -3.5 8 1.4 100.0 V V dBm dB A % dBc oC/W o C Note2 Note1: Tested in EUD Test Fixture containing external matching. CASE STYLE: IQ 2000 V~ ESD Class III Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k Ω) Edition 1.1 May 2005 1 FLL310IQ-3A High Voltage - High Power GaAs FET 2 FLL310IQ-3A High Voltage - High Power GaAs FET 3 FLL310IQ-3A High Voltage - High Power GaAs FET ■ Package Out Line PIN ASSIGMENT 1 : GATE 2 : GATE 3 : SOURCE 4 : DRAIN 5 : DRAIN 6 : SOURCE Unit:mm 4 FLL310IQ-3A High Voltage - High Power GaAs FET For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・ not put these products into the mouth. Do Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 ・ not alter the form of this product into a gas, powder, or liquid Do through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・ Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong Tel: +852-2377-0227 Fax: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) Tel +81-55-275-4411 Fax +81-55-275-9461 Sales Division 1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan Tel +81-45-853-8156 Fax +81-45-853-8170 5